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STORAGE CORP. Michael E. Thomas CEO / Chairman / President Pocomoke City, Md. 1.

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Presentation on theme: "STORAGE CORP. Michael E. Thomas CEO / Chairman / President Pocomoke City, Md. 1."— Presentation transcript:

1 STORAGE CORP. Michael E. Thomas CEO / Chairman / President Pocomoke City, Md. fedrive@pacbell.net www.colossalstorage.net 1

2 2D Spintronic Data Storage Ferroelectric molecular write data activity is influenced by the introduction of ultra-violet / deep blue light, Einstein/Planck theorem of Energy Quantum. An induced electrical field helps to create spin polarized currents that further alters the ferroelectric molecular properties such as conductivity, magnetic fields and electrical properties. Removal of the light source and induced electric field leave the ferroelectric molecule in an alterable controlled electrical state potential which is non- volatile. 2

3 When electric field charge carriers are accelerated in disk rotation (as opposed to moving at constant velocity), a fluctuating magnetic field is produced. Generating a spin current by photon induced electric field poling in a high-k dielectric material like ferroelectrics can therefore be used to make reversible, non-dissipative, infinitely rewritable, high bandwidth non-volatile storage devices. 3

4 Reading data can be done by a second deep blue or ultra-violet light source which cause electrons of the ferroelectric perovskite molecule dipoles to jump from one orbit to another. Niels Bohr Atom Postulates states, light excited electrons will stay in their higher energy orbits, UV or deep blue light with specific resonate frequency and quantum energy excite the electrons of ferroelectric molecules into higher valence orbits and fall back to the normal lower energy orbits when the UV or deep blue light source is removed. 4

5 The electrostatic field (electric lines of force) from the ferroelectric molecule is sensed by a floating gate mosfet transistor. The read voltage output from the mosfet transistor is the recorded field strength in the ferroelectric molecule and is equal to the VCC of the floating mosfet transistor plus or minus the detected electrostatic field strength (electric lines of force) of the ferroelectric molecule. 5

6 The stored internal dipole position (remnant displacement of central atoms - remnant polarization) further amplifies any higher orbit electron electrical field potential either positive or negative depending on the dipole position in the ferroelectric molecule and the distance from the UV or deep blue integrated read/write head. 6

7 The dipole position of the central atom in one of two binary positions dictates whether the ferroelectric molecule, looking from the top down, is a positive polarity electric field or a negative polarity electric field with the magnetic fields perpendicular to current flow / electric field using the left hand rule. 7

8 A floating gate mosfet transistor is able to detect small changes in the electrical field potential of the ferroelectric molecule when ultra-violet or deep blue light source is focused on the ferroelectric perovskite molecule. The Mosfet transistor used for reading data is a source follower that does not destroy the stored electric field/voltage potential difference of the ferroelectric molecule. 8

9 The ferroelectric molecule can Store Independent Variable Analog Bit Cell Voltages from +/-.5v to +/- 6v peak to peak in random read write patterns for use in future audio and video markets. 1 Analog voltage bit cell can be made to represent 256, 512, 1024, etc. data bit values. 9

10 Removal of the second UV light source (Quantum energy is characterized lower - not to induce electron movement into the conduction band) leaves the ferroelectric molecule in its initial electrical field stored state. New definition of terms includes light induced positive electrical fields, normal non-induced electrical field, and light induced negative electrical fields. 10

11 The stored electrical field potential of a ferroelectric molecule can be made to represent, at least four electrostatic spintronic field states equal to binary information. Double sided disk and tape can be produced by separating the ferroelectric molecular coating layer by a plastic, metal, glass, or ceramic substrate. 11

12 1.2 Petabyte 2D Spintronic Data Storage 12

13 Modified Faraday Spintronics 13

14 3D Volume Holographic Optical Data Storage Holographic Storage uses new ways of non- volatile reading and writing having non destructive readout of information to/fm a 3.8 to 5 nanometer ferroelectric molecule called an atomic switch. A technique for changing matter at the molecular level will allow an integrated read/write head for ferroelectric optical media to change the internal geometry of the ferroelectric molecule. 14

