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ASE ASEK CSP-BGA (Sawing Type) Substrate Design Rev. :L Date : 04/13/04” Prepared : Damon_Hung.

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Presentation on theme: "ASE ASEK CSP-BGA (Sawing Type) Substrate Design Rev. :L Date : 04/13/04” Prepared : Damon_Hung."— Presentation transcript:

1 ASE ASEK CSP-BGA (Sawing Type) Substrate Design Rev. :L Date : 04/13/04” Prepared : Damon_Hung

2 ASE Content  Necessary Data Of Substrate Design  Substrate Structure  Ring / Finger Placement & S/M Design Rule  Finger Design Rule  Bonding finger width, wire quantity and wire diameter design rule  Outer Layer Trace Design Rule & Finished Value  Inner Layer Trace Design Rule & Finished Value  Via Design Rule  Dimension of Solder Ball and Pad/SM Opening  Laminate Blind Via Design

3 ASE  Package type  Body size  Substrate layer number  Bond pad number of ground / power / signal  Staggered or inline pad design  Actual die size or estimated min./max. die size  Solder ball number, location and pitch  Assigned ground/power ring number or segment location  Bond finger number for each side of package  Net list (pad no., net-name, ball no.)  Power consumption (Thermal requirement)  Electrical requirement Necessary Data Of Substrate Design

4 ASE Substrate Structure 2 Layer 4 Layer

5 ASE Ring, Finger Placement & S/M Design Rule

6 ASE Unit: mm 2-Side Wire bonding 4-Side Wire bonding A D B D A B C D Ring, Finger Placement & S/M Design Rule E

7 ASE Finger Design Rule and Finished Value 7 * The design value of finger is defined by finger top width.The top width value of this table can be manufactured by all suppliers and supplier didn’t need to do any compensation by themselves. The cycle time will be reduced.

8 ASE 8 Outer Layer Trace Design Rule and Finished Value

9 ASE 9 Inner Layer Trace Design Rule and Finished Value

10 ASE GPP+DOUBLE IMAGE PROCESS: Finger Design Rule and Finished Value 10 * The design value of finger is defined by finger top width.The top width value of this table can be manufactured by all suppliers and supplier didn’t need to do any compensation by themselves. The cycle time will be reduced.

11 ASE 11 GPP+DOUBLE IMAGE PROCESS: Outer Layer Trace Design Rule and Finished Value

12 ASE Selective Gold Process: Finger Design Rule and Finished Value * The design value of finger is defined by finger top width.The top width value of this table can be manufactured by all suppliers and supplier didn’t need to do any compensation by themselves. The cycle time will be reduced.

13 ASE Selective Gold Process :: Outer Layer Trace Design Rule and Finished Value

14 ASE Finger Design Rule for Multi Bond (Double Bond,Triple Bond and Four Bond) 14

15 ASE Inner Layer Trace Design Rule and Finished Value

16 ASE

17 Vias Design Rule

18 ASE Dimension of Solder Ball and Pad/SM Opening

19 ASE The space from ball to package edge

20 ASE 20 Laminate Blind Via Design

21 ASE Substrate Structure Layer Finger Design Rule and Finished Value : same as Laminate PTH design. Finger Design Rule for Multi Bond (Double Bond, Triple Bond and Four Bond) : same as Laminate PTH design.

22 ASE Design Rule by Laser via - Outer layer PrototypeProduction Blind Via Diameter Trace width Blind Via land diameter Space Item# Via Via

23 ASE Design Rule by Laser via - Inner layer PrototypeProduction Blind Via Diameter Trace width Blind Via land diameter Space Item# Via Via

24 ASE Design Rule by Buried-Via(Inner Layer) PrototypeProduction PTH Diameter Trace width PTH land diameter Space Item# Via +150Via

25 ASE 25 GENERAL LF/TF WIRE BOND DESIGN RULE

26 ASE 1.0 Wire Selection Rule 1.1 Max wire length is 150 mils(3810 um) 1.2 Wire diameter depends on bond pad pitch and finger pitch. Bond Pad Pitch, Bond Pad Opening, Max Wire Length, Gold Wire, and Finger Pitch relationship

27 ASE 1.3 For Stagger Bond Pad Layout ( Stagger Bond Pad wire diameter depend on finger pitch ) Finger pitch >=140 um, Wire diameter choose 1.0 mils. Max wire length is 3556 um (140 mils) Finger pitch < 140 um, Wire diameter choose 0.9 mils. Max wire length is 3302 um (130 mils). 1.4 Special definition : When pad pitch > 100 um and Max wire length < 130 mil, 0.9 mils gold wire is allowed for cost down. Note : Control wires length the same as possible in the four sides. (No matter the inner and outer finger)

