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1 NIKHEF 28 JAN 2013 Centre Nacional de Microelectrònica (IMB-CNM) Institut de Física d’Altes Energies(IFAE) Enric Cabruja (IMB-CNM) Manuel Lozano (IMB-CNM)

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Presentation on theme: "1 NIKHEF 28 JAN 2013 Centre Nacional de Microelectrònica (IMB-CNM) Institut de Física d’Altes Energies(IFAE) Enric Cabruja (IMB-CNM) Manuel Lozano (IMB-CNM)"— Presentation transcript:

1 1 NIKHEF 28 JAN 2013 Centre Nacional de Microelectrònica (IMB-CNM) Institut de Física d’Altes Energies(IFAE) Enric Cabruja (IMB-CNM) Manuel Lozano (IMB-CNM) Thorsten Lux (IFAE)

2 2 NIKHEF 28 JAN 2013 Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona 2012 Budget: 11,5 M€ External funding: 49,4 % Project funding splitting: EU FP: 26 % National (includes Eur. JTI): 40 % Industrial contracts: 35 %

3 3 NIKHEF 28 JAN 2013 idea product CNM covers all the Value Chain Strategic vs Pragmatic Long term vs short term Top down vs bottom-up Industrial (partic. SMEs) weight balance in the consortium R&D Value Chain at CNM

4 4 NIKHEF 28 JAN 2013 IMB-CNM Structure Micro & Nanosystems Department Systems Integration Department ICTS: Micro & Nanointegration Clean Room

5 5 NIKHEF 28 JAN 2013 Main Clean Room 1,500 m 2 Class ,000 CMOS integrated circuits Microsystems technologies Nanolithography and nanofabrication Back-end Clean Room 40 m 2 Class 1000 Chip packaging High Density FlipChip Main Clean Room 1,500 m 2 Class ,000 CMOS integrated circuits Microsystems technologies Nanolithography and nanofabrication Back-end Clean Room 40 m 2 Class 1000 Chip packaging High Density FlipChip Integrated Micro and Nano Fabrication Clean Room

6 6 NIKHEF 28 JAN 2013 Microsystems / Sensors Characterization General Chemistry / Chemical Transducers Biochemical Systems characterization Chemical Transducers Integrated Optics Power Circuits and Systems characterization Thermal reliability Integrated Circuits and systems Advanced packaging Radiation Detectors Reverse Engineering Integrated Optics SAM/SEM Prototyping 3D Rapid Manufacturing Research & Application Laboratories

7 7 NIKHEF 28 JAN 2013 MICRO & NANO INTEGRATED SYSTEMS IMB-CNM Research Focus Food and Environment Health Energy

8 8 NIKHEF 28 JAN 2013 People – 3 permanent doctors – 2 contracted doctors – 4 PhD students – 2 Engineer Activities started in 1996 Experiments – Members of the RD50 CERN Collaboration – ATLAS, ATLAS upgrade (sLHC) – GRI (Gamma Radiation Imager) Radiation Detectors group

9 9 NIKHEF 28 JAN 2013 Silicon radiation detectors – Layout design, simulation, fabrication, characterization – Pad, strip and pixel designs – P-in-N, N-in-P and N-in-N technologies developed – Silicon oxigenation 3D detectors – Electrodes deep into silicon bulk – Low full depletion voltage Pad pitch adaptors for detector modules – ATLAS-SCT Forward Modules Medical imaging – X-ray radiation pixel detectors – DEAR-MAMA European Project – Real time stereotactic biopsy – Complete pre-industrial system Hardware, software, and chip design Radiation effects on devices and materials – Thin dielectrics for submicronic technologies – Silicon radiation detectors – MOS, BiCMOS and bipolar devices High density bump bonding – Fine pitch by electrodeposition – For image devices Activities in Radiation Detectors

10 10 NIKHEF 28 JAN 2013 Technologies: – P-on-N, N-on-P, N-on-N – Pad, strip and pixels detectors – High resistivity poly, capacitive coupling, two metal layers, two side processing – Limited to 4 inches wafers – Radiation hard devices: Oxygenated FZ and magnetic Czochralski silicon. Detector design and fabrication

11 11 NIKHEF 28 JAN 2013 Sentaurus (Synopsys) Technology simulation Electrical simulation – Static and dinamic – Charge collection in 3D Detector simulation

12 12 NIKHEF 28 JAN 2013 DearMama project: digital mammography system Pixel silicon detectors fabricated at CNM We investigated the use of CdTe from Acrorad. Use of Medipix2 chip Detectors for x-ray imaging Fabricated at CNM Read-Out at IFAE

13 13 NIKHEF 28 JAN 2013 In collaboration with IFAE Bump bonding already working Medipix and ATLAS pixels successfully bonded Now working to increase yield and qualify the technology SET/Süss FC150 machine 1 micron placing accuracy In-situ reflow Bump Bonding Hybridization