15 The small size of ferroelectric transparent structures makes it possible to fabricate nano- optical devices like volume holographic storage. Both positive and negative index of refraction that will allow molecular particles of an atomic size to be modified, controlled, and changed to perform a specific function, desired task, used for low cost accurate optical data storage, and reprogrammed to accept new non-volatile data and eventually perform quantum entangled molecular functions. 15

16 A unique design concept for fabrication of a laser semiconductor component used for reading/writing data to an optical holographic disk drive storage product. The FE 3 D Holographic Optical Drive technology plans to push future storage densities of optical mass storage up to 40,000 Terabits/cu.cm. A comparison with 2 D Area magnetic hard drives of today is around at 60 gigabits.1 Optically assisted 2 D Area drives at 45 gigabits/sq.in. and 2 D Area contact recording AFM, STM, SPM or SFM, i.e. atomic force microscope and their derivatives, at about 300 gigabits/sq.in..414 11 IBM's magnetoresistive and giant magnetoresistive head technologies enable data storage products with the industry's highest areal densities. By Jim Belleson, IBM Storage Systems Division, & Ed Grochowski, IBM Almaden Research Center. 4 Ferroelectric domain reversal of a photorefractive crystal for bit-oriented three- dimensional optical memory, Masaki Hisaka, Kawata Lab, Department of Applied Physics, Graduate School of Osaka University.4 16

17 Molecular dissociation following Thomas' patents cover methods for a Non - Contact ultraviolet / blue laser photon induced electric field poling using UV at the same wavelength as a molecular transition will create controllable clouds of electrons in harmonic waves (plasmon). Some organic / inorganic molecules have resonant valence orbit electrons that under the proper Quantum UV/Blue photo excitation allow conduction band electrons to move freely for a short time. Plasmon known as electric current along with the electric field present provides a mechanism for ferroelectric perovskite molecules central atom to switch geometric positions. 17

18 The unique concept of resonant absorption excitation by UV/Blue light causing molecular dissociation and simultaneous electric field application ( Pockels effect ) can be used for writing 2D spintronics or 3D holographic volume data so when it is read back having intense 2D uniform polarized electrostatic / electromagnetic fields or 3D coherent interference waves in a beam of UV / Blue electro magnetic photon radiation. 18

19 The single frequency creates many bright or dark bands from the UV light that are in phase or out of phase with one another. The diffraction by the bistable state nucleus in the center of ferroelectric dipole molecule as well as the electrostatic field polarity can therefore be represented as a binary 0 or 1. 19

20 Ferroelectric non-linear photonic bandgap crystals offer the possibility of controlling and manipulating light within a UV / Deep Blue frequency. The small size of ferroelectric transparent structures makes it possible to fabricate nano-optical devices like Spintronic and Volume Holographic Storage having either positive and/or negative index of refraction. 20

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22 22Courtesy Yole Developpement Dr. Eric Mounier 2002

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24 24 University of Osnabruk Germany 2002

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26 THIS SCHEMATICS SHOWS THE PRINCIPLE OF FERROELECTRIC RAM. AN ION IN THE LATTICE IS PERMANENTLY POLARIZED IN EITHER THE 0 OR 1 POSITION FOR BINARY MEMORY. RAMTRON CORP. SCHEMATIC LEVEL DIAGRAM OF ULTRAVIOLET PHOTO REFRACTION EFFECTS. IN FERROELECTRIC MOLECULE LITHIUM NIOBATE. 26

27 27 GABOR DIFFRACTION EFFICIENCY OF A HOLOGRAPHIC GRATING IN A CRYSTAL OF LINBO3 DOPED WITH FE AND MN WAS MEASURED DURING RECORDING AND READOUT. ULTRAVIOLET ONLY IS A THOMAS CONCEPTUALIZED EXPECTATION NEEDING PROOF OF CONCEPT VERIFICATION.

