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MRAM Roadmap Proposal v.1.0 2001. 4. 23. We propose two categories of FAST MRAM and HIGH DENSITY MRAM. · The 1st FAST MRAM introduction of 256Mb should.

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Presentation on theme: "MRAM Roadmap Proposal v.1.0 2001. 4. 23. We propose two categories of FAST MRAM and HIGH DENSITY MRAM. · The 1st FAST MRAM introduction of 256Mb should."— Presentation transcript:

1 MRAM Roadmap Proposal v.1.0 2001. 4. 23

2 We propose two categories of FAST MRAM and HIGH DENSITY MRAM. · The 1st FAST MRAM introduction of 256Mb should be pulled in 2003, while the 256Mb DRAM is near the end of life by its cost model. (chip size { "@context": "http://schema.org", "@type": "ImageObject", "contentUrl": "http://images.slideplayer.com/2/695247/slides/slide_2.jpg", "name": "We propose two categories of FAST MRAM and HIGH DENSITY MRAM.", "description": "· The 1st FAST MRAM introduction of 256Mb should be pulled in 2003, while the 256Mb DRAM is near the end of life by its cost model. (chip size

3 MRAM Roadmap 64G 16G 1G 4G 256M 2000 Density (Generation at Production) Year of Production 8G 512M 2G 32G 200220042014 2012 201020082006 High Density MRAM Fast MRAM DRAM 128G 128M 64M Fast MRAM High Density MRAM DRAM 1999 IBM-Infineon press release

4 MRAM Roadmap Fast MRAM High Density MRAM DRAM 500 250 70 130 30 2000 Feature Size (nm) Year of Production 180 50 100 350 200220042014 2012 201020082006 15 Technology Node - DRAM Half Pitch (nm) 500 250 70 130 30 180 50 100 350 15 Fast MRAM 2-Year Node Cycle Saturated to DRAM 3-Year Node Cycle DRAM 3-Year Node Cycle IBM-Infineon press release High Density MRAM 2-Year Node Cycle

5 Year of Production 10 0.1 Cell Area (um 2 ) 1 2000200220042014 2012 201020082006 0.01 MRAM Roadmap Fast MRAM High Density MRAM DRAM Fast MRAM DRAM High density MRAM 4F 2 6F 2 4F 2 8F 2 6F 2 4F 2

6 MRAM & DRAM Generations Year of Production Technology 1/2 Pitch(nm) Cell Area Factor Cell Area(um 2 ) 1/2 Pitch(nm) Cell Area Factor Cell Area(um 2 ) Fast MRAM High Density MRAM DRAM Density (Generation at Production) Density 2001 - 130 - 0.14 - - 8 - - 512M - - 2002 180 115 8 0.10 0.25 250 8 4 0.26 - 128M 256M 2003 150 100 8 0.08 0.19 220 8 4 0.18 1G 256M 512M 2004 130 90 8 0.065 0.13 180 8 4 0.14 - 512M 1G 2005 110 80 8 0.038 0.09 150 6 4 0.10 2G 1G 2G 2008 60 6 0.022 0.032 90 6 4 0.022 6G 16G 2011 40 4 0.0064 0.012 55* 4 4 0.0064 16G 128G 2014 30 4 0.0036 0.004 32* 4 4 0.0036 48G 2048G** 2006 90 70 8 0.029 0.068 130 6 4 0.065 - 2G 4G 2000 - 150 - 0.18 - - 8 - - - - - 1999 - 180 - 0.26 - - 8 - - 256M - - 2007 75 65 6 0.025 0.048 110 6 4 0.034 4G 8G 2009 50 6 0.015 0.026 80 6 4 0.015 8G 32G *65nm in 2010 *45nm in 2012 **1024 G in 2013


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