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1 Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS Welcome.

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Presentation on theme: "1 Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS Welcome."— Presentation transcript:

1 1 Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS Welcome

2 2 CL CS Direction Pôles Organisation TEAM II MINASROSA SINCMOCOSY OLCTSF RIA RSTMOGISAMACDISCOISIMISM2DNANOPHOTOMINCMOST - 75 researchers, 80 PhD, 19 Post docs ISGE

3 3 Devices and systems Information Communication Biology, Chemistry, Physics Modeling Design Characterization Technological processes Power management MINAS

4 4 Integration Devices and functions Systems Modeling design Technology, materials and process Characterisation, reliability Multi scale nano, micro, macro 3D, heterogeneous, Research strategy

5 5 Moore law CMOS + passives MEMS RF Sensors actuators MOEMS Lab on chip Integrated circuits Size reduction Magnetic Dielectric Silicon membrane BCB technology Hetero structures for laser emission Photonic crystal on silicon Materials for detection and actuation (Piézo…) Nano technology Microfluidic 3D Packaging New functionalities Goals Functional Integration

6 6 MIS M2D NANOPHOTO MINC ISGE Strategic axis ( ) Integrated systems for power management Micro and nano systems for biology Micro and nano systems for communications Micro and nano systems design MOST

7 7 Brest Besançon Limoges Orléans Rouen Caen Troyes Tours Clermont- Ferrand Dijon Avignon Belfort Poitiers Vannes Le Mans Amiens Ile de France Grenoble Toulouse Rennes Brest Lille Nancy Lyon Saint- Etienne Lannion Montpellier Nantes Marseille Angers LAAS: Communication power management, biology/chemistry Technological platform Besançon + Characterisation platform

8 8 etching and cleaning Plating benches DRIE STS (4), RIE ICP TRIKON (1 III-V, 1 Si, SiO2, Si3N4; 1 for Metals, polymers Plasma O2 TEPLA Furnaces: MOS oxidation, MEMS Oxidation, Diffusion, III-V AlOx process 3 EDWARDS stations, 2 ALCATEL sputtering, 1 VARIAN (MEMS, R D), 1 VEECO Metallisation Clean room facilities

9 9 HEIDELBERG DWL200 : 5 to 20cm masks, 0.7µm resolution, direct writing on wafers Photolithography: manual area Photolithography:Automatic area III-V Molecular Beam Epitaxy (2 x 32 RIBER) E-beam writer: RAITH 150 (>20nm) EATON ion implanter Clean room facilities

10 10 Electrical characterization Characterisation platform I (V) Tests: Max 10A ou 1kV AFM Physical characterization UV Photoluminescence RF characterisation Optical characterisation Noise measurement 5 IT, 480 m 2 750m 2 new building


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