28 28 University of Osnabruk Germany 2002

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30 UV Atomic Holographic Optical Storage Nanotechnology 400nm – 1 nm Blu-Ray Phase Change Disk Drives 405 nm Present Day Magnetic Hard Drives 1 mm to 25 30 The Electro Magnetic Spectrum InPhase Aprilis Maxoptic Drives 500 -650 nm

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33 33 Courtesy of Phonon Device Lab. (Cho Lab.) R.I.E.C. of TOHOKU UNIVERSITY

34 34 Courtesy of Phonon Device Lab. (Cho Lab.) R.I.E.C. of TOHOKU UNIVERSITY

35 35 * New Patented photonic nanostorage media - Ferroelectric Atomic Holographic Optical * New Patented nanointegrated semiconductor FE Read/Write Head * New Patented nanotechnology writing using UV/Blue Laser Diode and Electric Field Transducer * New Patented nanorecording technology reading using UV/Blue Diode or transistor or a CMOS FET * Same Infinite Read/Write operations to Disk/Tape/Card Drives * Almost Infinite Storage Life span of 100 years for the Media * Non Contact Recording * 3D Volume Atomic Holographic Storage having both positive and negative index of refraction. * Extremely Low Write and Read Currents * Extremely Fast Switch Subnanosecond State Change * 400,000 times faster Read and Write Data Transfer Rates using visual data * Extended Temperature Range * No Electrostatic Discharge Damage to Molecular Data Storage * No Altitude Requirements * Very Smooth Surface Morphology * Dense Packed Crystallis - < 50 Angstrom in Diameter over 40,000 Tbits/cu.cm. density * Same Non Destructive Read Out as Magnetic Media * Patented image data transfer capable of Bit for Bit erase / write / read holographic data storage * UV/Deep Blue NLO Ferroelectric Bandgap Material for reliability * Same Coating/Sputtering/MOCVD Processing for Making Magnetic Media * 8 cents per Gigabyte versus Hard Drives cost of $ 1.00 Gigabyte * 1 FeDisk = 20,000 DVD's or 4,000 Blu-Ray disks * Initial cost per gigabyte will equal or be greater than hard drives so Colossal can recapture R&D expenses * A 3.5 in. 10 Terabyte Fedisk will store 6,840 raw uncompressed TV Hours * No Power Requirements for Media - Non Volatile Media * Much higher sales margins for media, heads, and drive than magnetic/optical * Proprietary Holographic nanoTechnology and Techniques for disk, card, drum, and film a Worlds First * 2 Patents Granted PERIPHERAL STORAGE IMPROVEMENTS

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37 3D HOLOGRAPHIC / SPINTRONIC OPTICAL MEMORY VS LUCENT INPHASE HOLOGRAPHIC DRIVE 3 D Volume Atomic Drive3 D Volume Holographic Drive DRIVE COST $ 750 when in production$ 15,000 when in production DISK COST $ 45 – 90 mm 100 Terabytes$ 45 - 130 mm 300 Gigabytes DISK CAPACITY COMPARISON 1 FeDisk50 InPhase disks = 1 FeDisk MEDIA TYPE Ferroelectric PerovskitePlastic Ferroelectric Polymer (LiNbO3) RECORDING TYPE UV Photon QV Field PolingRed/Green Laser Spectral Hole Burning BIT DENSITIES/ sq. in. 400 Terabits and higher32 Gbits BIT PER CUBIC CENTIMETER > 40,000 Tbits/cu.cm. 32 Gbits/sq.cm. COATING PROCESS MOCVD/RF magnetron COST PER BYTE $.00005 Gigabyte$.50 Gigabyte SALES MARGIN PER Gigabyte $.00050 Gigabyte $ 0.03 Gigabyte GIGABYTE PARTICLE SIZE 5 nanometers 100 nanometers DATA TRANSFER RATE 10 Tera bit/sec and up 235 Mbits/sec write, 117 Mbits/sec read TEMPERATURE RANGE media to 350 f 165 f OF MEDIA HEAD TYPE Semiconductor laser SLM CMOS camera assembly MOS fet floating gate 100 mw green laser Optical transistor 52 mw blue laser RECORDING PHYSICS electrostatic NLO crystalplastic photopolymer BIT STORAGE PHYSICS 3D volume holographic 3D volume holographic Atomic / Molecular SwitchPhoto Ionization in Plastic COATING THICKNESS 10 to 100 mm 3 mm RANDOM WRITE/READ PATTERN Bit/Byte/WordSLM Page Silk-screened DIGITAL DATA PAGE 150,0003,000 SHRINKAGE 0.0 %.3 to.1 % due to plastic encapsulated READING METHOD Vertical InterferenceMultiplexed Layered Interference LASER TECHNOLOGY Solid StateSolid State WRITE FAILURE PERFORMANCE NoneData Overlap Problems MAXIMUM LAYER DENSITY > 1000 molecule layers9 layers MECHANICAL WRITE COMPONENT NoneMany Mechanical Shutters RANDOM READ SEEK TIMES 6 to 13 msSlow, no numbers published LENSES AND FILTERS 1 lens > 24 lenses/filters and 17 um mirrors TRACK ALIGNMENT Closed Loop Optical ServoServo marks and mechanical alignment SYMETRICAL WRITE / READ YESNO MARKET FOCUS Magnetic Drive MarketCD/DVD/Blu-Ray/HD-DVD PATENT INFRINGEMENT NONEYES, very likely with Colossal in near future. POSSIBLE 37

