Download presentation

Presentation is loading. Please wait.

Published byDalia Lardner Modified about 1 year ago

1
Prinsipp for transistor i D = (15 V)/(1000 Ω) =15 mA i D = (0 V)/(1000 Ω) = 0 ”load line”

2
JFET (Junction Field Effect Transistor)

3

4

5
xx+dx

6
JFET (Junction Field Effect Transistor)

7
Figure 6.7 MESFET (Metal Semiconductor Field Effect Transistor )

8
MOSFET (Metal Oxide Semiconductor Field Effect Transistor )

9
MOSFET

10
Ulike typer av MOSFET

11

12
Likevekt Ansamling av hull Deplesjon av hull Ansamling av elektroner V=0 V>0 V<0V>>0

13
Q m = | Q d + Q n | V = V G = V i + Φ s

14

15
Figure 6.17Figure 6.18 Terskelspenning V T i virkeligheten; m s m < s

16
V T i virkeligheten; ladninger i gate-oksiden

17
MOSFET (Metal Oxide Semiconductor Field Effect Transistor )

18

19
Ei∞Ei∞ qΦ(x) = E i ∞ - E i (x)

20
MOSFET

21
V T i virkeligheten Figure 6.20 Influence of materials parameters on threshold voltage. (a) the threshold voltage equation indicating signs of the four contributions. (b) variation of V T with substrate doping for n- channel and p-channel n + poly-SiO 2 -Si devices.

22
V T år 1990 vs n + poly-SiO 2 -Si devices Al-SiO 2 -Si devices 1990

23
C-V for n-kanale MOS-kapasitanse (~100 Hz) (~10 6 Hz) Figure 6.16: Capacitance-voltage relation for a n-channel (p-substrate) MOS capacitor. The dashed curve for V > V T occurs for high measurement frequencies.

24
y(x)

25
Påvirken av elektriskt felt ( E x og E y ) på kanalmobilitet

26
y(x)

27
Sammenlikning av likning 6:49 og 6:50

28

29
’Typical feature size’ vs tid for Si-DRAM (Moore’s lov) Figure 9.3

Similar presentations

© 2017 SlidePlayer.com Inc.

All rights reserved.

Ads by Google