3Comprehensive Technology Portfolio 0.50µm0.35µm0.25µm0.18/0.16/0.152µm0.13µm0.13µmBiCMOS, SiGeSiGeSiGeSiGePower/BCDBCDBCDPower/BCDImage Sensor(X-Ray & Visible)Image Sensor(X-Ray & Visible)Image Sensor(X-Ray & Visible)eNVMeNVMRFCMOSRFCMOS and SOI CMOSRFCMOS and SOI CMOSRFCMOS and SOI CMOSMixed-SignalDigital CMOSMixed-SignalDigital CMOSMixed-SignalDigital CMOSMixed-SignalDigital CMOSMixed-SignalDigital CMOS3
4RF and HPA Applications and Technology RF and TunersFront-End ModulesRF CMOS and SiGe BiCMOSCell Phone, WiFi TxRxBasestation, Specialty WirelessTV, Satellite, STB TunersSOI Switch and SiGe Power AmplifiersPower AmplifiersAntenna SwitchPA ControllersmmWaveHigh Performance AnalogHigh Performance SiGeOptical Fiber NetworksAutomotive Radar60 GHz WiFi, 24GHz BackhaulLight Peak and ThunderboltGPS LNAComplementary BiCMOSLine Drivers DSL, HomePlug, ATEHDD PreAmpDAC, ADCBest-in-class SiGe, RF CMOS, RF models and Design Enablement4
5Front-End Module Technology ControllerSOI SwitchRF CMOS Controller Platform5V, 0.18um optimized CMOSUp to 50% die size shrink vs. 0.25um1.8V Logic, Bipolar, LDMOS optionsPlatform for integration of FEMThin-Film SOI (best in class Ron-Coff)Thick-Film SOI for ease of integration5V control, LNA, PA/Driver optionsPower AmplifierDesign Services and IPSiGe PA, through-silicon-via (TSV), IPDSiGe PA cells for WiFi and CellularTSV for low-inductance ground1.8/3.3/5V CMOS, high res optionsIPD (5um dual-Cu in development)Models, design tools and IPExample: PA Design Library (PADL)Example: 4T, 6T, 9T SOI Switch IPAnalog / RF Design ServicesBest-in-class SiGe, RF CMOS, RF models and Design Enablement5
6Schematic of Key Features in SiGe BiCMOS platform The SiGe HBJTs are embedded into complimentary BiCMOS platforms offering high performance RF , analog and digital performances.
7SiGe HBJT device structure The high-performance bipolar transistors are built “vertically” meaning that the n-p-n structure is created perpendicularly from the top of the wafer down.
8TowerJazz High Speed SiGe Processes SBC18HASBC18H2SBC18H3SBC13HASBC13H3StatusProd.Proto.Devel.CMOSVoltages1.8/3.3V1.2/3.3VHS BipolarFT (GHz)150200240FMAX (GHz)190270BVCEO (V)126.96.36.199CapacitorfF/µm22.8/5.62/4VaractorQ at 20 GHz10NA15LPNPBeta32730There are numerous other SBC18 flavors in production with variations in back end configuration, selection of available devices etc.Presented data mainly from the SBC18H2/H3 flavors.
9SiGe HBJT’s current and power gain 240 GHz Ft / 270 GHz Fmax devices in mass production.High frequency performances sustained for wide collector current range.
10SiGe HBJT’s gain vs DC power density TowerJazz Devices are optimized for low power consumption.
11SiGe HBJT’s NoiseSBC18H4 minimum noise figure at 20Ghz is measured less than 1dB and at 40GHz at only 2dB.NFMIN is flat across various frequency ranges.
12Circuit examples at ~100GHz: LNAs SBC18H3SBC18H2Broad band mm-wave LNAs fabricated in SBC18H2 and SBC18H34 identical LNAs built for a 4-channel W-band phased-array receiverNearly 30dB of gain above noise floor at 85GHzAlmost perfect matching between LNAs
13RF Grounding: Deep Silicon Vias vs. Through Silicon Vias ~10umMetal 1Backside Metallizationp++ handle waferp- Epiemittercollector~150umMetal 1Backside MetallizationThrough-Silicon Vias~100umDeep Silicon Vias and Through Silicon Vias are available for enhanced RF grounding.
14Bipolar Roadmapnext generation (SBC18H4) is in final development stage ,Fmax=350Ghz , improved noise figure.SiGe NPN on thick film SOI under development.
15SummaryTowerJazz offer SiGe HBJT devices on 0.35µm, 0.18µm and 0.13µm technology nodes.TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise.The SiGe HBJTs are embedded into complimentary BiCMOS platforms offering high performance RF, analog and digital performances.
17Complete SBC18H3 Device Roster FamilyDeviceCharacteristicsCMOS1.8V CMOSModel-exact copy of all other TJ 0.18um CMOS3.3V CMOSBipolarHS NPN240 GHz FT / 280 GHz FMAXSTD NPN55GHz FT / 3.2V BVCEOLPNPb=35ResistorsPoly235 W/sq and 1000 W/sqMetal25 W/sq TiN on M3CapacitorsSingle MIM2 or 2.8 fF/µm2Stacked MIM4 or 5.6 fF/µm2Varactors1.8V MOS20GHz = 20Hyper-abrupt junction20GHz =15, Tuning Ratio = 21%RF Diodesp-i-nIsolation <-15dB, Insertion loss > -3.5dB at 50GHzSchottkyFC > 800 GHz
18SiGe HBJT basic layout-122 configuration WNN+ for NsubSTISC ImplantSiGe-Based layerEWEmitter PolyCollectorEmitterBaseNative P-subAA, EPBPSCAREA2XNAAWNEWN+ for NsubSTISC ImplantSiGe-Based layerEmitter PolyCollectorEmitterBaseNative P-sub