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42 Supporting Research Ferroelectric drive for data storage IBM Corporation using UVIBM Corporation using UV Switching of ferroelectric domains in lithium niobate crystals Dr. Manfred Mueller.Dr. Manfred Mueller Improving electrical properties of ferroelectric thin films by ultraviolet radiation, 2005 Center for Physical Electronics and Materials London, Saint Petersburg Electrotechnical University Russia. Improving electrical properties of ferroelectric thin films by ultraviolet radiation, 2005 Electric polarization induced by optical orientation of dipolar centers in non-polar piezoelectrics. Electric polarization induced by optical orientation of dipolar centers in non-polar piezoelectrics. A Ferroelectric Material Reveals Unexpected, Intriguing Behavior. Tiny Bubbles in PZT Ferroelectric Nanofilms Optical Parametric Amplification with Periodically Poled KTiOPO4, section 2.1 Nonlinear Polarisation Optical Parametric Amplification with Periodically Poled KTiOPO4, section 2.1 Nonlinear Polarisation The role of defects in light induced domain inversion in lithium niobate The role of defects in light induced domain inversion in lithium niobate Photoinduced electronic transport in K1-xLixTaO3 LIGHT-INDUCED POLARONIC ABSORPTION AT LOW TEMPERATURE IN PURE AND (Fe, Ce, Cr) DOPED SrxBa1- xNb2O6 OR Ba1-yCayTiO3 CRYSTALS AND PHOTODISSOCIATION OF VIS CENTERS INTO SMALL POLARONS LIGHT-INDUCED POLARONIC ABSORPTION AT LOW TEMPERATURE IN PURE AND (Fe, Ce, Cr) DOPED SrxBa1- xNb2O6 OR Ba1-yCayTiO3 CRYSTALS AND PHOTODISSOCIATION OF VIS CENTERS INTO SMALL POLARONS 42

43 Workshop of the Research Unit Light Confinement and Control with Structured Dielectrics and Metals { "@context": "http://schema.org", "@type": "ImageObject", "contentUrl": "http://images.slideplayer.com/2/688241/slides/slide_43.jpg", "name": "Workshop of the Research Unit Light Confinement and Control with Structured Dielectrics and Metals

44 Non-volatile holographic storage in doubly doped lithium niobate crystals Non-volatile holographic storage in doubly doped lithium niobate crystals Reversal of Ferroelectric Domains by Ultrashort Optical Pulses Nonvolatile two-color holographic recording in Tb-doped LiNbO3 Threshold effect for photorefractive light-induced scattering and signal beam amplification in doped LiNbO3 crystals Threshold effect for photorefractive light-induced scattering and signal beam amplification in doped LiNbO3 crystals Bistable Optical Information Storage Using Antiferroelectric-Phase Lead Lanthanum Zirconate Titanate Ceramics Bistable Optical Information Storage Using Antiferroelectric-Phase Lead Lanthanum Zirconate Titanate Ceramics Photoinduced hysteresis changes and charge trapping in BaTiO3 dielectrics Photoinduced hysteresis changes and charge trapping in BaTiO3 dielectrics Optical imaging and information storage in ion implanted ferroelectric ceramics Optical imaging and information storage in ion implanted ferroelectric ceramics Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage Photoferroelectric image storage in PLZT ceramics Longitudinal Electrooptic Effects and Photosensitivities of Lead Zirconate Titanate Thin Films Longitudinal Electrooptic Effects and Photosensitivities of Lead Zirconate Titanate Thin Films 44

