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Www.morganproject.eu Materials for Robust Gallium Nitride Michał A. Borysiewicz, Eliana Kamińska, Anna Piotrowska Institute of Electron Technology Warsaw,

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Presentation on theme: "Www.morganproject.eu Materials for Robust Gallium Nitride Michał A. Borysiewicz, Eliana Kamińska, Anna Piotrowska Institute of Electron Technology Warsaw,"— Presentation transcript:

1 Materials for Robust Gallium Nitride Michał A. Borysiewicz, Eliana Kamińska, Anna Piotrowska Institute of Electron Technology Warsaw, Poland E-MRS Fall ‘10, 16 Sept. 2010, Warsaw

2 Outline Introduction to the MORGaN project Overview of each topic + results Training opportunities Contact information E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 2

3 Introduction E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 3

4 MORGaN- Materials for Robust Gallium Nitride Robust – capable of performing without failure under a wide range of conditions Merriam-Webster Dictionary GaN – wide band-gap semiconductor E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 4

5 Why GaN? Advantages over traditional semiconductors –Thermal & chemical stability (operation > 1000ºC) –High breakdown fields (DC to microwave > 5MVcm -1 ) Potential for technology improvements –Power electronics –Harsh environment sensors Drawbacks –Limited wafer availability –Material quality problems Defects & intrinsic material strain E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 5

6 Key objectives of the Project Develop GaN sensors & microwave transistors for harsh environments Materials –New nitride growth techniques –Novel diamond composite substrates –Diamond passivation Processing Packaging E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 6

7 MORGaN topics 1.) III-V materials Improved GaN films –Low stress and low defect density –Optimisation of InAlN/GaN heterostructures 2.) Diamond-based materials Innovative diamond-based composite substrates Nanocrystalline diamond coatings for passivation & heat removal 3.) Harsh environment devices High power electronic devices Sensors for harsh environments 4.) Packaging and metallisation For harsh environment applications. E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 7

8 MORGaN consortium UK S WEDEN F RANCE S WITZERLAND G REECE G ERMANY H UNGARY S LOVAKIA A USTRIA C ZECH R EPUBLIC P OLAND 24 partners; 11 nations Project lead organisation: Alcatel-Thales III-V Labs E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 8

9 Topics & results E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 9

10 1.) III-V materials Objectives –New substrates for low defect density GaN Polycrystalline diamond/Si sandwich hybrid substrates Compliant heterostructures for growing GaN film –Growth optimisation of InAlN/GaN heterostructures Harsh environment electronic & sensing applications Novel approaches –New In x Al 1-x N/GaN heterostructures Lower intrinsic mechanical stress Minimises material degradation Originally developed in FP6 –“Nano-columns" technique Developed at the University of Bath Used to grow low defect density GaN film. E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 10

11 Nano-columns distort to accommodate strain and deflect dislocations Arbitrary substrate Near defect-free epi-layer (formed by coalescence of nano-columns) b) Seeded nano-columns a) Seed layer c) MORGaN technology 1 Nano-columns E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 11

12 2.) Diamond-based materials Diamond –Highest thermal conductivity of any solid ~2000Wm -1 K -1 in high quality CVD diamond –Potentially the ultimate substrate for high temperature & extreme power applications GaN alloys –Impressive power handling capability. Objectives MORGaN will develop diamond/ GaN hybrids –Thermal behaviour of diamond –Electrical efficiency of GaN E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 12

13 MORGaN technology 2 Nano-crystalline diamond coating Diamond overgrowth for thermal management Large area diamond overgrowth –Polycrystalline diamond deposition by hot-filament CVD Sapphire Sub. SiC Sub. Diamond (Sapphire Sub.) Diamond (SiC Sub.) Simulation of performance of HEMTs/ Al 2 O 3 and SiC E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 13 Typical HEMT structure

14 3.) Harsh environment devices “External harsh environment” Extreme heat Pressure High electric fields Chemically aggressive substances. “Internal harsh environment” Power dissipation from large current flow at high bias E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 14

15 3.) Harsh environment devices Cantilever pressure sensor Drumskin pressure sensor 1kW 2GHz power bar E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 15

16 MORGaN technology 3 Cantilever pressure sensor Based on a double cantilever design chip ‒ One cantilever deflected by a probe attached to a flexible membrane ‒ Second cantilever – reference for temperature compensation Signal – due to the piezo-electric effect in the GaN under strain Sensor chip Temperature sensor Double cantilever structure Solder pads optical microscope image of a GaN-based cantilever cantilever deflection measured using optical interferometry E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 16

17 MORGaN technology 3 Drumskin pressure sensor Alternative design: HEMT sensor directly integrated in a diaphragm Diaphragm used for the detection of pressure (100 – 1000 atm) Membrane strain transferred to a GaN-based sensing device Circular HEMT as a pressure sensing device Advantages to this design: Simple C-HEMT fabrication and integration on membrane structure Parasitic gate leakage current significantly suppressed A large gate area easily achieved. E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 17

18 250W power chip specified and designed 90 fingers (each 400µm long) Die size 1mm x 5mm Four chips be co-packaged to build a 1kW device Test chips manufactured and tested 2 mm power cells DC and CW characterisation performed Very good yield obtained on power device and power die State-of-the-art results! 6.6 W/mm and 70% MORGaN technology 3 Towards a 1kW 2GHz power bar demonstrator E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 18

19 4.) Packaging and metallisation Objectives To develop packaging and metallisation solutions that are: –Thermally stable and compatible –Chemically stable MORGaN novel approaches –Advanced 3D ceramic packaging –New metallisation techniques Emerging technology of M N+1 A N X alloys –Ceramic/ metal systems for high temperature applications –Novel layer package manufacture techniques Permit very complex geometrical package and interconnect structures E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 19

20 MORGaN technology 4 Layer manufacturing Novel process to produce steel parts using ink-jet technology –Process uses a fine stainless steel powder (316L) –Sintered to full density –Other steels & metals (e.g. Ti) also possible –Resolution c. 20  m (x,y); 40  m (z) –Surface finish c. 4  m Large geometric freedom –Complex shapes for novel packaging possible. Dual purpose housings for either cantilever chip or drumskin device E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 20

21 Training opportunities E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 21

22 MORGaN training opportunities MORGaN offers many training opportunities –Ph.D. students Advanced and emerging knowledge on thesis topics Wider technological context –Established researchers and technologists Wide scope for new skills & information Residential course, May’10, Bratislava –Advanced instruction on core MORGaN topics Workshop –To be held in the second half of the project Research visits between MORGaN partners –Extended research visits (1-12 weeks duration) –Postgraduate student/ experienced researcher level. E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 22

23 Contact information E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 23

24 MORGaN contact information For more information: –Project leader Sylvain Delage ; Alcatel-Thales III-V Lab –Dissemination Bruce Napier ; Vivid Components –Website : Sign up for newsletter! E-MRS Fall ‘10, 16 Sept. 2010, Warsaw 24


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