1. Solid state Physics Measurements Xiaodong Cui Department of Physics The University of Hong Kong

2. Optical Characterization techniques:  Raman scattering spectroscopy  Photoluminescence spectroscopy  Rayleigh Scattering spectroscopy  Ultrafast spectroscopy (Kerr rotation, Absorption,..etc) Electric Characterization techniques:  I-V, dI/dV-V, C-V (4K-350K, ~1T)  Optical lithography (~1micron)

3. Reflectance spectroscopy 1.light source: laser (633nm&532nm)for raman experiment a tungsten lamp for the reflectance spectra experiment 2.a home-made con-focus microscopic system: light spot around 2microns 3.a spectrometer with three gratings(300,600,1200 l/mm) 4.a Charge-Coupled Device array(1024X512) detector to record the spectra

4. Ⅱ. Sample preparing By the standard optical lithography and wet etching procedures. we prepare slits (width 30 micron, length 1 mm) etched completely through the silicon substrate. Prepared by the chemical vapor deposition method. The isolated SWNTs are suspended crossing the slits, possible for measurement on single nanotube without the affection of the underlay of silicon. slits wafer catalyst side view

5. Reflectance spectra of single wall Carbon Nanotubes Hualing Zeng,et al, Nanotechnology, 19 (2008) 045708

6. Quantum Capacitance of single SWNT

10. Ultrafast Kerr Rotation spectroscopy – Determine the g factor of semiconductor