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Published byDraven Hosmer Modified about 1 year ago

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C ZnO

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kristall bindning

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N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N

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N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N

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Eks: Si Eks: GaAs

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Par av e - og hull (h + ) (EHP) ! Intrinsisk Si

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Ekstrinsisk Si N-type P-type

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Kvantbrunn

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Fermifordelning i intrinsisk, n-type og p-type material n p n = p

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Schematic band diagram Density of states Fermi-Dirac distribution Carrier concentration

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RT

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Variation of mobility as a function of total doping concentration (N a + N d ) for Si, Ge and GaAs at 300 K

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To materialer i likevekt

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Hall effekt

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