METDA Corporation Shijiazhuang, Hebei Province, China
General Briefing Headquarter Research Center 34.3 h ㎡
General Briefing New Development Zone Industrial Production Base 66.6 h ㎡
METDA Overview METDA is the International Marketing/Sales company of HSRI. The Holding Company-Hebei Semiconductor Research Institute (HSRI) of Micro Electronic Technology Development Application Corporation (METDA Corp.) was founded in 1956 with achievements of China’s first Transistor, first Silicon IC, first GaAs IC and first Semiconductor Laser. METDA has been serving our customers in wireless, fiber optics, aerospace, avionics, medical and satellite communication industries with high- performance, cost competitive and high reliable products. METDA is structured by 9 Specialized Divisions, 7 Research Departments, 5 Pilot Production Lines, 2 Research and Development Centers, 8 High-Tech Self-invested Corporations and Joint Ventures including several star companies like Bowei and Puxing. Overseas sales of METDA in 2013 is USD 26 million
Application Areas Radar Satellite Communications Aerospace Communication station Optical Communications Public Security
Product Offering GaAs and GaN MMIC & devices Silicon devices RF& Microwave Hybrid Integrated Circuits Microwave& Millimeter wave components, modules and subsystems Optoelectronic devices and modules MEMS devices and modules Packaging Solutions
GaAs Devices and MMIC The GaAs and GaN Division has won more than 100 National Technology Awards Main categories include GaAs/GaN MMIC Power Amplifier Chip, GaAs Power FET, GaAs MMIC Low Noise Amplifier Chip and GaAs Low Noise FET. Also includes T/R module solutions. Products are widely served in wireless communication and radar markets. Customized products can be offered
GaAs Products Range GaAs MMIC Power Amplifiers Digital Phase Shifters Digital Attenuators Switches Limiters Digital True time Delay Power divider/ combination Multi-Functinal Chip Low Noise Amplifiers FET Low Noise FETs Power FETs Internally Matched FETs
(1)LNA f ： 1-40GHz (2) Power Amplifier f ： 1-40GHz Pout ： 20-42dBm (3)Digital Phase Shifter f ： 1-40GHz RMS ： 2.5° Bits ： 1 、 4 、 5 、 6 、 8 (4) Digital Attenuator f ： 1-40GHz (5) Switch f ： DC-40GHz PIN and FET (6) Limiter f ： 2-6G 、 6-18G ； C 、 X Limiting Level ： 15dBm Max Power ： 43dBm(CW) GaAs Microwave& mm wave MMIC GaAs MMIC
T/R Chipset Series ： 5.2-5.8GHz GaAs MMIC 2-6GHz GaAs MMIC 8.5-10.5GHz GaAs MMIC 8-12GHz GaAs MMIC 6-18GHz GaAs MMIC 15-18GHz GaAs MMIC … 34-36GHz GaAs MMIC 16 categories from L to Ka Band Every T/R Chipset contains ： Limiter LNA Switch Digital Attenuator Digital Phase Shifter Driving Amplifier Power Amplifier Driver GaAs T/R Chipset
GaN Products Range Capability of simulation for Epitaxial Material strucutre, device structure, circuit design of GaN power devices/MMIC within 100 GHz. High accurate GaN device model is built matched to the processing platform which forms the model store for GaN Active, Passive device. Already shifted from 3 inches to 4 inches at 2nd Quarter of 2014.
2.7-3.5GHz 50W/25dB/45% 2-18GHz 3W/7dB/15% 6-18GHz 10W/16dB/20% 8.0-12 GHz 50W/23dB/40% 16-18GHz 30W/20dB/35% 34-36GHz 13W/14dB/20% GaN Power MMIC Product Series 90-96GHz 0.5W/8dB/10%
0.9-2GHz 100W/11dB/45% 1.14-1.24GHz 65W/15dB/60% 2.7-3.5 GHz 150W/12dB/45% 5-6GHz 100W/8dB/40% 9-10GHz 130W/7dB/36% 1.8-2.3GHz 30W/13dB/60% 4.4-5GHz 120W/10dB/45% 6.4-7.2GHz 120W/12dB/55% GaN Power Transistor Series Products
LNA 3mm MMIC Product SPST SwitchBalance Mixer RF/LO frequency ： 86-100GHz IF frequency ： DC-4GHz InP Processing SPDT Switch 90-96GHz Insertion Loss 1.8dB VSWR 2.0:1 Isolation 30dB Speed 5ns 90-96GHz I/O VSWR2.0/2.5 Gain 18dB P-1 ： 2dBm Noise Figure 4.5dB 90-96GHz Insertion Loss 2.5dB VSWR 2.0:1 Isolation 25dB Speed 5ns
Silicon devices The Silicon Research and Development facility of HSRI provides different ranges of Silicon Transistors and Hybrid Integrated Circuit. Microwave Power Transistors include Continuous-wave Transistors, Linear Power Transistors, Power Pulsed Transistors and LDMOS Power Transistors. The facility has also built an advanced 4″1um production line for customization offering. Products are widely served in Solid State Array Radars, Microwave Communications and Telemetry areas; low noise chips and low power LDMOS chips are widely served in TV receiving systems while optic- diodes are used in security systems of airports and stations.
