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ESYCOM 5 avril 2005 C. R. 1 EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552 COMMUNICATION SYSTEMS AND MEMS TEAM C. Rumelhard.

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Presentation on theme: "ESYCOM 5 avril 2005 C. R. 1 EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552 COMMUNICATION SYSTEMS AND MEMS TEAM C. Rumelhard."— Presentation transcript:

1 ESYCOM 5 avril 2005 C. R. 1 EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552 COMMUNICATION SYSTEMS AND MEMS TEAM C. Rumelhard

2 ESYCOM 5 avril 2005 C. R. 2 1 – Origin of ESYCOM 2 – Configuration of ESYCOM 3 – An example of item: Microwave Photonics 4 – Synthesis and prospects SUMMARY

3 ESYCOM 5 avril 2005 C. R. 3 1 – Origin of ESYCOM 1994: Master High Frequency Communication Systems, cooperation: UMLV, CNAM, ESIEE, INT Evry 1996: High Frequency Electronics Pole with CNAM, ESIEE, UMLV in Marne la Vallée Jan. 2000: Label for 2 years as Equipe daccueil by french Research Ministry under the name: Equipe Systèmes de Communication, ESYCOM Jan. 2002: new label for 2 years

4 ESYCOM 5 avril 2005 C. R. 4 in 2003: association with MEMS team of ESIEE => Equipe Systèmes de Communication et Microsystèmes, ESYCOM Jan. 2004: label for 2 years Oct. 2005: cooperation with french CNRS in a « Groupement dIntérêt Scientifique » Oct. 2005: label for 4 years ( ) 1 – Origin of ESYCOM

5 ESYCOM 5 avril 2005 C. R. 5 Electromagnetism and applications, UMLV, ESIEE Digital wireless communications, ESIEE Microsystems and microtechnologies, ESIEE, CNAM, UMLV Photonics and microwaves, CNAM, ESIEE, UMLV Research items High Frequency Measurements Antennas, Propagation and EMC, UMLV Characterisation of circuits and digital communication systems in microwaves and optics, ESIEE Photonics and microwave characterisation, CNAM MEMS technology, ESIEE 2 – Configuration of ESYCOM

6 ESYCOM 5 avril 2005 C. R Electromagnetism and applications UMLV, ESIEE - Numerical computations for electromagnetism - Antennas and networks - EMC, propagation and mastering of hertzian channel 2 – Digital Wireless Communications ESIEE - Transmitter/Receiver architectures - Signal and image coding 3 - Microsystems (MEMS) and technology ESIEE, CNAM, UMLV - Sensors, actuators and associated electronics - RF and optical MEMS 4 - Photonics and microwaves CNAM, ESIEE, UMLV - Microwave circuits and links in optics - Photonics and microwave components 2 – Configuration of ESYCOM Research items

7 ESYCOM 5 avril 2005 C. R. 7 4 research items 34 teachers-researchers 29 Ph D 5 technicians/engineers 15 Ph D passed since measurement equipments MEMS technology 2 – Configuration of ESYCOM

8 ESYCOM 5 avril 2005 C. R. 8 2 – Configuration of ESYCOM Teachers- researchersPh D Technic. Techno Technic. Engin. UMLV991 CNAM440,2 ESIEE21162,5 (8)1,2 ESYCOM34292,5 (8)2,4 Human resources

9 ESYCOM 5 avril 2005 C. R. 9 2 – Configuration of ESYCOM 29 Ph D: T1 : French research ministry funding T2 : Cifre funding T3 : R/D contracts T4 : Foreign affairs ministry, foreign government funding T5 : Institutions or industry funding T6 : Others T2 23% T1 37% T3 10% T4 13% T5 7% T6 10%

10 ESYCOM 5 avril 2005 C. R. 10 Main activities European network of excellence: Network of Excellence in broadband Fiber Radio Techniques and its Integration Technologies: NEFERTITI European network of excellence: Antenna Center of Excellence: ACE 3 french RNRT (National Research Network in Telecommunications) contracts 3 ANVAR contracts 1 CNES contract 1 CNRS contract 1 ACI –Ville contract etc… 2 – Configuration of ESYCOM