14 14 NIKHEF 28 JAN : start of IFIC-CNM collaboration 1998: first detector fabrication (simple diodes) 1999: silicon oxygenation technology 2000: P-on-N pad detectors (RH 1x10 15 cm -2 ) 2002: P-on-N & N-on-P strip detectors (RH 5x10 15 cm -2 ) 2003: Signature of contract with CERN for pitch adaptors production at CNM clean room for ATLAS End-Cap SCT 2003: N-on-N strip detectors (double-side processing) (RH 5x10 15 cm -2 ) 2005: MCz strip detectors (RH 1x10 16 cm -2 ) 2005: End of ATLAS fanins production at CNM’s Clean Room 2006: Moderated p-spray N-on-P strip detectors 2007: Mammography System 2007: Pixel detectors 2008: 3D detectors technology 2008: ALiBaVa System development 2009: Ultra-thin 3D detectors 2009: Proposal of SiGe tech for FE 2010: Neutron detectors 2010: Edgeless detectors 2010: Evaluation of LDMOS 2011: Transparent detectors for alignment 2011: Signature of contract with CERN for the fabrication of 1/3 IBL of pixel 3D sensors together with FBK Achievements

15 15 NIKHEF 28 JAN 2013 Pitch adaptor production – 10,000 pieces for ATLAS Inner Detector Endcaps in three years – The biggest commercial contract of IMB-CNM/D+T – WE contracted new technicians working only for this production – Good experience Some examples: ATLAS pitch adaptors

16 16 NIKHEF 28 JAN 2013 Material – Silicon doping: n-type – Thickness: 800 microns – Resistivity: between 20 and 30 kOhm·cm Electrode structures – Electrodes formed to run orthogonally on both sides of the silicon. – Electrode strip length: ~ 4 cm – Electrode strip pitch: 500 µm – Electrode strip width: 400 µm – Interstrip gap: 100 µm – Electrode strip material: End of strip connection suitable for wire bonding. – Number of strips: 64 on each side (total 128) – Guard ring: Multiple guard ring structures >= 1mm wide with channel stoppers – Signal coupling: DC Performance – Leakage current < 12 nA/cm2 at 20°C – Gettering process to reduce leakage current: Yes Samples delivered – D+T will process at least 10 wafers to ensure at least 7 working detectors. – The detectors will be delivered cut. Some examples: Double Side Detectors

17 17 NIKHEF 28 JAN 2013 Some examples: Double Side Detectors

18 18 NIKHEF 28 JAN 2013 Double sided 3D technology developed at CNM- Barcelona – Holes are etched from both sides – Reduction of stress – Simplification of fabrication process Not compatible with thin wafers – Support wafer ca not be used Complete process at our Clean Room – Second demonstration of 3D feasibility after Stanford 3D pixel detectors for Insertable B-layer for ATLAS Current manufacturers: (Stanford+Sintef), FBK, CNM Good results proved with Medipix2 chips Atlas chips under study Some examples: 3D pixel detectors

19 19 NIKHEF 28 JAN ) Process backside of thick detector wafer (structured) implant. 2) Bond detector wafer on handle wafer. 3) Thin detector wafer to desired thickness (grinding & etching). 4)Process front side of the detector wafer in a standard (single sided) process line. 5) Etch handle wafer. If necessary: add Al-contacts. Leave frame for stiffening and handling, if wanted Some examples: Thin detectors using SOI wafers

20 T. Lux

21 21 NIKHEF 28 JAN : Start R&D efforts for a MPGD TPC for T2K European GEM collaboration: UniGe, IFIC, INFN Bari, IFAE 13/12/ Thorsten Lux (IFAE/UAB) 21/19 2 GEM tower 3 GEM each ~20x24 cm2 also small setup at IFAE T2K: MPGD Detector R&D

22 22 NIKHEF 28 JAN /12/ IFAE participated in setting up testbench characterization of ~ 90 MM modules ~12 m2 readout area nowadays focus on analysis T2K: MPGD Detector R&D

23 23 NIKHEF 28 JAN 2013 Electroluminescence Detector R&D 13/12/  Started for a double beta experiment in 2005  Set up a high pressure gas system at IFAE  First stage: small chamber with 5 APDs  Allowed to develop readout electronics  Excellent energy resolution achieved  Low threshold possible (8.2 ± 0.1)% FWHM xenon 23

24 24 NIKHEF 28 JAN /12/ Larger chamber with 25 APDs Pressure up-to 5 bar Focus on tracking EL Detector R&D

25

26 26 NIKHEF 28 JAN 2013 Electroluminescence (EL) 13/12/ between two parallel meshes (G1,G2) a voltage is applied operated below the point where charge amplification sets in linear production of light (~172 nm for Xe) -> better energy resolution light is read out by PMT/APD/MPPC/… gain of photons per e- at 10 bar possible G1 G2 Sensors e- Drift region EL gap Cathode

27 27 NIKHEF 28 JAN 2013 Granted Spanish project: Openning a new line in gaseous detectors Proposal submitted to Qatar Foundation: Collaboration with a group in Qatar?? Collaboration with all of you??? Present and Future

28 28 NIKHEF 28 JAN 2013 Thanks for your attention!


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