RF& Microwave Hybrid Integrated Circuits The Mini-Packaged Microwave/RF circuit centre of HSRI has developed into the largest Microwave/RF circuit supplier in China. Main categories include Crystal Oscillator, Surface mount RF/Microwave cost-effective components and High Reliable RF/Microwave components. Customized sub-system& integrated assemblies can be offered. Products are widely served in communication system, such as PHS, GSM, GSM-edge, CDMA and WCDMA&WLNA system. Moreover, those high reliable components are well equipped in aerospace& avionics industries with frequency range up to 40 GHz.
Filters Oscillators RF/Microwave Amplifiers VCO and Integrated PLS RF/Microwave Mini Integrated Circuit RF& Microwave Hybrid Integrated Circuits
Frequency ranges from P band to X band, power ranges from 10W to 1500W, carrier and metal package can be selected. Typical P band Parameter Typical X band Parameter Frequency ： 100~400MHz Frequency ： 8.5~10.5GHz Insertion Loss ： 0.3dB Insertion Loss ： 0.7dB Isolation ： 50dB Isolation ： 30dB Peak Power ： 1500W Peak Power ： 20W (10%Duty Cycle ， Pulse width 0.1ms) (40% Duty Cycle ， Pulse width 6ms) New Update: TR Power Switches RF& Microwave Hybrid Integrated Circuits
1st Generation Silicon Filter VS. Traditional Cavity Filter Vertical Hole MEMS Filter (2-50GHz) With vertical hole of silicon cavity structure, we achieved the 2nd generation MEMS Filter by decreasing the dimension to 1/3, and increasing the rejection from 60dB to 80dB. RF& Microwave Hybrid Integrated Circuits 1st Generation Silicon Filter VS. 2nd Generation Silicon Filter
Microwave& Millimeter-wave components, modules and subsystems The Microwave& Millimeter-wave Division has been providing high reliable Microwave and Millimeter-wave modules and subsystems to the market since 1960s. The division offers Microwave and Millimeter-wave T/R Modules, Power Modules and subsystem, single/multi channel T/R subsystem, Control Circuits and Frequency Source subsystem. Products are widely served in Radar and Satellite market.
30mm×30mm×8mm ， 15g Gain ： >30dB Psat ： >39dBm Power Fluctuation ： <±0.3dB P.A.E ： >25% C band Chip T/R module 20×20×6mm Frequency ： 8.6GHz-9.6GHz ； Power Output ： 2 W ； Rx Gain ： 23dB ； Rx Noise Figure ： 4dB ； Microwave& Millimeter-wave components, modules and subsystems X band Chip T/R module
6-18 GHz wideband Minimized T/R module Frequency ： 6GHz~18GHz Tx Power Output ： 4W Rx Gain ： 23dB Rx Noise Figure ： 5dB 80mm×50mm×7.4mm 34-36GHz 8 Channels T/R Module 40mm×35mm×4.3mm Tx Power Output ： 26dBm Rx Gain ： 16dB Rx Noise Figure ： 4.2dB Microwave& Millimeter-wave components, modules and subsystems
Frequency ： 8 ～ 12GHz ； Psat ： ≥10W (CW) ； Tx Efficiency ： ≥20% ； Max Input Power ： ≥10W ； 80×30×8mm3 Microwave& Millimeter-wave components, modules and subsystems X band Minimized Chip T/R module
Optoelectronic devices and modules The research and development center of Optoelectronic division engages in the opto-semiconductor technologies and the commercialization of solid state lighting solutions, across both visible and non-visible spectrums. Core products include High Power Semiconductor Laser Arrays, Pulse Laser Arrays, High Power LED and AlGaAs/GaAs Quantum Well Infrared Photodetector ( QWIP ). Products have been widely served in fiber optics, navigation, telemetry, avionics, guidance, identification and lighting industries.
MEMS devices and modules The MEMS division is one of the earliest and largest MEMS Industrial Research Centers in China. Products include Micro Inertial Devices, Microsensors, RF MEMS Devices and Opto-MEMS Devices Products are applicable in satellite, aircraft, attitude control of carborne and radar antenna, navigation and guidance markets.
MSG Series Gyroscope MSA Series Accelerometer MPA Series Accelerometer MVS Series Vibration Sensor MFS Series Air Flow Sensor SiMF Series MEMS Filter MOA Series Optical Attenuator MGM Series Gas Meter …… MEMS Accelerometer MEMS Filter MEMS Gyroscope Air Flow Sensor MEMS devices and modules
MEMS Accelerators MEMS AcceleratorHigh g Accelerator Sensor MEMS devices and modules
Packaging Solutions The Packaging Division has been providing components and custom integrated packaging solutions for more than 40 years. It is awarded as ‘National Industrial Experimental Base of High-Density Packaging for Large Scale Integrated Circuit’. The division has developed Microwave devices packages, High-Density packages, Micro packages, Optoelectronic devices packages and MEMS packages. A Multilayer Ceramic Package Development & Production Line has been built, and equipped with fully automatic Multilayer Ceramic Package production facility and advanced electronic packaging design system.