28 ASE 2.0 Wire Layout Design Rule Distance of wires criteria,Cross Pad and finger criteria control If wire B ≦ wire A, wire B can't cross adjacent bonding pad of wire A ( 當 wireB 的線長小於等於 wireA 時, wireB 不可橫跨相鄰 wireA 的鋁墊 ) 2. If wire C ≧ wire B, wire C can cross adjacent bonding pad of wire B, but need to have one wire diameter space between wire C and wire B. ( 當 wire C 的線長大於 wire B 的線長時, wire C 可以橫跨 wire B 的鋁墊,但 wire C 和 wire B 之間需有一倍線徑的距離。 ) Same finger layer or same ring layer is equal to the same wire length. ( 同弧的手指或同一 ring 視為相同線長 ) C B A 2

29 ASE 3. Cross adjacent Finger : not allowed. ( 銲線不可橫跨同排相鄰的手指 ) 4. Wire to wire distance > 1 wire diameter (Min). ( 線與線間距 >1 倍線徑 ) 5. Finger (Inner/Outer) direction must be parallel to wire direction as possible. The max angle θ < ± 15°. ( 手指方向儘可能與金線平行,如不行時必須控制在 15 度內。 ) 3 4 Best Bad θ θ 0°0° 5 Note 5 : When two dies use same substrate, the single finger could be bond different wire for different die.The Finger direction must be set the center of the angle which make up by the different wire. ( 當同一基板套用不同 Die 時, 單一手指可能被不同 die 的線連接, 此手指方向必須坐落在 兩線夾角的中間 )

30 ASE 6. Trace can not exposed in the front of finger. Straight trace from the edge of the Solder mask > 150um. (Trace 不可在 Finger 前端露鍍金. Finger 前端的 Trace 必須在拒銲劑邊界 150 um 後才 能轉彎 ) 6

31 ASE 7. Follow select wire table (1.1) choose finger Pitch. ( 請依據表 1.1 來選擇 finger pitch) 8. For product which is fine pitch or the max wire length over 120 mils, all corner’s 1st ( 2nd ) fingers must have 2 ( 1.5 ) times finger pitch than normal finger pitch. ( 一般 finger pitch 的選擇請依照線長線徑的選擇表。針對 Fine Pitch 及線長超過 120 mils 的產品,各角落第 1 個(第 2 個) finger 的 pitch 必須有一般 finger pitch 2 ( 1.5 ) 倍的距離。) 7 Best Bad 8 Wire Alignment of inner and outer finger. ( For both single and staggered pad )

32 ASE Best Bad 9. distance between Inner finger and adjacent wire >1 wire diameter (Min). ( 內手指的兩側與相鄰長線之距離必須 >1 倍線徑 )

33 ASE Wire angle of inner finger ( 內手指線之角度 ) 10. For Fine pitch product (BPP<=60um), the shorter wire of the front finger angle (Non-include the Power/Ground Ring) must equal or less than the calculated value from the formula which W/B project team provided. ( 針對 Fine Pitch 產品 (BPP<=60um), 前手指線 ( 不含 Power/Ground Ring) 其最小 角度必須依 W/B 專案組所提供之公式計算出。 )

34 ASE Inner pad wires cross outer pad wires rules ( 內鋁墊線需跨外鋁墊線之規則 ) 11. If C is small than 800um, the cross point must be smaller than half of inner pad wire length. ( 當前後手指 Pitch 小於 800um 時,交叉點必須小於內層鋁墊金線的一半。 ) 12. If C is larger or equal to 800um, the cross point can be larger than half of inner pad wire length. ( 當前後手指 Pitch 大於等於 800um 時,此時交叉點可以大於等於內層鋁墊金線 一半。 ) A B C A B C 7. If C < 800um, B < A/2 8. If C >= 800um, B can be > A/2 Note: Don’t let wires cross each other as possible as you can, even the wires are in different pad level. ( 即使是不同鋁墊層的線,也儘可能不要讓線彼此交錯。 )

35 ASE 3. Device Design Rule Pad Size Layout PAD Size Device Size A

36 ASE 4 Ground/ Power Ring Rule Bonding ring width/space design rule POWER3 GROUND POWER1 POWER2 17 mils A BC D If bonding rings without S/M cover between, the length of wire which bond to outermost ring must <= 130 mil. ( 若 ring 和 ring 間不蓋上 S/M 時,則打至 ring 的線長不得大於 130mil)

37 ASE 5.Finger Layout Rule Loop type Inline type In-line Finger Rule

38 ASE Stagger Finger Rule Outer finger and Inner finger relation rule (without S/M cover) ( 前後手指相關規則 )( 無 S/M 蓋上時 ) X: Finger pitch between Inner finger and outer finger (X direction) (X: 前手指到外手指線中心之 X 方向距離 ) Y: Space between Inner finger and Outer finger (Y direction) (Y: 前、後手指之 Y 方向距離 ) If Y (Finger top width) + (Wire diameter) ( 如果 Y 小於 300um , X 必須大於手指 top width 加上線徑 ) If Y ≧ 300um, may let X no limit ( 如果 Y 大於等於 300um ,則 X 不限制 ) X Y Outer finger Inner finger

39 ASE 6.Solder Mask Design Rule A B C D Note: Cover solder mask as possible If the solder mask cover area (D) larger then 150um ( 如果拒銲劑可覆蓋寬度 (D) 大於 150um ,則儘可能的覆蓋拒銲劑。 )


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