Presentation is loading. Please wait.

Presentation is loading. Please wait.

Silicon Pixel and Strip Detectors for LHC Experiments 1 st Coordination Meeting of the CBM Experiment at the future GSI facility GSI, Nov. 15-16, 2002.

Published by Modified over 9 years ago

Similar presentations

Presentation on theme: "Silicon Pixel and Strip Detectors for LHC Experiments 1 st Coordination Meeting of the CBM Experiment at the future GSI facility GSI, Nov. 15-16, 2002."— Presentation transcript:

1 Silicon Pixel and Strip Detectors for LHC Experiments 1 st Coordination Meeting of the CBM Experiment at the future GSI facility GSI, Nov. 15-16, 2002 P. Riedler ALICE Silicon Pixel Team CERN

2 GSI - 15/11/2002P.Riedler - CERN2 Acknowledgements: M. Campbell, P. Collins, H. Dijkstra, F. Faccio, H. Pernegger, G. Stefanini and the ALICE SPD Team

3 GSI - 15/11/2002P.Riedler - CERN3 GSI - 15/11/2002P.Riedler - CERN3 ALICE Silicon Pixel Telescope Reconstructed event: Testbeam 2002 - The LHC and its experiments Outline - Radiation damage in silicon - Electronics - Detectors - A closer look at the ALICE SPD

4 GSI - 15/11/2002P.Riedler - CERN4

5 GSI - 15/11/2002P.Riedler - CERN5 head-on collisions of protons (7TeV on 7 TeV) and heavy ions L max ~10 34 cm -2 s -1  (4cm)~3 10 15 (neq) cm -2 in 10 years (>85% charged hadrons) ! RADIATION DAMAGE ! The LHC and its Experiments  Detectors for LHC under full construction now Installation: 2006, First Beam: 2007 => RD groups (e.g. RD48, now RD50) already work on solutions for next generation of detectors

6 GSI - 15/11/2002P.Riedler - CERN6

7 GSI - 15/11/2002P.Riedler - CERN7 2 general purpose detectors: Higgs in SM and in MSSM, supersymmetric Particles, B physics (CP violation,...),… ATLAS CMS Strips: 61m 2, 6.3 x 10 6 channels Pixels: ~2m 2, 80 x 10 6 channels 210m 2, 9.6 x 10 6 channels ~2m 2, 33 x 10 6 channels

8 GSI - 15/11/2002P.Riedler - CERN8 CP violation and rare decaysHeavy ion physics ALICELHCb Strips: 4.9m 2, 2.6 x 10 6 channels Drifts: 1.3m 2, 1.33 x 10 5 channels Pixels: 0.2m 2, 9.83 x 10 6 channels VELO: 0.32m 2, 2 x 10 5 channels Tracker: 14m 2, ~8 x 10 5 channels HPD: ~ 0.02m 2, ~1 x 10 6 channels

9 GSI - 15/11/2002P.Riedler - CERN9 Silicon Strip Detectors Al strip amplifier SiO 2 /Si 3 N 4 + Vbias + + + + - - - n bulk p+p+ n+n+ Each strip is connected to one readout channel N-in-n detectors Double sided detectors Floating intermediate strips … Silicon Pixel Detectors Chip Detector 2-dim matrix of cells Each cell is connected to its own processing electronics high granularity

10 GSI - 15/11/2002P.Riedler - CERN10 Radiation Damage in Silicon Surface DamageBulk Damage e.g. ATLAS Pixel Detector Electronics Sensitive components are located close to the surface Detectors Full bulk is sensitive to passing charged particles

11 GSI - 15/11/2002P.Riedler - CERN11 Electronics Cumulative Effects Single Event Effects (SEE) Total Ionizing Dose (TID) Ionisation in the SiO2 and SiO2- Si interface creating fixed charges (all devices can be affected) Displacement Defects (bipolar devices, opto- components) Permanent (e.g. single event gate rupture SEGR) Static (e.g. single event upset SEU) Transient SEEs In the following the effects of TID only will be discussed :

12 GSI - 15/11/2002P.Riedler - CERN12 Total Ionizing Dose Ionization due to charged hadrons, , electrons,… in the SiO 2 layer and SiO 2 -Si interface Fixed positive oxide charge Accumulation of electrons at the interface Additional interface states are created at the SiO 2 -Si border R. Wunstorf, PhD thesis 1992

13 GSI - 15/11/2002P.Riedler - CERN13 E.g.: transistor level leakage and threshold voltage shift Parasitic channel between source and drain F. Faccio, ELEC2002 Threshold voltage shift, transconductance and noise degradation, source drain leakage, leakage between devices Effects of TID in CMOS devices

14 GSI - 15/11/2002P.Riedler - CERN14 Radiation Levels in some LHC experiments total dosefluence 1MeV n eq. [cm -2 ] after 10 years ATLAS Pixels50 Mrad1.5 x 10 15 ATLAS Strips7.9 Mrad~2 x 10 14 CMS Pixels~24Mrad~6 x 10 14 * CMS Strips7.5Mrad1.6 x 10 14 ALICE Pixel500krad~2 x 10 13 LHCb VELO- 1.3 x 10 14 /year** *Set as limit, inner layer reaches this value after ~2 years **inner part of detector (inhomogeneous irradiation ) A radiation tolerant design is important to ensure the functionality of the read out over the full life-time!

