1. 반도체 기초 이론 Vol. I Semiconductor Fundamentals by R. F
반도체 기초 이론 Vol. I Semiconductor Fundamentals by R. F. Pierret Modular Series on Solid State Devices
서강대학교 기계공학과
최 범규

2. 반도체 재료 원소 III-V 화합물 II-VI 화합물 반도체 합금 Si, Ge GaAs, GaP, AlP, AlAs, etc.
ZnO, ZnS, ZnSe, CdS, etc. 합금
AlxGa1-xAs, GaAs1-xPx, etc.

3. 주기율표와 고체의 분류
주기율표
고체의 분류

4. Semiconductor Models
Schematic representation of an isolated Si atom

5. Semiconductor Models
The bonding model
Freeing of an electron

6. Energy Band Model
Conceptual development of the energy band model

7. Visualization of carriers
The electron
The hole

8. Material Classification

9. Manipulation of Carrier nos.-Doping(1)
Carrier numbers in intrinsic material
n = no. of electrons/cm3
p = no. of holes/cm3
Equilibrium condition
No external voltages, magnetic fields, stresses, or other perturbing forces
n = p = ni
ni = 1×1010/cm3 in Si at room temperature

10. Manipulation of Carrier nos.-Doping(2)
Common Si dopants. Arrows indicate the most widely employed dopants
Visulization of a donor and acceptor in the bonding model

11. Visualization of carriers in the energy band model
Donor
Acceptor

12. Density of States How many states at any given energy in the bands
gc(E)dE represents the no. of conduction band states/cm3 lying in the energy range between E and E+dE

13. The Fermi Function
The probability that an available state at an energy E will be occupied by an electron
EF = Fermi energy or Fermi level
k = Boltzmann constant (8.62E-5 eV/K)
T = temperature in Kelvin (K)

14. Distribution of Carriers
n type
p type

15. Carrier Concentrations
Formulas for n and p
Nondegenerate semiconductor

16. Carrier Concentration Calculations
Charge Neutrality Relationship
charge/cm3
Formulas for n and p

17. Special cases for semiconductors
Intrinsic semiconductor (NA= 0, ND= 0)
Doped semiconductor with
Doped semiconductor with
Compensated semicond.
Intrinsic-like material by making ND - NA = 0
When NA and ND are comparable & nonzero, the material is “compensated”.

18. Carrier Action The three primary action
drift: charged-particle motion in response to an applied electric field
diffusion: process whereby particles tend to spread out as a result of their difference of concentrations
recombination-generation:
Generation is a process whereby carriers are created.
Recombination is a process whereby carriers are destroyed.

19. Drift Current Hole drift current
vd: drift velocity
Hole mobility, mp, is the proportional constant between vd and e
Current density

20. Diffusion Currents Diffusion coefficients Total carrier currents
DP, DN are proportional constants
Total carrier currents
Visualization of diffusion
hole
electron

21. Recombination-generation
Indirect thermal R-G
bonding model
energy band model
Direct thermal R-G