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DU’s proposed participation in the CMS Upgrade – Phase-II R&D A.Bhardwaj, A.Kumar, M. Naimuddin, K.Ranjan, R.K.Shivpuri Center for Detector & Related Software.

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Presentation on theme: "DU’s proposed participation in the CMS Upgrade – Phase-II R&D A.Bhardwaj, A.Kumar, M. Naimuddin, K.Ranjan, R.K.Shivpuri Center for Detector & Related Software."— Presentation transcript:

1 DU’s proposed participation in the CMS Upgrade – Phase-II R&D A.Bhardwaj, A.Kumar, M. Naimuddin, K.Ranjan, R.K.Shivpuri Center for Detector & Related Software Technology (CDRST) Delhi University (DU), Delhi, India India-CMS Meeting, BARC, 28 July – 29 July, 2011

2 Si Tracker Upgrade Ashutosh Bhardwaj, Kirti Ranjan, R.K. Shivpuri

3 Our Interest Showed interest in Si Upgrade in Tracker in 2010 – Discussed with Frank Hartmann (then coordinating the overall sensor R&D activities and now Deputy PM) & Duccio Abbaneo (phase 2 overall coordination incharge) in May 2010. – Several approved R&D projects for phase-II. Phase I R&D was frozen. “Development of pixel and micro-strip sensors on radiation tolerant substrates for the tracker upgrade at SLHC”: Contact Person: M. de Palma ; submitted: April 2008 ; status: Approved; CMS SLHC RD #08.03 “Materials, technologies and simulations for silicon sensor modules at intermediate to large radii of a new CMS tracker for SLHC” ; Hamburg, Karlsruhe, Louvain, Vienna, Vilnius; submitted: March 2008 ; status: Approved; CMS SLHC RD # 08.02 As a first step, we mutually decided to start up with some effort at DU in the existing R&D and then put up a formal presentation in the Tracker Group => Si Device Simulation

4 Proposal from Frank Hartmann on Si Device Simulation (July 2010): The 12 strip of the multi-geometry strip cells, which comes with different pitches & widths, in p-in-n & n-in-n version, also with p-spray and p-stop (isolation) The first goal should be to understand (interstrip) capacitance values, isolation and breakdown to support the measurements we are going to do. Further steps could be possible improvements of the geometry. Understanding of behavior after irradiation. As a second step, we should simulate some cells of the multi-geometry long pixel structures, which come in the same configuration but in addition with R poly biasing & punch-through biasing… Si Device Simulation Alberto Messino (Upgrade Sensor WG convener) volunteered to step in to define and watch the simulation program. Start with a sort of "calibration" or better a comparison of our simulation with existing published work. Claudio Piemonte, Device Simulations of Isolation Techniques for Silicon Microstrip Detectors Made on p-Type Substrates,in «IEEE TRANSACTIONS ON NUCLEAR SCIENCE»,vol. 53,n. 3,2006, pp. 1694-17052006

5 Tracker – Phase 2 Organization

6 Si Device Simulation– First Results Tracker Week Meetings (11 - 15 Oct. 2010, CERN) - Upgrade Sensor WG meeting, - Frank Hartman (Sensor Technology Co-ordinator) nfId=80952

7 Si Device Simulation– First Results Simulation effort to support the HPK campaign 20‘ s&confId=80952 Device Simulation Using ATLAS- Device Simulation Program From Silvaco Two n+ neighbouring strips, with two intermediate p+ stops. Report to Collaboration in India-CMS Meeting, 28 Oct. – 29 Oct. 2010

8 Si Device Simulation– First Results Upgrade Plenary Meeting; Friday 15 October 2010 Progress and plans for sensors R&D 20' Speaker: F. Hartmann

9 Si Device Simulation– Further work Continuous EVO meetings and discussions with Alberto Messino Presented Results on MSSD Simulation in Tracker Week Meetings, 14 - 18 Feb. 2011 MSSD Simulation Results 20'

10 Si Device Simulation– Further work Comparison Experimental/Simulation Measurement Design # 3 At low voltage the dip in the capacitance is similar At Saturation, Exp DC-Cint = 0.9 pF > Sim DC-Cint = 0.63pF Exp Vsaturation = 200-250V > Sim Vsaturation = 100-150V 0.9pF 0.63 pF 200-250V 100-150V Similar behavior for low voltage 10 EXP Cint SIM DC Cint Q F = 1e10 cm -2

