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Power Matters Microsemi SiC MOSFETs May 2014
Power Matters Introducing Microsemi’s NEW SiC MOSFETs! ©2014 Microsemi Corporation CONFIDENTIAL
Power Matters Microsemi SiC MOSFETs ©2014 Microsemi Corporation CONFIDENTIAL Microsemi Advantages Best in class R DS(ON) vs. Temperature Low Switching Losses Low Conduction Losses VoltageCurrentR DS(ON) Part NumberPackageAvailability 1200V 40A80mΩ APT40SM120BTO-247 Summer 2014 APT40SM120SD3 APT40SM120J *Current Rating TBD SOT A50mΩ APT50SM120BTO-247 APT50SM120SD3 APT50SM120J *Current Rating TBD SOT V20A160mΩ TBD October V80A40mΩ TBD November V100A25mΩ TBD December V20A120mΩ TBD March 2015 Short Circuit Rated Superior Stability Microsemi patented SiC MOSFETs
Power Matters Microsemi SiC MOSFETs Exceptional Transistor DC Parameters
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL Best in Class R DS(ON) vs. Temperature Competitor 2 80mΩ Competitor 1 80mΩ Microsemi APT40SM120B 80mΩ Microsemi APT50SM120B 50mΩ
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL High Transconductance Results in higher gain and faster switching Competitor 1 80mΩ Microsemi APT40SM120B 80mΩ Microsemi APT50SM120B 50mΩ
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL Ultra Low Gate Resistance Minimized Switching Energy Loss & Higher Switching Frequency APT50SM120B 50mΩ APT40SM120B 80mΩ Competitor 2 Microsemi Competitor 1 Oscillation-free with minimal external R G Microsemi Low R G Competition High R G
Power Matters Microsemi SiC MOSFETs Superior Dynamic Performance
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL Switching Energy Benchmark † Tc=25°C
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL Superior Maximum Switching Frequency Microsemi APT40SM120B 80mΩ Microsemi APT50SM120B 50mΩ Competitor 1 80mΩ † Tj=150°C; Tc=25°C † Tj=150°C; Tc=75°C Dynamic performance breakaway enablers: Superior EON (t on ) due to high gm, ultra low RG Superior EOFF due to extremely low RG Low RDSON at high temperatures extends switching frequency, current capability Microsemi APT50SM120B 50mΩ Microsemi APT40SM120B 80mΩ Competitor 1 80mΩ
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL Maximum Switching Frequency Benchmark Dynamic performance breakaway enablers: Superior EON (t on ) due to high gm, ultra low RG Superior EOFF due to extremely low RG (yet oscillation free with very low external RG) Low RDSON at high temperatures extends switching frequency and current capability † Tj=150°C; Tc=75°C Microsemi APT40SM120B 80mΩ Microsemi APT50SM120B 50mΩ Competitor 2 80mΩ
Power Matters Microsemi SiC MOSFETs Outstanding Ruggedness
Power Matters © 2014 Microsemi Corporation CONFIDENTIAL Competitor 1 80mΩ Superior Short Circuit Withstand Microsemi’s SiC MOSFETs demonstrates 25% longer short circuit capability Microsemi APT40SM120B 80mΩ Competitor 1 Microsemi
Power Matters Summary – Microsemi SiC MOSFETs ©2014 Microsemi Corporation CONFIDENTIAL Microsemi’s Best-in-Class SiC MOSFETs enable customers’ to design ultra efficient high power electronics Microsemi Advantages Best-in-class R DS(ON) vs. Temperature Low Switching Losses Low Conduction Losses Short Circuit Rated Superior Stability Microsemi patented SiC MOSFETs
Power Matters Microsemi SiC MOSFETs Recommended Gate Drivers
Power Matters SiC MOSFET Recommended Gate Drivers Avago part number HCPL-3180 >2.5V logic (opto-isolator) 630 V peak maximum working insulation voltage (higher voltage versions available) Single Channel Supports -3V to +20V Vg (<25V difference) 2.5A peak current 200ns maximum delay 25ns typical rise/fall time 8-pin through-hole / surface mount packages Rohm part number BM6101FV-C 5V logic 2500 V rms isolation Single Channel Supports -5V to +20V Vg (<36V difference) 5A peak current 350ns maximum delay 50ns typical rise/fall time Short Circuit Protection 20-pin surface mount package Microsemi Applications Engineering team is available to provide technical support for implementing SiC MOSFET solutions ©2014 Microsemi Corporation CONFIDENTIAL
Power Matters Thank You!
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