11 ESYCOM 5 avril 2005 C. R. 11 Main activities Organisation of Europan Microwave Week in Oct in Paris La Défense: 3 conferences, 11 workshops, 3 short courses, 1 exhibition 2000 registrations conf. and workshops, 1300 visitors of exhibition, 38 countries Organisation of 3 Summer Schools on RF and Microwave Systems - Sept. 2001: Architectures for RF systems (ESIEE) - Sept. 2002: Mastering of hertzian channel with several communication systems (UMLV) - March 2004: Advanced design of MMICs for millimeter waves, photonic and multifunction applications (CNAM) 2 – Configuration of ESYCOM

12 ESYCOM 5 avril 2005 C. R – Configuration of ESYCOM Item 1 Electroma- gnetism Item 2 Wireless communic. Item 3 Microsyst.- microtechno Item 4 Microwave photonics Total Scientific books Transactions Conferences Patents Ph D Publications

13 ESYCOM 5 avril 2005 C. R – An example of item: microwave photonics 3 professors, 2 lecturers, 4 passed Ph D, 5 Ph D, 5 Engineer diploma memoires Why microwave photonic links? Signal distribution in phased array antennas : commercial satellites or military planes. A few metres. Radio over fiber. Few km for microwaves over optics and a few tens of meters for hertzian microwave link Optical distribution of a signal in very high bit rate electronic systems. A few m or a few tens of m.

14 ESYCOM 5 avril 2005 C. R. 14

15 ESYCOM 5 avril 2005 C. R. 15

16 ESYCOM 5 avril 2005 C. R. 16 Enjeux des systèmes de Défense Les technologies Optoélectronique et Hyperfréquence doivent être intimement liées pour jouer un rôle stratégique dans les systèmes futurs Antennes conformes multifonctions distribuées Choix de systèmes reconfigurables à antennes actives conformes distribuées multi-faisceaux & multifonctions (antenne partagée: R/GE/Coms)

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18 ESYCOM 5 avril 2005 C. R. 18 Near future: high bit rate optical connections 5 à 10 years: Chip to chip communications 2 à 5 years: Card to card communications

19 ESYCOM 5 avril 2005 C. R. 19 Establishment of a library of models to simulate a complete microwave photonic link with a non linear frequency domain simulator ( ADS). Many simulations in gain, noise and non linearities of microwave photonic links (3 CNAM memoires + part of a thesis) ESYCOM + Thales Airborne Systems 3 – An example of item: microwave photonics Circuits for microwave photonic links

20 ESYCOM 5 avril 2005 C. R. 20 Microwave optical links laser ampli driver Optical fiber photo-détector Low noise ampli RF = 1,55 ou 1,3 ou 0,8 µm Intensity Modulation Direct Detection Direct modulation laser ampli driver Optical fibre photo-détector Low noise ampli RF = 1,55 ou 1,3 ou 0,8 µm D modulator MZ ou EA I M external modulation

21 ESYCOM 5 avril 2005 C. R. 21 Laser diode50 km Optical Fibre Photodiode biasing current : 22 mA modulation current: 0.1 mA frequency: GHz Optical link

22 ESYCOM 5 avril 2005 C. R. 22 Laser diodeOptical fibre Photodiode Laser output Optical link

23 ESYCOM 5 avril 2005 C. R. 23 Laser diodeOptical Fibre (50 km) Photodiode optical fibre output Optical link

24 ESYCOM 5 avril 2005 C. R. 24 Laser diodeOptical fibre (50 km) Photodiode Photo-current: Optical link

25 ESYCOM 5 avril 2005 C. R. 25 Laser diodeOptical fibre (50 km) Photodiode Output on 50 : Optical link

26 ESYCOM 5 avril 2005 C. R. 26 Opto amplifier at 30 GHz with InP/GaInAs heterojunction phototransistors (HPT) (Ph D) Design: ESYCOM with our HPT models Technology: OPTO+ Marcoussis Measurements: LEST Brest 3 – An example of item: microwave photonics Circuits for microwave photonic links

27 ESYCOM 5 avril 2005 C. R. 27 R0R0 C1 L1 Vce Cd Vbe 4 C2 L2 Vce 3 Vbe 3 Cd Rd T51030 PV4E /4 Vbe 1 Cd C3 L3 Vce 1 Vbe 2 Cd Rd Optique modulée Microondes 30 GHz Opto amplificateur à 30 GHz en technologie TBH InP OPTO+

28 ESYCOM 5 avril 2005 C. R. 28 Broad band distributed preamplifier 0,2 to 20 GHz for photodiode (CNAM memoire) Design: ESYCOM + Ferdinand Braun Institut für Höchstfrequenztechnik Berlin Technology: UMS Orsay-Ulm Measurements: ESYCOM 3 – An example of item: microwave photonics Circuits for microwave photonic links

