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Sub-nanometer Scale Atomic Bonding Characterization via HAADF STEM

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Presentation on theme: "Sub-nanometer Scale Atomic Bonding Characterization via HAADF STEM"— Presentation transcript:

1 Sub-nanometer Scale Atomic Bonding Characterization via HAADF STEM
Yu Shi Materials Science and Engineering

2 Old Question about Structural Ceramics
Substance Material Product Application Intrinsic brittleness of β-Si3N4 Rare earth oxides  elongated grains  reinforced toughness Why? Zhu et al. Sci. Technol. Adv. Mater. 9, (2008)

3 Electron Microscopy Ernest Ruska Nobel Prize in Physics 1986
"for his fundamental work in electron optics, and for the design of the first electron microscope" Source: Wikipedia.org, FEI.com, nobelprize.org

4 New-generation TEM STEM Scanning transmission electron microscopy
HAADF High-angle annular dark field EELS Electron-energy-loss Spectroscopy Z-contrast imaging Chemical Analysis Cs-corrected Atomic resolving power ~1Å Simultaneous EELS Electronic structure and bonding Scan coil Electron beam Specimen Z-contrast STEM EELS Browning et al. Nature 366, 143 (1993)

5 Preferential segregation in silicon nitride
Amorphous intergranular film (IGF) La (Z = 57) segregates in IGF Maximum intensity at IGF/grain interface Partially occupied of Si terminating positions Shibata et al. Nature 428, 730 (2004)

6 Preferential segregation in silicon nitride
Position of La identified (vaguely…) Longer La-N bonding length than Si-N Theoretical calculation shows eV higher bonding energy of La-N Shibata et al. Nature 428, 730 (2004)

7 Further study: range of rare earth atoms
La: no periodic atomic sites associated Sm: A and B sites occupied Er: atom pairs (1.48 ± 0.04 Å) Yb: atom pairs (1.46 ± 0.05 Å) Lu: atom pairs (1.43 ± 0.07 Å) Ziegler et al. Science 306, 1768 (2004)

8 Further study: bonding characteristics
Sm N45: A = B  same bonding Si L23: A ≠ B  A: O-Si-N B: Si-N Ziegler et al. Science 306, 1768 (2004)

9 Conclusion Preferential segregation of rare earth atoms results in the suppression of grain growth in diametrical direction and the enhancement of growth in c-axis. Depending on the atom size, electronic configuration, and the presence of oxygen at the interface, rare-earth atom bonds to different locations. Reference: Shibata et al. Nature 428, 730 (2004) Ziegler et al. Science 306, 1768 (2004)

10 Thank you! Q & A Yu Shi


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