15 GSI - 15/11/2002P.Riedler - CERN15 Solution - Technology Hardening D A C B Flatband-voltage shift as function of the oxide thickness After N.S. Saks, M.G. Ancona, and J.A. Modolo, IEEE Trans.Nucl.Sci., Vol. NS-31 (1984) 1249 Tunneling of trapped charge in thin oxides  V T ~ 1/t ox 2 for t ox > 10nm  V T ~ 1/t ox 3 for t ox < 10nm

16 GSI - 15/11/2002P.Riedler - CERN16 Using a 0.25µm CMOS process reduces th-shift significantly

17 GSI - 15/11/2002P.Riedler - CERN17 Enclosed geometrie to avoid leakage Gate SD Standard Geometry Leakage path S D Gate Enclosed Geometry Enclosed gate (S-D leakage) Guard ring (leakage between devices)

18 GSI - 15/11/2002P.Riedler - CERN18 F. Faccio, ELEC2002

19 GSI - 15/11/2002P.Riedler - CERN19 Front end technology choices of the different experiments TechnologyChip ALICE Pixel0.25µm CMOSALICE1 ALICE Strips0.25µm CMOSHAL25 ALICE Drift0.25µm CMOSPASCAL ATLAS StripsDMILLABCD ATLAS PixelDMILL->0.25µm CMOSFE-D25 CMS PixelDMILL->0.25µm CMOSPSI CMS Strips0.25µm CMOSAPV25 LHCb VELODMILL/0.25µm CMOSSCTA/Beetle LHCb Tracker0.25µm CMOSBeetle Deep sub-µm means also: speed, low power, low yield, high cost

20 GSI - 15/11/2002P.Riedler - CERN20 Radiation Damage in Detectors Surface Damage Creation of positive charges in the oxide and additional interface states. Electron accumulation layer. Bulk Damage Displacement of an Si atom and creation of a vacancy and interstitial Point like defects ( , electrons) Cluster Defects (hadrons, ions)

21 GSI - 15/11/2002P.Riedler - CERN21 Macroscopic Effects Bulk Damage Increase of leakage current Increase of depletion voltage Charge trapping Surface Damage Increase of interstrip capacitance (strips!) Pin-holes (strips!) Effects signal, noise, stability (thermal run-away!) Annealing effects will not be discussed here. But: Do not neglect these effects, esp. for long term running! All experiments have set up annealing scenarios to simulate the damage after 10 years.

22 GSI - 15/11/2002P.Riedler - CERN22 Leakage current M. Moll - Vertex 2002 Linear increase of leakage current with fluence:  I vol =  ne (  =4-6 x 10 -17 A/cm) But: I prop. Exp(-E g /2kT) Cooling will help! e.g: ATLAS Strips: -7°C CMS Pixel: -8°C P. Riedler Phd-thesis ATLAS Strip detector

23 GSI - 15/11/2002P.Riedler - CERN23 Depletion Voltage Type-Inversion: n-type bulk starts to behave like p-type bulk -> depletion from the backside of the diode! V dep increases with fluence (after inversion) M. Moll - Vertex 2002 V Before Inversion depletion V After Inversion p+p+ n+n+ If depletion voltage has increased too so much that underdepleted operation is necessary-> charge loss and charge spread!

24 GSI - 15/11/2002P.Riedler - CERN24 Possible Solutions 1. n-in-n detectors Underdepleted operation is possible! ATLAS pixel CMS pixel LHCb VELO (special case) Fluences close to 10 15 cm -2 At LHC: Efficiency n-in-np-in-n ATLAS NIM A 450 (2000) 297 ATLAS V bias

25 GSI - 15/11/2002P.Riedler - CERN25 2. Oxygenated Silicon Defect engineering (RD48) - to reduce reverse annealing => Lower depletion voltage can be expected after several years sunning (including warm-up times) But: improvement only for charged hadrons and . No effect for neutrons observed. Also: spread of depletion voltage of detectors from different suppliers can reduce the beneficial effect ATLAS pixel uses oxygenated Si

