1. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Power MOSFETs 2013.01.15 SD Lab. SOGANG Univ. Doohyung Cho

2. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Contents 6.6 Power VD-MOSFET On-Resistance 6.6.1 Source Contact Resistance 6.6.2 Source Region Resistance 6.6.3 Channel Resistance 6.6.4 Accumulation Resistance 6.6.5 JFET Resistance 6.6.6 Drift Region Resistance 6.6.7 N+ Substrate Resistance 6.6.8 Drain Contact Resistance 6.6.9 Total On-Resistance Simulation Example 6.7 Power VD-MOSFET Cell Optimization 6.7.1 Optimization of Gate Electrode Width 6.7.2 Impact of Breakdown Voltage 6.7.3 Impact of Design Rules 6.7.4 Impact of Cell Topology

3. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6 Power VD-MOSFET On-Resistance W Cell : pitch for the linear cell geometry W G : width of the gate electrode W PW : width of the polysilicon window W C : width of the contact window to the N+ source and Pbase regions W S : width of the photoresist mask used during the N+ source ion implantation

4. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.1 Source Contact Resistance Size of the window in the polysilicon must be minimized to obtain the lowest possible specific on-resistance contact resistance (ρC) W Cell : 20um W G : 10um W PW : 10um W C : 8um W S : 4um Source contact = 2um Amplified by a factor of 5times. W Cell : 15um W G : 10um W PW : 5um W C : 4um W S : 3um Source contact = 1um Amplified by a factor of 7.5times. Increased Source contact resistance

5. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.2 Source Region Resistance Entering the N+ source region from the contact, the current must flow along the source region until it reaches the channel. The resistance contributed by the source region is determined by the sheet resistance of the N+ diffusion (ρSQN+) and its length (LN+)

6. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.3 Channel Resistance Channel length is defined by the difference in the depth of the P-base and N+ source junctions W Cell : 20um Gate bias of 10 V Channel length is 1 μm Gate oxide thickness is 500 Å 0.92 mΩ cm2 Channel resistance can be reduced by decreasing the gate oxide thickness but this is accompanied by a proportionate increase in the input capacitance, which can slow down the switching speed of the power MOSFET structure.

7. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.4 Accumulation Resistance Threshold voltage in this expression is for the on-set of formation of the accumulation layer The accumulation layer resistance can be reduced by decreasing the gate width However, this increases the JFET and drift region resistances

8. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.5 JFET Resistance If the JFET region is assumed to extend to the bottom the P-base junction, the resistance of the JFET region can be obtained The JFET region resistance can be reduced by increasing the gate width (WG). however, this increases the channel and accumulation layer resistances.

9. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.6 Drift Region Resistance Model AModel B The drift region resistance can be reduced by increasing the gate width (WG). However, this increases the channel and accumulation layer resistances. Model B predicts a smaller value for the drift region resistance when compared with model A with the 45° distribution angle due to greater current spreading in the drift region.

10. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.6 Drift Region Resistance The resistance of the drift region is now determined by two portions: a first portion with a cross-sectional area that increases with the depth and a second portion with a uniform cross-sectional area for the current flow Model C

11. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.7 N+ Substrate Resistance & 6.6.8 Drain Contact Resistance N+ Substrate Resistance Substrate wafer thickness : 500um typical phosphorus-doped silicon wafer is 0.003 Ω cm specific resistance contributed by this wafer is 0.15 mΩ cm2. Drain Contact Resistance Before entering the drain electrode, the current flows through the contact resistance between the drain metal and the N+ substrate resistance is not amplified unlike in the case of the source contact.

12. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.6.9 Total On-Resistance

13. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Simulation Example N-Drift Thickness : 3um (concentration : 1.3x10e16 cm-3) P-base Thickness : 3um N+source thickness : 1um JFET : 1x10e16 cm-3 (depth : 3um)

14. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Simulation Example Additional JFET doping : 2.1x10e16cm-3 Channel length of 1.6um P-base doping : 1.5x10e17cm-3 Gate oxide Thickness : 50nm Vth : 3.5V The depletion layer width (W0) in the JFET region is 0.24 μm constant with a width (a/2) of 3.4 μm. From the JFET region width of 3.4 μm current spreads to a width of 6.5 μm at a depth of 6 μm current travels a distance of 3 μm

15. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.7 Power VD-MOSFET Cell Opimization It was demonstrated that the JFET and drift region specific resistance contributions can be reduced by increasing the width of the gate electrode. Unfortunately, the specific resistance contributions from the channel and accumulation regions increase when the gate width is increased. Consequently, it is necessary to optimize the width (WG) of the gate electrode to obtain the lowest possible specific on-resistance

16. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.7.1 Optimization of Gate Electrode Width analytical model predicts a minimum in the total specific on-resistance for a gate electrode width of 9.5 μm with a value of 1.54 mΩ cm2 All the major components of the internal resistance within the power VDMOSFET structure are dependent on the cell pitch. drastic increase in the JFET and drift region contributions at gate electrode widths of less than 6 μm minimum specific on-resistance occurs at a gate width of 9.5 μm.

17. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.7.2 Impact of Breakdown Voltage it can be seen that the minimum specific on-resistance increases and the optimum gate electrode width shifts to a larger value when the blocking voltage is increased channel resistance becomes dominant in the low voltage power VD-MOSFET structure

18. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.7.3 Impact of Design Rules desirable to reduce the size of the poly silicon window to improve the current distribution within the drift region In addition, a reduction of the polysilicon window decreases the cell pitch smaller design rules require investment in photolithographic technology with higher resolution N+source contact large =>poor contact of P-bacs => drastically diminish the dynamic performance of the device due to creation of an open-base N–P–N transistor specific onresistance is reduced from 1.54 to 1.36 to 1.21 mΩ cm2 as the polysilicon window is reduced from 8 to 6 to 4 μm.

19. SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. 6.7.4 Impact of Cell Topology