Presentation on theme: "10/1/011 Fujitsu Microelectronics America, Inc. IIT C."— Presentation transcript:
10/1/011 Fujitsu Microelectronics America, Inc. IIT C
2 Fujitsu Microelectronics America, Inc. 10/1/01 Problems of Conventional Porous Materials Elastic Modulus Dielectric Constant Conventional Porous Silica (Template Type) Heat Organic Polymer Siloxane Polymer Difficult to achieve both compatibility. Film Destruction Mechanical Stress (CMP & Packaging) Pore Evaporation Large Pores Open Pores Low dielectric constant High mechanical strength k E Weak Low
3 Fujitsu Microelectronics America, Inc. 10/1/01 Design Concept of NCS (SOD) Nano-Clustering Silica: NCS Molecular-level cavities High mechanical strength Low dielectric constant Small Pore (Molecular-level Size) Heat Catalyst Nano-cluster Precursor Cavity Compatible! Strong combination using catalysts
4 Fujitsu Microelectronics America, Inc. 10/1/01 Mechanical Strength & Dielectric Constant Using nano-clustering material, the compatibility of 2.25 and 10 GPa was achieved. Dielectric Constant 5 15 2 3 0 10 4 1 Elastic Modulus [GPa] NCS k=2.25 Nano-clustering Material Template-type Porous Silica 10 GPa
5 Fujitsu Microelectronics America, Inc. 10/1/01 STEM of NCS Films Mean pore diameter = 2.8 nm Mean pore diameter > 10 nm Template TypeNCS (Non-template Type) Pore NCS has smaller pores with more homogeneous distribution. A decrease in pore diameter seems to be effective in improving film properties.
6 Fujitsu Microelectronics America, Inc. 10/1/01 Comparison in the Leakage Current Results Pore size reduction gives high insulation property for NCS. Breakdown Leakage Current [A/cm 2 ] Electric Field [MV/cm] NCS Good insulation property 2.3 E-7 [A/cm 2 ] 4.6 E-11 [A/cm 2 ] Template type
7 Fujitsu Microelectronics America, Inc. 10/1/01 No open pores in NCS Penetration depth: 65 nm No penetration Template type NCS Penetration Test Penetrated layer Cross-sectional SEM images after depositing ZrN CVD film ZrN Open Pore Closed Pore Penetration No Penetration ZrN Porous Low-k CVD Low-k film Deposited film
8 Fujitsu Microelectronics America, Inc. 10/1/01 Film Properties Reduction of pore size Homogeneous pore distribution Compatibility High film strength Low-k Outstanding film properties All film properties are improved in NCS. Average pore size [nm] Dielectric constant ( @1.0 V, 1 MHz ) Leakage current [A/cm 2 ] ( @ 0.2 MV/cm ) Resistance of penetration for CVD ZrN Elastic modulus [GPa] 11.2 2.25 2.3E-7 65nm penetration 6.0 2.8 2.25 4.6E-11 No penetration 10 Template TypeNCSProperties
9 Fujitsu Microelectronics America, Inc. 10/1/01 Evaluation of Pull Stress Cumulative Probability Plot of Pull Force Pull stress Neck No peeling No destruction Pull Force [mN] Cumulative Probability [%] NCS SiOC Cu/NCS multi-level interconnects were strong enough for the packaging process.
10 Fujitsu Microelectronics America, Inc. 10/1/01 Evaluation of Reliability Resistance of the Via-chains Monitors after the Thermal Stress ( 200ºC, 1000h ) No thermal stress-induced failure was observed. Resistance [ohm] Cumulative Probability [%] As prepared After thermal stress ( 200ºC, 1000h ) No deterioration