29 ESYCOM 5 avril 2005 C. R. 29 Modulator (up converter) at 30 GHz (Ph D + patent) Design: ESYCOM Technology HFET: UMS Orsay-Ulm Measurement: ESYCOM 3 – An example of item: microwave photonics Circuits for microwave photonic links

30 ESYCOM 5 avril 2005 C. R. 30 Frequency tripler 12,66-38 GHz (Ph D) Design: ESYCOM HFET technology : OMMIC Limeil Brévanne Measurements: ESYCOM + Agilent Palo Alto Chipset for transmitter and receiver of UWB signals (3,6-10,7 GHz) (Ph D) Design: ESYCOM Technology: UMS Orsay-Ulm Measurements: ESYCOM + ENSTA Paris 3 – An example of item: microwave photonics Circuits for microwave photonic links

31 ESYCOM 5 avril 2005 C. R. 31 Monocycle wavelet generator Generation of monocycle pulses with differential pairs of transistors

32 ESYCOM 5 avril 2005 C. R. 32 Monocycle generator: input and output signals Rectangular signal applied at the input of the pulse generator Series of generated monocycle pulses

33 ESYCOM 5 avril 2005 C. R. 33 Microwave photonic components InP/GaInAs heterojunction phototransistor (HPT) (Ph D) Numerical and physical simulations of semiconductor devices in finite differences : ESYCOM Measuremens: OPTO+ Marcoussis, LEST Brest, ESYCOM New concepts (optoelectronic S parameters) for optoelectronic modelling of a HPT: ESYCOM 3 – An example of item: microwave photonics

34 ESYCOM 5 avril 2005 C. R. 34 Description of InP/GaInAs HPTs InP/GaInAs HPT realized by OPTO + C. Gonzalez, HBT Phototransistor as an Optical Millimeter wave Converter - Part I: the Device, part 5.3 of a book entitled: Microwave Photonics: From Components to Applications and Systems, Edited by Vilcot, Cabon, Chazelas, Kluwer Academic Publishers, The Netherlands, in print – to be published in 2003 Base Collector InPSub-Collector Emitter p-InGaAs n- n-InP Optical beam Base Collector InPSub-Collector Emitter p-InGaAs n- n-InP Base Collector InPSub-Collector Emitter p-InGaAs n- n-InP Optical beam Window in the base

35 ESYCOM 5 avril 2005 C. R. 35

36 ESYCOM 5 avril 2005 C. R. 36 Simulation physique (différences finies 2D) de PTH InP/GaInAs optique modulée

37 ESYCOM 5 avril 2005 C. R. 37 HPT large signal model E C B P opt P OUT E Ict RCRC RERE C Rb1 Rb2 B I cni X.Cj C I CC Cj E I E ni I EC (1-X).Cj C.Vopt I AV IcN IbN Vopt - modulated light - microwave response - noise - thermal behaviour

38 ESYCOM 5 avril 2005 C. R. 38 Si/SiGe phototransistor (Ph D) Physical simulation and design: ESYCOM Technology: Atmel Heilbronn through Université of Ulm Microwave measurements : IEF Orsay Optoelectronic measurements: ESYCOM First world result for a Si/SiGe HPT Comparison with other teams in the world (Germany, France, Israel, Taïwan, USA) in a workshop organised by ESYCOM in Budapest in Sept in association with an IEEE Topical Meeting on Microwave Photonics For a Si/SiGe HPT, a team of the University of Taïwan began with a MQW structure and recently switched to our solution. Microwave photonic components 3 – An example of item: microwave photonics

39 ESYCOM 5 avril 2005 C. R. 39 Description of Si/SiGe HPTs Designed by ESYCOM and Ulm University, realized by Atmel Heilbronn J.L. Polleux, F. Moutier, A.L. Billabert, C. Rumelhard, E. Sönmez, H. Schumacher, A Strained SiGe layer Heterojunction Bipolar Phototransistor for Short-Range Opto-Microwave Applications, IEEE International Topical Meeting on Microwave Photonics, MWP2003, Budapest, Hungary, Sept Base Emitter n-Si Collector SiSub-Collector p-SiGe n-Si Emitter Ge % Optical beam Base Emitter n-Si Collector SiSub-Collector p-SiGe n-Si Emitter Ge % Base Emitter n-Si Collector SiSub-Collector p-SiGe n-Si Emitter Base Emitter n-Si Collector SiSub-Collector p-SiGe n-Si Emitter Ge % Optical beam Window in the emitter