26 GSI - 15/11/2002P.Riedler - CERN26 Further solutions to allow a reasonable operating voltages even after high fluences and annealing: Low resistive silicon Thin detectors (also intersting for material budget reasons) CZ starting material (under investigation) to reduce interstrip capacitance Choice of LHC experiments: ALICEpixelp-in-nstandard FZ ATLAS pixeln-in-noxygenated ATLAS stripsp-in-nstandard FZ CMS pixeln-in-nstandard FZ CMS stripsp-in-nstandard FZ LHCb VELOn-in-nstandard FZ

27 GSI - 15/11/2002P.Riedler - CERN27 A closer look at the ALICE Silicon Pixel Detector (SPD)  z= 28.3 cm r= 3.9 cm & 7.6 cm 2 barrel layers INFN Padova

28 GSI - 15/11/2002P.Riedler - CERN28 Sector - Carbon Fibre Support The two barrels will be built of 10 sectors, each equipped with 6 staves: stave INFN Padova Material budget(each layer)≈ 0.9% X 0 (Si ≈ 0.37, cooling ≈ 0.3, bus 0.17, support ≈ 0.1) (lowest material budget of all pixel detectors!)

29 GSI - 15/11/2002P.Riedler - CERN29 Bus ALICE1LHCb chip Carbon-fibre sector Cooling tube MCM Grounding foil Silicon sensor Each Stave is built of two HALF-STAVES, read out on the two sides of the barrel, respectively. Ladder: 5 chips+1 sensor 193 mm long

30 GSI - 15/11/2002P.Riedler - CERN30 Bus: 7 layer Al-Kapton flex Wire bonds to the ALICE1LHCb chip 240µm 200µm goal:150µm M.Morel

31 GSI - 15/11/2002P.Riedler - CERN31 Analog Pilot: Reference bias ADC (T, V and I monitor) Multi Chip Module (MCM) ALICE1LHCb chip Data out Clock JTAG AP DP GOL Digital Pilot: Timing, Control and Readout Laser and pin diode

32 GSI - 15/11/2002P.Riedler - CERN32 Mixed signal (analogue, digital) Produced in a commercial 0.25µm CMOS process Radiation tolerant design (enclosed gates, guard rings) 8192 pixel cells 50 µm x 425 µm pixel cell ~100 µW/channel ALICE1LHCb chip 13.5 mm 15.8 mm

33 GSI - 15/11/2002P.Riedler - CERN33 Low minimum threshold: ~1000 electrons Low individual pixel noise:~100 electrons

34 GSI - 15/11/2002P.Riedler - CERN34 Class I: 42-75% Class II: 6-12% Class III: 17-42% (sample: 4 wafer, 750µm) Production testing will start this autumn Class I - Mean Threshold Fully developed test system for wafers:

35 GSI - 15/11/2002P.Riedler - CERN35 Ladders and Assemblies Chip Detector Detectors: single chip detectors 5 chip detectors for ladders p-in-n 300 µm thick(tests) - final thickness: 200µm Chips: single chips 750 µm thick (tests) - 150µm final Bump-bonding: VTT/Finland Pb-Sn solder bumps AMS/Italy In bumps

36 GSI - 15/11/2002P.Riedler - CERN36 chip0chip1chip2chip3chip4 First testbeam with full size ladder - July 2002

37 GSI - 15/11/2002P.Riedler - CERN37 Detector Chips

38 GSI - 15/11/2002P.Riedler - CERN38

39 GSI - 15/11/2002P.Riedler - CERN39 Chip 33Chip 43Chip 50Chip 53Chip 63 Sr-source measurement of thin ladder (300µm chip, 200µm detector) Missing Pixels% missing% working 63280.3499.66 53210.2699.74 50440.5399.47 4330.0499.96 33610.7499.26 matrices

40 GSI - 15/11/2002P.Riedler - CERN40 Summary All LHC experiments use silicon detectors to improve their tracking capabilities (up to >200m 2 !). Installation foreseen in 2006. The high radiation environment demands radiation tolerant technologies for front end chips and detectors. Almost all silicon detectors use 0.25µm CMOS chips (future?). P-in-n and n-in-n detectors are used depending on the expected fluences and the annealing damage. The current challenges are the actual construction and integration of the detectors.

Download ppt "Silicon Pixel and Strip Detectors for LHC Experiments 1 st Coordination Meeting of the CBM Experiment at the future GSI facility GSI, Nov. 15-16, 2002."

Similar presentations

Radiation damage in silicon sensors

Radiation damage in silicon sensors
10/09/2002IWoRID; Niels van Bakel1 A collaboration between the ASIC-lab Heidelberg, NIKHEF Amsterdam and the University of Oxford Beetle; a front-end chip.