11 Upgrade Phase II Plenary, 14 Feb. - 18 Feb. 2011 Overview of HPK sensors project, Alexander Dierlamm 45' Si Device Simulation– Further work

12 Several groups showed their interests in Process/Device Simulation Si Device Simulation– Further work

13 Simulation – SLHC Sensor R&D ensorDevelopment ensorDevelopment#Simulations elopment/Simulation_tasks_V1.pdf

14 Simulations: Alberto Messineo (Universita di Pisa-Sezione di Pisa (INFN)), Tracker Week Meetings, 18 – 22 July, 2011 Simulation – SLHC Sensor R&D

15 Present Facilities at DU Ashutosh Bhardwaj, D. U. Class 10000 lab with class 100/1000 laminar flow tables (minor maintenance required) Keithley 237, Keithley 2410, Keithley 590 CV system Cascade Semi-automatic Probe Station Keithley 2400 Semiconductor Characterization System Few test structures from Frank for characterization

16 Tracker DPG Tasks (service work) Tracker Alignment using cosmics - present Results on Tracker Alignment in – Tracker Detector Performance Group Weekly meetings (Thursday 23 June 2011) – Weekly Tracker DPG meeting (08 July 2011) Reported by Alignment conveners (Gero Flucke & Alessio Bonato) in Tracker General Meeting @ CMS Week, June 28th, 2011 ?contribId=5&sessionId=0&resId=0&ma terialId=slides&confId=142604 ?contribId=5&sessionId=0&resId=0&ma terialId=slides&confId=142604

17 Proposal– SLHC Sensor R&D We have shown interest in participation in all activities related with Si Sensor R&D in phase II of the CMS – Simulation – already shown encouraging results – will continue. Characterization – few test structures to be characterized. Fabrication of sensors/test structures – will explore the possibility Interested in giving a presentation in Tracker Institutional Board meeting for formal induction 6k CHF /PhD/annum will be needed under M&O-B for Tracker from the year 2013. (for year 2012 – it’s 3k CHF per PhD) Also interested in joining RD50 (Radiation Hard Si Sensors R&D) – 3K CHF/institute/annum – lot of European facilities/expertise

18 MPGD Upgrade A.Kumar, Md. Naimuddin, R.K. Shivpuri

19 GEMs for CMS high eta upgrade(MPGD) The Physics case of challenging post-TDR scenario where: -300 fb -1 already collected -centre-of-mass energy: 14TeV, lumi 2-3 x 10 34 cm -2 s -1 -events are with nominal or 2 x nominal pile-up Physics Goals: Boosted objects with muon-decay channels, asymmetry, coupling & spin measurements, fusion processes. High luminosity physics:=> making a case for a coherent detector system in the true “forward” eta region - Triple boson production, Z’ factory physics, Exotic with light object decaying to muons The GEM technology is likely to be a strong candidate for “forward” tracking: -spatial resolution ~ 100 microns, time resolution 98% -precise tracking and fast trigger information simultaneously -can be designed with sufficiently fine segmentation to cope with high particle fluxes ~ (1MHz/mm2) at LHC

20 GEMs for CMS high eta upgrade(MPGD)

21 ==>Possible participation 1.MPGD R&D and fabrication (GEM foils, mechanics, readout circuits etc) 2.Module testing and characterization (using cosmic muons, X-ray test up) 3.DAQ (Fast Electronics, Power supplies, Cables, Gas mixing unit etc) 4.Beam test participation and online analysis at CERN 5.Beam test Data Analysis 6.Detector Simulation 7.Physics Potential (MC studies) ==> Possibility of putting PhD students.

22 Back UP

23 Software: Silvaco Tools 23 Device Simulation – ATLAS (2D Silicon Device Simulator) – S-PISCES (2D Silicon Device Simulator) – LUMINOUS (2D Optoelectronic Device Simulator) – BLAZE (2D Device Simulator for Advanced Materials) – Device 3D (3D Device Simulator) – TFT (Amorphous & Polycrystalline Device Simulator) – QUANTUM (3D Simulation Models for Quantum Mechanical Effects) – FERRO (Ferroelectric Field Dependent Permittivity Model) Process Simulation – ATHENA Framework – S-SUPREM4 (Process Simulator) – MC Implant (Monte-Carlo Implantation Simulator) – ELITE (Physical Etching and Deposition Simulator) – OPTILITH (2D Optical Lithography Simulator) – MC Deposit/ETCH (2D Monte Carlo Deposition & Etch Simulator)

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