Download presentation

Presentation is loading. Please wait.

Published byDalia Lardner Modified over 3 years ago

1
Prinsipp for transistor i D = (15 V)/(1000 Ω) =15 mA i D = (0 V)/(1000 Ω) = 0 ”load line”

2
JFET (Junction Field Effect Transistor)

5
xx+dx

6
JFET (Junction Field Effect Transistor)

7
Figure 6.7 MESFET (Metal Semiconductor Field Effect Transistor )

8
MOSFET (Metal Oxide Semiconductor Field Effect Transistor )

9
MOSFET

10
Ulike typer av MOSFET

12
Likevekt Ansamling av hull Deplesjon av hull Ansamling av elektroner V=0 V>0 V<0V>>0

13
Q m = | Q d + Q n | V = V G = V i + Φ s

15
Figure 6.17Figure 6.18 Terskelspenning V T i virkeligheten; m s m < s

16
V T i virkeligheten; ladninger i gate-oksiden

17
MOSFET (Metal Oxide Semiconductor Field Effect Transistor )

19
Ei∞Ei∞ qΦ(x) = E i ∞ - E i (x)

20
MOSFET

21
V T i virkeligheten Figure 6.20 Influence of materials parameters on threshold voltage. (a) the threshold voltage equation indicating signs of the four contributions. (b) variation of V T with substrate doping for n- channel and p-channel n + poly-SiO 2 -Si devices.

22
V T år 1990 vs 2009 2009 n + poly-SiO 2 -Si devices Al-SiO 2 -Si devices 1990

23
C-V for n-kanale MOS-kapasitanse (~100 Hz) (~10 6 Hz) Figure 6.16: Capacitance-voltage relation for a n-channel (p-substrate) MOS capacitor. The dashed curve for V > V T occurs for high measurement frequencies.

24
y(x)

25
Påvirken av elektriskt felt ( E x og E y ) på kanalmobilitet

26
y(x)

27
Sammenlikning av likning 6:49 og 6:50

29
’Typical feature size’ vs tid for Si-DRAM (Moore’s lov) Figure 9.3

Similar presentations

Presentation is loading. Please wait....

OK

DMT121 – ELECTRONIC DEVICES

DMT121 – ELECTRONIC DEVICES

© 2018 SlidePlayer.com Inc.

All rights reserved.

To make this website work, we log user data and share it with processors. To use this website, you must agree to our Privacy Policy, including cookie policy.

Ads by Google