10/09/2002IWoRID; Niels van Bakel1 A collaboration between the ASIC-lab Heidelberg, NIKHEF Amsterdam and the University of Oxford Beetle; a front-end chip.
Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.

Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.
The ATLAS Pixel Detector

The ATLAS Pixel Detector
Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug. 23-24, 2006,

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,
128 September, 2005 Silicon Sensor for the CMS Tracker The Silicon Sensors for the Inner Tracker of CMS CMS Tracker and it‘s Silicon Strip Sensors Radiation.

128 September, 2005 Silicon Sensor for the CMS Tracker The Silicon Sensors for the Inner Tracker of CMS CMS Tracker and it‘s Silicon Strip Sensors Radiation.
LHC SPS PS. 46 m 22 m A Toroidal LHC ApparatuS - ATLAS As large as the CERN main bulding.

LHC SPS PS. 46 m 22 m A Toroidal LHC ApparatuS - ATLAS As large as the CERN main bulding.
Department of Physics VERTEX 2002 – Hawaii, 3-7 Nov. 2002 Outline: Introduction ISE simulation of non-irradiated and irradiated devices Non-homogeneous.

Department of Physics VERTEX 2002 – Hawaii, 3-7 Nov Outline: Introduction ISE simulation of non-irradiated and irradiated devices Non-homogeneous.
The Alice Inner Tracking System

The Alice Inner Tracking System
LHC Experiments at Liverpool E2V Visit – Nov 2005 Introduction Si Technology Upgrade/Maintenance Summary.

LHC Experiments at Liverpool E2V Visit – Nov 2005 Introduction Si Technology Upgrade/Maintenance Summary.
For high fluence, good S/N ratio thanks to: Single strip leakage current I leak  95nA at T  -5C Interstrip capacitance  3pF SVX4 chip 10 modules fully.

For high fluence, good S/N ratio thanks to: Single strip leakage current I leak  95nA at T  -5C Interstrip capacitance  3pF SVX4 chip 10 modules fully.
The LHCb Inner Tracker 2007-03 Marc-Olivier Bettler SPS annual meeting Zürich 21 February 2007.

The LHCb Inner Tracker Marc-Olivier Bettler SPS annual meeting Zürich 21 February 2007.
ATLAS SCT module performance: beam test results José E. García.

ATLAS SCT module performance: beam test results José E. García.
16/11/01GS/ALICE SPD/LHCC Referees1 ALICE Silicon Pixel Detector (SPD) G. Stefanini/CERN-EP General Front-end electronics – pixel bus – ALICE1 ASIC – PILOT.

16/11/01GS/ALICE SPD/LHCC Referees1 ALICE Silicon Pixel Detector (SPD) G. Stefanini/CERN-EP General Front-end electronics – pixel bus – ALICE1 ASIC – PILOT.
1 Integrating Radiation Monitoring System for the ATLAS Detector at the Large Hadron Collider Igor Mandić 1, Vladimir Cindro 1, Gregor Kramberger 1 and.

1 Integrating Radiation Monitoring System for the ATLAS Detector at the Large Hadron Collider Igor Mandić 1, Vladimir Cindro 1, Gregor Kramberger 1 and.
Si Pixel Tracking Detectors Introduction Sensor Readout Chip Mechanical Issues Performance -Diamond.

Si Pixel Tracking Detectors Introduction Sensor Readout Chip Mechanical Issues Performance -Diamond.
Jornadas LIP, Dez. 2005 P. Martins - CFTP-IST The NA60 Silicon Vertex Telescopes Dimuon measurements Dimuon measurements Vertex telescope used in: Vertex.

Jornadas LIP, Dez P. Martins - CFTP-IST The NA60 Silicon Vertex Telescopes Dimuon measurements Dimuon measurements Vertex telescope used in: Vertex.
X-ray radiation damage of silicon strip detectors AGH University of Science and Technology Faculty of Physics and Applied Computer Science, Kraków, Poland.

X-ray radiation damage of silicon strip detectors AGH University of Science and Technology Faculty of Physics and Applied Computer Science, Kraków, Poland.
11 th RD50 Workshop, CERN 12-14 Nov. 2007 1 Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.

11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.
Online Radiation Dose Measurement System for ATLAS experiment I. Mandić a, representing ATLAS collaboration a Jožef Stefan Institute, Jamova 39, Ljubljana,

Online Radiation Dose Measurement System for ATLAS experiment I. Mandić a, representing ATLAS collaboration a Jožef Stefan Institute, Jamova 39, Ljubljana,

Similar presentations

Ads by Google