Presentation is loading. Please wait.

Presentation is loading. Please wait.

Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials.

Published byAleah Crisp Modified over 9 years ago

Similar presentations

Presentation on theme: "Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials."— Presentation transcript:

1 Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials Technology Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Barbara Surma, and Mariusz Pawłowski Workshop on Defect Analysis in Radiation-Damaged Silicon Detectors, Vilnius, 2-3 June 2007 Institute of Electronic Materials Technology, 133 Wólczyńska Str. 01-919 Warszawa, Poland

2 Outline Samples HRPITS images of spectral fringes for radiation defects in neutron MCz silicon – effect on the neutron fluence on the defect structure of as-irradiated material Photoluminescence spectra Results of EPR measurements Conclusions

3 Samples Starting material: Okmetic MCz silicon wafers, n-type, 1 k  cm, 300  m thick [O] = 5.5x10 17 cm -3 [C] = 2.5x10 16 cm -3 Neutron irradiation: TRIGA reactor in Ljubljana, 1-MeV, fluences: 1x10 12, 1x10 13, 1x10 14, 3x10 14, 1x10 15, 3x10 15, 1x10 16, and 3x10 16 cm -2

4 Effect on neutron fluence on the material resistivity

5 HRPITS images (1) Laser: 650 nm, 5mW; U A = 3V;Gain: 1x10 6 V/A; Line width [samples]: 50000; Time Resolution [us]: 10 Period [ms]: 505; Average: 150; Illumination pulse width: 50 ms Trap label E a [meV] A [s -1 K -2 ] e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ] Amp e2 [a.u] Identification T1_1E12233(2-3)x10 4 1x10 3 0.223.2x10 4 0.40V 2 2-/-

6 HRPITS images (2) Trap labelE a [meV]A [s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]E 2 [s -1 ]Amp e2 [a.u]Identification T1_1E1325±2(2-5)x10 2 1x10 3 0.0483.2x10 4 0.41shallow donor T2_1E1330±2(3-6)x10 4 1x10 3 0.033.2x10 4 0.40shallow donor T3_1E13115±5(8-20)x10 5 1x10 3 0.123.2x10 4 0.46C i C s (B) -/0 or self-interstitials related T4_1E13315±10(2-4)x10 6 1x10 3 0.0183.2x10 4 0.091V 2 2-/- + C i O i 0/+ T5_1E13470±20(1-5)x10 7 1x10 3 0.0243.2x10 4 0.11V 2 -/0 + X -/0

7 HRPITS images (3) Trap labelE a [meV]A[s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]e 2 [s -1 ]Amp e2 [a.u]Identification T1_1E1424±2(1-5)x10 3 1x10 4 0.013.2x10 4 0.039shallow donor T2_1E1460±5(9-20)x10 4 1x10 4 0.0223.2x10 4 0.053C i C s (B) +/0 or self-interstitials related T3_1E14103±5(2-5)x10 3 1x10 3 0.043.2x10 4 0.37C i C s (B) -/0 or self-interstitials related T4_1E14324±10(1-5)x10 6 3.2x10 3 0.0333.2x10 4 0.125V 2 2-/- + C i O i 0/+ T5_1E14505±20(8-30)x10 7 1x10 3 0.0493.2x10 4 0.249V 2 -/0 + X -/0

8 HRPITS images (4) Trap labelE a [meV]A [s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]e 2 [s -1 ]Amp e2 [a.u]Identification T1_3E1439±3(1-5)x10 3 1x10 3 0.0143.2x10 4 0.19shallow donor T2_3E1462±5(9-20)x10 3 1x10 3 0.073.2x10 4 0.34C i C s (B) +/0 or self-interstitials related T3_3E14240±7(1-4)x10 7 1x10 3 0.063.2x10 4 0.23V 2 2-/- T4_3E14333±10(2-6)x10 6 1x10 3 0.093.2x10 4 0.25C i O i 0/+ T5_3E14490±20(6-9)x10 7 1x10 3 0.0443.2x10 4 0.25V 2 -/0 + X -/0

9 HRPITS images (5) Trap labelE a [meV]A [s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]e 2 [s -1 ]Amp e2 [a.u]Identification T1_1E1525±2(6-10)x10 4 1x10 4 0.013.2x10 4 0.016shallow donor T2_1E1560±5(1-5)x10 6 1x10 4 0.013.2x10 4 0.017C i C s (B) +/0 or self-interstitials related T3_1E1574±5(2-4)x10 4 1x10 3 0.0083.2x10 4 0.109self-interstitials related T4_1E15325±10(1-5)x10 7 3.2x10 3 0.0113.2x10 4 0.042V 2 2-/- + C i O i 0/+ T5_1E15420±20(1-3)x10 7 1x10 3 0.0473.2x10 4 0.218V 2 -/0

10 HRPITS images (6) Trap label E a [meV] A [s -1 K -2 ]e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ]Amp e2 [a.u]Identification T1_3E1543±2(2-4)x10 3 1x10 3 0.0223.2x10 4 0.11self-interstitials related T2_3E15325±10(1-5)x10 6 3.2x10 3 0.083.2x10 4 0.207V 2 2-/- + C i O i 0/+ T3_3E15500±20(3-8)x10 7 1x10 3 0.0833.2x10 4 0.247V 2 -/0 + X -/0

