Presentation on theme: "Shijiazhuang, Hebei Province , China"— Presentation transcript:
1Shijiazhuang, Hebei Province , China METDA CorporationShijiazhuang, Hebei Province , China
2Headquarter Research Center 34.3 h㎡ General BriefingHeadquarter Research Center 34.3 h㎡
3Industrial Production Base 66.6 h㎡ General BriefingNew Development ZoneIndustrial Production Base 66.6 h㎡
4METDA OverviewMETDA is the International Marketing/Sales company of HSRI. The Holding Company-Hebei Semiconductor Research Institute (HSRI) of Micro Electronic Technology Development Application Corporation (METDA Corp.) was founded in 1956 with achievements of China’s first Transistor, first Silicon IC, first GaAs IC and first Semiconductor Laser.METDA has been serving our customers in wireless, fiber optics, aerospace, avionics, medical and satellite communication industries with high-performance, cost competitive and high reliable products.METDA is structured by 9 Specialized Divisions, 7 Research Departments, 5 Pilot Production Lines, 2 Research and Development Centers, 8 High-Tech Self-invested Corporations and Joint Ventures including several star companies like Bowei and Puxing.Overseas sales of METDA in 2013 is USD 26 million
5Application Areas Radar Satellite Communications Aerospace Communication stationOptical CommunicationsPublic Security
6Product Offering GaAs and GaN MMIC & devices Silicon devices RF& Microwave Hybrid Integrated CircuitsMicrowave& Millimeter wave components, modules and subsystemsOptoelectronic devices and modulesMEMS devices and modulesPackaging Solutions
7GaAs Devices and MMICThe GaAs and GaN Division has won more than 100 National Technology AwardsMain categories include GaAs/GaN MMIC Power Amplifier Chip, GaAs Power FET, GaAs MMIC Low Noise Amplifier Chip and GaAs Low Noise FET. Also includes T/R module solutions.Products are widely served in wireless communication and radar markets. Customized products can be offered
8GaAs Products Range GaAs MMIC FET Power Amplifiers Low Noise FETs Digital Phase ShiftersDigital AttenuatorsSwitchesLimitersDigital True time DelayPower divider/ combinationMulti-Functinal ChipLow Noise AmplifiersFETLow Noise FETsPower FETsInternally Matched FETs
9GaAs Microwave& mm wave MMIC GaAs MMICGaAs Microwave& mm wave MMIC(1)LNAf：1-40GHz(4) Digital Attenuatorf：1-40GHz(2) Power Amplifierf：1-40GHzPout：20-42dBm(5) Switchf：DC-40GHzPIN and FET(3)Digital Phase Shifterf：1-40GHzRMS：2.5°Bits：1、4、5、6、8(6) Limiterf：2-6G、6-18G；C、XLimiting Level：15dBmMax Power：43dBm(CW)
15GaAs T/R Chipset T/R Chipset Series： 5.2-5.8GHz GaAs MMIC …34-36GHz GaAs MMIC16 categories from L to Ka BandEvery T/R Chipset contains：LimiterLNASwitchDigital AttenuatorDigital Phase ShifterDriving AmplifierPower AmplifierDriver
16GaN Products RangeCapability of simulation for Epitaxial Material strucutre, device structure, circuit design of GaN power devices/MMIC within 100 GHz.High accurate GaN device model is built matched to the processing platform which forms the model store for GaN Active, Passive device.Already shifted from 3 inches to 4 inches at 2nd Quarter of 2014.
17GaN Power MMIC Product Series 90-96GHz0.5W/8dB/10%34-36GHz13W/14dB/20%16-18GHz30W/20dB/35%GHz50W/23dB/40%6-18GHz10W/16dB/20%2-18GHz3W/7dB/15%GHz50W/25dB/45%
18GaN Power Transistor Series Products 9-10GHz130W/7dB/36%GHz120W/12dB/55%5-6GHz100W/8dB/40%4.4-5GHz120W/10dB/45%GHz150W/12dB/45%GHz30W/13dB/60%GHz65W/15dB/60%0.9-2GHz100W/11dB/45%
20Silicon devicesThe Silicon Research and Development facility of HSRI provides different ranges of Silicon Transistors and Hybrid Integrated Circuit.Microwave Power Transistors include Continuous-wave Transistors, Linear Power Transistors, Power Pulsed Transistors and LDMOS Power Transistors.The facility has also built an advanced 4″1um production line for customization offering.Products are widely served in Solid State Array Radars, Microwave Communications and Telemetry areas; low noise chips and low power LDMOS chips are widely served in TV receiving systems while optic-diodes are used in security systems of airports and stations.
21RF& Microwave Hybrid Integrated Circuits The Mini-Packaged Microwave/RF circuit centre of HSRI has developed into the largest Microwave/RF circuit supplier in China.Main categories include Crystal Oscillator, Surface mount RF/Microwave cost-effective components and High Reliable RF/Microwave components. Customized sub-system& integrated assemblies can be offered.Products are widely served in communication system, such as PHS, GSM, GSM-edge, CDMA and WCDMA&WLNA system. Moreover, those high reliable components are well equipped in aerospace& avionics industries with frequency range up to 40 GHz.
