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DRAFT – Work In Progress - NOT FOR PUBLICATION 12-13 April 2005 – ITRS Public Conference 2005 ITRS Public Conference PIDS ITWG Emerging Research Materials.

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Presentation on theme: "DRAFT – Work In Progress - NOT FOR PUBLICATION 12-13 April 2005 – ITRS Public Conference 2005 ITRS Public Conference PIDS ITWG Emerging Research Materials."— Presentation transcript:

1 DRAFT – Work In Progress - NOT FOR PUBLICATION April 2005 – ITRS Public Conference 2005 ITRS Public Conference PIDS ITWG Emerging Research Materials Munich, Germany April 13, 2005 Jim Hutchby – SRC Mike Garner – Intel

2 DRAFT – Work In Progress - NOT FOR PUBLICATION April 2005 – ITRS Public Conference ERM Participants Dimitri AntoniadisMIT Marc Baldo MIT Karl Berggren MIT Charles BlackIBM Dawn BonnellPenn. Univ. Alex BratkovskiHP George BourianoffIntel John CarruthersPort. St. Univ. Sang Wook Cheong Rutgers Univ Supriyo DattaPurdue Univ. Alex DemkovU. Texas Steve ErwinNRL M. Garner Intel, Chair Bruno GhyselenSOITECH Dan HerrSRC Susan HollIntel Jim HutchbySRC Berry JonkerNRL Gerhard KlemickPurdue Univ. Ted KaminsHP Richard KeihlU. Wisc. Phil KuekesHP Louis LomeIDA Cons. Mark LundstromPurdue Kathryn MolerStanford U. David Muller Cornell U. Ramamoorthy Ramesh UCB Mark ReedYale Univ. Rafael ReifMIT Dave Robert Air Products Morley StoneDARPA Sadasivan ShankarIntel Shinichi TagakiU of Tokyo Tom TheisIBM Jim TourRice Univ. Ruud TrompIBM JohnHenry ScottNIST Eric VogelNIST Victor ZhirnovSRC Igor ZuticNRL Kang WangUCLA Rainer WaserAacken U. Stan WilliamsHP In Kyeong YooSamsung

3 DRAFT – Work In Progress - NOT FOR PUBLICATION April 2005 – ITRS Public Conference ERM Workshops Critical Properties (MIT)Feb 15, 05 1D Charge State Materials*Feb. 4, 05 1D Charge State Models*Feb. 17, 05 Molecular State*Feb. 25, 05 Locally ordered solid state*Mar. 29, 05 Spin State Materials*Mar. 30, 05 * Teleconference

4 DRAFT – Work In Progress - NOT FOR PUBLICATION April 2005 – ITRS Public Conference Devices & Material Interplay DDS Gate Device Concept Determines Material Properties Material properties optimized for device Critical Properties = Properties for Device Operation Example: CNT DOS, Eg & m eff f(chirality & diameter) Critical Material Functional Properties Material Properties

5 DRAFT – Work In Progress - NOT FOR PUBLICATION April 2005 – ITRS Public Conference Strategic Thrust 1D charge state materials Molecular state materials Coupled dipole-spin state materials Self-assembly mechanisms Increased collaboration between synthesis, metrology and modeling –University, Govt, National Labs & Industry


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