11 HRPITS images (7) Trap label E a [meV] A [s -1 K -2 ] e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ] Amp e2 [a.u] Identification T1_1E1641±3(1-3)x10 3 1x10 3 0.0223.2x10 4 0.109self-interstitials related T2_1E16325±10(1-5)x10 7 1x10 3 0.0393.2x10 4 0.141V 2 2-/- + C i O i 0/+ T3_1E16455±15(1-5)x10 7 1x10 3 0.1143.2x10 4 0.424V 2 -/0 + X -/0

12 HRPITS images (8) Trap label E a [meV] A [s -1 K -2 ] e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ] Amp e2 [a.u] Identification T1_3E1631±2(1-3)x10 3 1x10 3 0.013.2x10 4 0.061self-interstitials related T2_3E16320±10(1-5)x10 6 1x10 3 0.113.2x10 4 0.22V 2 2-/- + C i O i 0/+ T3_3E16420±15(5-9)x10 6 1x10 3 0.183.2x10 4 0.446V 2 -/0 + X -/0

13 Effect of neutron fluence on the concentration midgap centres and Fermi level position Effect of fluence on the concentration of midgap centres Effect of fluence on the Fermi level position determined from temperature dependence of dark current (TDDC)

14 Photoluminescence spectra (1)

15 Photoluminescence spectra (2)

16 Results of EPR measurements

17 Conclusions (1)

18 Conclusions (2)

19 Acknowledgement The authors want to thank Prof. Gunnar Lindstroem for his effort put into the coordination of research within the framework of the WODEAN project. We would like also to thank Gregor Kramberger for performing the neutron irradiations. This work was carried out within the framework of the RD 50 project with financial support of the Polish Ministry of Science and Higher Education under grant No. CERN/15/2007.

Download ppt "Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials."

Similar presentations

TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,

TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,
Eija Tuominen Siena 22.10.2002 TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON Helsinki Institute of Physics,

Eija Tuominen Siena TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON Helsinki Institute of Physics,
Eija Tuominen 26.09.2003 DEVELOPMENT OF RADIATION HARD DETECTORS Helsinki Institute of Physics (HIP) In close cooperation with: Microelectronics Centre,

Eija Tuominen DEVELOPMENT OF RADIATION HARD DETECTORS Helsinki Institute of Physics (HIP) In close cooperation with: Microelectronics Centre,
Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug. 23-24, 2006,

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,
1 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors Zheng Li 1, Rubi Gul 1, Jaakko Harkonen.

1 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors Zheng Li 1, Rubi Gul 1, Jaakko Harkonen.
1AIDA final meeting, CERN 9-11 December 2014 Vladimir Cindro, Jožef Stefan Institute Transnational access to TRIGA _Mark III reactor at Jožef Stefan Institute,

1AIDA final meeting, CERN 9-11 December 2014 Vladimir Cindro, Jožef Stefan Institute Transnational access to TRIGA _Mark III reactor at Jožef Stefan Institute,
Characterization of 150  m thick epitaxial silicon pad detectors from different producers after 24 GeV/c proton irradiation Herbert Hoedlmoser (1), Michael.

Characterization of 150  m thick epitaxial silicon pad detectors from different producers after 24 GeV/c proton irradiation Herbert Hoedlmoser (1), Michael.
TCT+, eTCT and I-DLTS measurement setups at the CERN SSD Lab

TCT+, eTCT and I-DLTS measurement setups at the CERN SSD Lab
Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments

Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments
FREE CARRIER ABSORPTION TECHNIQUES - MICROWAVE & IR –

FREE CARRIER ABSORPTION TECHNIQUES - MICROWAVE & IR –
On MCz SCSI after 24 GeV/c proton irradiation 12th RD50 Workshop Ljubljana, 2-4 June 2008 D. Creanza On behalf of the Bari and Pisa RD50 groups.

On MCz SCSI after 24 GeV/c proton irradiation 12th RD50 Workshop Ljubljana, 2-4 June 2008 D. Creanza On behalf of the Bari and Pisa RD50 groups.
1Ruđer Bošković Institute, Zagreb, Croatia

1Ruđer Bošković Institute, Zagreb, Croatia
21 st RD50 Workshop, 14-16 November 2012, CERN RD50 Simulation Parameters M.Moll, 21st RD50 Workshop, 14-16 November 2012 -1- TypeTransitionLevel  n [cm.

21 st RD50 Workshop, November 2012, CERN RD50 Simulation Parameters M.Moll, 21st RD50 Workshop, November TypeTransitionLevel  n [cm.
11 th RD50 Workshop, CERN 12-14 Nov. 2007 1 Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.

11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.
KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik www.kit.edu.

KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik
The contribution from The contribution from photoluminescence (PL) Gordon Davies, King’s College London.

The contribution from The contribution from photoluminescence (PL) Gordon Davies, King’s College London.
Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.

Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.
M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.

M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.
Fluence–dependent lifetime variations in neutron irradiated MCZ Si measured by microwave probed photoconductivity and dynamic grating techniques E.Gaubas,

Fluence–dependent lifetime variations in neutron irradiated MCZ Si measured by microwave probed photoconductivity and dynamic grating techniques E.Gaubas,
Gunnar Lindstroem – University of Hamburg1 G. Lindstroem a, E. Fretwurst a, F. Hönniger a, A. Junkes a, K. Koch a and I. Pintilie a,b a Institute for Exp.

Gunnar Lindstroem – University of Hamburg1 G. Lindstroem a, E. Fretwurst a, F. Hönniger a, A. Junkes a, K. Koch a and I. Pintilie a,b a Institute for Exp.

Similar presentations

Ads by Google