45 Influence of ultraviolet illumination on the poling characteristics of lithium niobate crystals Influence of ultraviolet illumination on the poling characteristics of lithium niobate crystals Quasi-Phase Matched Nonlinear Optics Holographic scattering and its applications Asymmetry in fatigue and recovery in ferroelectric Pb Zr,Ti – O3 thin-film capacitors Asymmetry in fatigue and recovery in ferroelectric Pb Zr,Ti – O3 thin-film capacitors Light-induced absorption changes in ferroelectric crystals: SrxBa1- xNb2O6:Ce; KTaO3; KTa1-xNbxO3 Light-induced absorption changes in ferroelectric crystals: SrxBa1- xNb2O6:Ce; KTaO3; KTa1-xNbxO3 Backswitch poling in lithium niobate for high-fidelity domain patterning and efficient blue light generation Backswitch poling in lithium niobate for high-fidelity domain patterning and efficient blue light generation Impact of ultraviolet light on coercive field, poling dynamics and poling quality of various lithium niobate crystals from different sources Impact of ultraviolet light on coercive field, poling dynamics and poling quality of various lithium niobate crystals from different sources Photoinduced Photoinduced Domain Pinning and Domain Pinning and Hysteresis Hysteresis Changes Changes in Ferroelectric Thin Films by Scanning Force Microscopy in Ferroelectric Thin Films by Scanning Force Microscopy Photoinduced Photoinduced Domain Pinning and Domain Pinning and Hysteresis Hysteresis Changes Changes in Ferroelectric Thin Films by Scanning Force Microscopy in Ferroelectric Thin Films by Scanning Force Microscopy Visualization of ferroelectric domains with coherent light http://www.mri.psu.edu/conferences/ferro2005/Session%20V/4- Tenne.pdf Visualization of ferroelectric domains with coherent light http://www.mri.psu.edu/conferences/ferro2005/Session%20V/4- Tenne.pdf Ferroelectric BaTiO3/SrTiO3superlattices studied by ultraviolet Raman spectroscopy Ferroelectric BaTiO3/SrTiO3superlattices studied by ultraviolet Raman spectroscopy 45

46 Band-gap states and ferroelectric restoration in strontium bismuth tantalate Band-gap states and ferroelectric restoration in strontium bismuth tantalate Schottky barrier effects in the photocurrent of sol–gel derived lead zirconate titanate thin film capacitors Schottky barrier effects in the photocurrent of sol–gel derived lead zirconate titanate thin film capacitors Polarization-dependent electron affinity of LiNbO3 surfaces November 3, 2000, Directions in Information Technology, IBM Corp., Holographic Data Storage by J. Ashley, M.-P. Bernal, G. W. Burr, H. Coufal, H. Guenther, J. A. Hoffnagle, C. M. Jefferson, B. Marcus, R. M. Macfarlane, R. M. Shelby, and G. T. Sincerbox, click here.click here The Max Planck Institute and the Universities of Munich and Regensberg merits of semiconductor technology and the virtues of spin electronics and quantum computation. click hereclick here Caltech's Psaltis Group Holographic Storage Projects click here.click here Naval Postgraduate School Space Systems Academic Group Ferroelectricity Newsletter. A quarterly update on what's happening in the field of ferroelectricity click hereclick here Fundamental Size Limits in Ferroelectricity, Materials Department, University of California, Santa Barbara, Nicola A. Spaldin click hereclick here Studies on ferroelectric polarization open potential for tinier devices, U.S. Department of Energy's Argonne National Laboratory and Northern Illinois University click hereclick here 46


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