40 ESYCOM 5 avril 2005 C. R. 40 Description Si/SiGe HPTs Designed by ESYCOM and Ulm University, realized by Atmel Heilbronn Absorption of light in base + a small part of emitter and collector (SiGe) but also in emitter and collector (Si) Base Emitter n-Si Collector Si Sub-Collector p-SiGe n-Si Emitter Ge % Optical beam N ++ – cm -3 30nm: P + – cm -3 SiGe, 22% Si 20nm 10nm 100nm: N – cm nm: N – cm -3

41 ESYCOM 5 avril 2005 C. R. 41

42 ESYCOM 5 avril 2005 C. R. 42 Improving the frequency response of Si/SiGe PTH by a focalisation of optical absorption in the base by optimisation of optical wavelength (Ph D) Physical simulations : ESYCOM Future technology : Atmel Heilbronn through University of Ulm Microwave photonic components 3 – An example of item: microwave photonics

43 ESYCOM 5 avril 2005 C. R. 43 Amélioration de la fréquence de coupure optique F TOPT dun PTH en néclairant que la base F TOP T

44 ESYCOM 5 avril 2005 C. R. 44 Amélioration de la fréquence de coupure optique F TOPT dun PTH en fonction de la longueur donde optique

45 ESYCOM 5 avril 2005 C. R. 45 Improving the responsivity of a Si/SiGe by insertion in a horizontal optical cavity constituted of adjustable Bragg reflectors (Ph D) Optimisation of the number of blades of the Bragg reflector to improve absorption: ESYCOM MEMS Si technology for Bragg reflectors: ESYCOM Microwave photonic components 3 – An example of item: microwave photonics

46 ESYCOM 5 avril 2005 C. R. 46 Bragg reflector Si/air SiO2/airSi/Ge Si/airSi Lateral cavity system Vertical Bragg reflectors, DRIE on Si substrate Structure realized in ESYCOM/ESIEE Lateral cavity with insertion of a photodiode Lateral cavity with insertion of a SiGe phototransistor

47 ESYCOM 5 avril 2005 C. R Structure 3: 1st refl. 3b, 2nd refl. 13 is interesting Si slab thickness ( µ m) st refl 1b. 2 b. 3 b. 4 b. 5 b. 6 b Slab thickness (µm) Max. Absorption Lateral cavity system: optimal structures The maximum absorption of each structure

48 ESYCOM 5 avril 2005 C. R – An example of item: microwave photonics Microwave photonic components Study of a phase shifter constituted of two coupled optical cavities realized with Bragg reflectors (Ph D) Design of adjustable micro-photonic circuit: ESYCOM + IEF Orsay Future realization with a MEMS technology on Si: ESYCOM

49 ESYCOM 5 avril 2005 C. R. 49 Variable phase shifter with a double Braggreflector double cavity Technology MEMS ESYCOM W rib Light in Light out Substrat : S i SiO2SiO2 Coupled double cavity

50 ESYCOM 5 avril 2005 C. R. 50 CAVITY PHASE SHIFTER WITH BRAGG REFLECTORS Application: Mach Zehnder modulator in micro-photonic circuit

51 ESYCOM 5 avril 2005 C. R. 51 y z x Double cavité à réseau de Bragg Vue 3D de la double cavité ( Vue plan yz) H1 x W h n1n1 n0n0 y n2n2 10 m x Vue en coupe de la double cavité ( Vue plan yx) Vue en coupe de double cavité ( Vue plan yz) SiO2SiO2 Substrat : Si i y Air d cav H h z VIEW OF THE STRUCTURE

52 ESYCOM 5 avril 2005 C. R – Synthesis and prospects Microwave photonic item: First realization of a Si/SiGe microwave HPT Necessity to have an access to different technologies: Atmel Ulm, OPTO+ Marcoussis, OMMIC Limeil Brévanne, UMS Orsay-Ulm Direct acces to ESIEE MEMS Si technology for micro-photonic circuits Measurements realized in Brest, Orsay, Marne la Vallée and Paris ESYCOM: Many contacts with other items of ESYCOM Also contacts with other microwave photonics teams in Paris (Paris VI)


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