22RF& Microwave Hybrid Integrated Circuits FiltersOscillatorsRF/Microwave AmplifiersVCO and Integrated PLSRF/Microwave Mini Integrated Circuit
23RF& Microwave Hybrid Integrated Circuits New Update: TR Power SwitchesFrequency ranges from P band to X band, power ranges from 10W to 1500W, carrier and metal package can be selected.Typical P band Parameter Typical X band Parameter Frequency：100~400MHz Frequency：8.5~10.5GHzInsertion Loss：0.3dB Insertion Loss：0.7dBIsolation：50dB Isolation：30dBPeak Power：1500W Peak Power：20W(10%Duty Cycle，Pulse width 0.1ms) (40% Duty Cycle，Pulse width 6ms)
25RF& Microwave Hybrid Integrated Circuits Vertical Hole MEMS Filter (2-50GHz)With vertical hole of silicon cavity structure, we achieved the 2nd generation MEMS Filter by decreasing the dimension to 1/3, and increasing the rejection from 60dB to 80dB.1st Generation Silicon Filter VS. Traditional Cavity Filter1st Generation Silicon Filter VS.2nd Generation Silicon Filter
26Microwave& Millimeter-wave components, modules and subsystems The Microwave& Millimeter-wave Division has been providing high reliable Microwave and Millimeter-wave modules and subsystems to the market since 1960s.The division offers Microwave and Millimeter-wave T/R Modules, Power Modules and subsystem, single/multi channel T/R subsystem, Control Circuits and Frequency Source subsystem.Products are widely served in Radar and Satellite market.
27Microwave& Millimeter-wave components, modules and subsystems C band Chip T/R module30mm×30mm×8mm，15gGain：>30dBPsat：>39dBmPower Fluctuation：<±0.3dBP.A.E：>25%X band Chip T/R module20×20×6mmFrequency：8.6GHz-9.6GHz；Power Output：2 W；Rx Gain：23dB；Rx Noise Figure：4dB；
28Microwave& Millimeter-wave components, modules and subsystems 6-18 GHz wideband Minimized T/R module80mm×50mm×7.4mmFrequency：6GHz~18GHzTx Power Output：4WRx Gain：23dBRx Noise Figure：5dB34-36GHz 8 Channels T/R Module40mm×35mm×4.3mmTx Power Output：26dBmRx Gain：16dBRx Noise Figure：4.2dB
29Microwave& Millimeter-wave components, modules and subsystems X band Minimized Chip T/R module80×30×8mm3Frequency：8～12GHz；Psat：≥10W (CW) ；Tx Efficiency：≥20%；Max Input Power：≥10W；
30Microwave& Millimeter-wave components, modules and subsystems Millimeter Wave T/R module solution6 chips：0.4W/ Gain 30dB(33~37GHz) 5 bits PHS ATTEN2 chips：24dBm/ Gain 15dB(19~23GHz) Bits PHS5 chips：0.4W(33~37GHz) 5 bits PHS ATTEN2 chips：24dBm(19~23GHz)3 chips：0.2W/ Gain 30dB(33~37GHz) 5 bits PHS ATTEN
31Optoelectronic devices and modules The research and development center of Optoelectronic division engages in the opto-semiconductor technologies and the commercialization of solid state lighting solutions, across both visible and non-visible spectrums.Core products include High Power Semiconductor Laser Arrays, Pulse Laser Arrays, High Power LED and AlGaAs/GaAs Quantum Well Infrared Photodetector ( QWIP ).Products have been widely served in fiber optics, navigation, telemetry, avionics, guidance, identification and lighting industries.
32MEMS devices and modules The MEMS division is one of the earliest and largest MEMS Industrial Research Centers in China.Products include Micro Inertial Devices, Microsensors, RF MEMS Devices and Opto-MEMS DevicesProducts are applicable in satellite, aircraft, attitude control of carborne and radar antenna, navigation and guidance markets.
33MEMS devices and modules MSG Series GyroscopeMSA Series AccelerometerMPA Series AccelerometerMVS Series Vibration SensorMFS Series Air Flow SensorSiMF Series MEMS FilterMOA Series Optical AttenuatorMGM Series Gas Meter……MEMS GyroscopeMEMS AccelerometerMEMS FilterAir Flow Sensor
34High g Accelerator Sensor MEMS devices and modulesMEMS AcceleratorsMEMS AcceleratorHigh g Accelerator Sensor
36Packaging SolutionsThe Packaging Division has been providing components and custom integrated packaging solutions for more than 40 years. It is awarded as ‘National Industrial Experimental Base of High-Density Packaging for Large Scale Integrated Circuit’.The division has developed Microwave devices packages, High-Density packages, Micro packages, Optoelectronic devices packages and MEMS packages. A Multilayer Ceramic Package Development & Production Line has been built, and equipped with fully automatic Multilayer Ceramic Package production facility and advanced electronic packaging design system.