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Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002. Front-end electronics for silicon detectors F. Corsi, C. Marzocca,

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Presentation on theme: "Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002. Front-end electronics for silicon detectors F. Corsi, C. Marzocca,"— Presentation transcript:

1 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese Work in progress within the Bari group

2 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre ISS specs and directions Develop a solid state 64 pixel probe for  - ray imaging. Energy of the  photon : 140 keV. Event rate: 4 kHz. Probe area: 22mm x 22mm. Spatial res.: <2 mm.

3 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Si detectors Avalanche photo detectors; –good energy res. : ENC/M; –a portion of the leak. curr is increased by M; –high sensitivity of M to Vsupply and to T (2.5% /°C): diff. bias requirements; –poor linearity for charge measurement appl.

4 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Si detectors Silicon drift detectors; –good energy res. (low anode cap.); –good linearity (depending on det. design); –suitable for probe application; –leakage current (cooling); –double face processing.

5 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Si detectors PIN diodes; –acceptable energy res. (dep. on I leak and C D.); –exc. linearity; –low fab. cost; –active pixels; –simple readout scheme.

6 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Si detectors: ENC vs sh. time (Fiorini) (ENC/M)

7 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre st DESIGN of PIN + JFET structure (1999): PIN Diode Area = 0.32 mm 2 ;JFET’s W/L = 200/12  m. Tethrode, or double-gate JFET configuration: two separate front-gate / back-gate (p-well) contacts. 0.9 mm

8 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre nd DESIGN of PIN + JFET structure: Size = 1800 x 900  m 2, Diode Area = 0.8 mm 2, W/L=100/6 Smaller JFET cap + integrated feed-back and injection capacitors + p-stop floating ring (to reduce parasitic guard ring Cap)

9 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre other layout of PIN + JFET structures: 1800 x 900  m 2, Diode Area = 0.8 mm 2, W/L=100/4

10 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Character. of PIN diodes by IRST eff. act. area.: 3mm 2; peak wav.: 550nm; 550nm: 0.37A/W; Quantum 550nm: >80%; I leak < 50pA; C D =1pF; Cut-off freq.:110 MHz.

11 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Provis. design assumptions PIN diodes (active area+interc.); Segmented scint.: 5000 vis.ph/  ph; to el./  ph/det. pix.; FE ARCH.: CSA+SH.+LATCH.- DISC.; ENC <150 e - r.m.s. (I leak =50pA, C D +C bond =1.2 pF);

12 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Front-End structure 2 thresh. latched discr.. g m C C d i f o Shaper 2ndOrd. Test Input AnalogueFront-End CSA_out Shaper_out Detector C C Delay line to fast-or circuitry from trigger circuitry

13 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Probe architecture 1 st lev. 2 nd lev. to PC Read-out clock: f ck =160kHz Trigger from fast OR circuitry

14 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Probl. in deep sub- . tech. Stat. fluctuations of the FE performances. Mismatch problems beween circuit replicas (both intra-chip and inter-chip) at extr. low currents. Need of a robust design of the circuitry against process par. fluctuations.

15 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre CSA solutions Adaptive I leak canc. (Krummenacker);

16 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Adaptive P-Z canc. (Rehak et al.) CSA solutions (cont’d)

17 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Adaptive Vfp bias

18 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Adaptive Vfp bias

19 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Some exp. result on the adaptive P-Z CSA CSA in 0.8  m CMOS for SDD (spectroscopy) External shaper Internal shaper (adaptive pole-zero canc.)

20 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre Provisional conclusions and workplan Preliminary experiments with A250 (Amptek) FE; use of the adaptive P-Z CSA; design and fab. of first prototypes of CSA in deep submicron CMOS; electr. and stat. characterization of prot’s.


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