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Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials.

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Presentation on theme: "Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials."— Presentation transcript:

1 Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials Technology Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Barbara Surma, and Mariusz Pawłowski Workshop on Defect Analysis in Radiation-Damaged Silicon Detectors, Vilnius, 2-3 June 2007 Institute of Electronic Materials Technology, 133 Wólczyńska Str Warszawa, Poland

2 Outline Samples HRPITS images of spectral fringes for radiation defects in neutron MCz silicon – effect on the neutron fluence on the defect structure of as-irradiated material Photoluminescence spectra Results of EPR measurements Conclusions

3 Samples Starting material: Okmetic MCz silicon wafers, n-type, 1 k  cm, 300  m thick [O] = 5.5x10 17 cm -3 [C] = 2.5x10 16 cm -3 Neutron irradiation: TRIGA reactor in Ljubljana, 1-MeV, fluences: 1x10 12, 1x10 13, 1x10 14, 3x10 14, 1x10 15, 3x10 15, 1x10 16, and 3x10 16 cm -2

4 Effect on neutron fluence on the material resistivity

5 HRPITS images (1) Laser: 650 nm, 5mW; U A = 3V;Gain: 1x10 6 V/A; Line width [samples]: 50000; Time Resolution [us]: 10 Period [ms]: 505; Average: 150; Illumination pulse width: 50 ms Trap label E a [meV] A [s -1 K -2 ] e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ] Amp e2 [a.u] Identification T1_1E12233(2-3)x10 4 1x x V 2 2-/-

6 HRPITS images (2) Trap labelE a [meV]A [s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]E 2 [s -1 ]Amp e2 [a.u]Identification T1_1E1325±2(2-5)x10 2 1x x shallow donor T2_1E1330±2(3-6)x10 4 1x x shallow donor T3_1E13115±5(8-20)x10 5 1x x C i C s (B) -/0 or self-interstitials related T4_1E13315±10(2-4)x10 6 1x x V 2 2-/- + C i O i 0/+ T5_1E13470±20(1-5)x10 7 1x x V 2 -/0 + X -/0

7 HRPITS images (3) Trap labelE a [meV]A[s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]e 2 [s -1 ]Amp e2 [a.u]Identification T1_1E1424±2(1-5)x10 3 1x x shallow donor T2_1E1460±5(9-20)x10 4 1x x C i C s (B) +/0 or self-interstitials related T3_1E14103±5(2-5)x10 3 1x x C i C s (B) -/0 or self-interstitials related T4_1E14324±10(1-5)x x x V 2 2-/- + C i O i 0/+ T5_1E14505±20(8-30)x10 7 1x x V 2 -/0 + X -/0

8 HRPITS images (4) Trap labelE a [meV]A [s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]e 2 [s -1 ]Amp e2 [a.u]Identification T1_3E1439±3(1-5)x10 3 1x x shallow donor T2_3E1462±5(9-20)x10 3 1x x C i C s (B) +/0 or self-interstitials related T3_3E14240±7(1-4)x10 7 1x x V 2 2-/- T4_3E14333±10(2-6)x10 6 1x x C i O i 0/+ T5_3E14490±20(6-9)x10 7 1x x V 2 -/0 + X -/0

9 HRPITS images (5) Trap labelE a [meV]A [s -1 K -2 ]e 1 [s -1 ]Amp e1 [a.u]e 2 [s -1 ]Amp e2 [a.u]Identification T1_1E1525±2(6-10)x10 4 1x x shallow donor T2_1E1560±5(1-5)x10 6 1x x C i C s (B) +/0 or self-interstitials related T3_1E1574±5(2-4)x10 4 1x x self-interstitials related T4_1E15325±10(1-5)x x x V 2 2-/- + C i O i 0/+ T5_1E15420±20(1-3)x10 7 1x x V 2 -/0

10 HRPITS images (6) Trap label E a [meV] A [s -1 K -2 ]e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ]Amp e2 [a.u]Identification T1_3E1543±2(2-4)x10 3 1x x self-interstitials related T2_3E15325±10(1-5)x x x V 2 2-/- + C i O i 0/+ T3_3E15500±20(3-8)x10 7 1x x V 2 -/0 + X -/0

11 HRPITS images (7) Trap label E a [meV] A [s -1 K -2 ] e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ] Amp e2 [a.u] Identification T1_1E1641±3(1-3)x10 3 1x x self-interstitials related T2_1E16325±10(1-5)x10 7 1x x V 2 2-/- + C i O i 0/+ T3_1E16455±15(1-5)x10 7 1x x V 2 -/0 + X -/0

12 HRPITS images (8) Trap label E a [meV] A [s -1 K -2 ] e 1 [s -1 ] Amp e1 [a.u] e 2 [s -1 ] Amp e2 [a.u] Identification T1_3E1631±2(1-3)x10 3 1x x self-interstitials related T2_3E16320±10(1-5)x10 6 1x x V 2 2-/- + C i O i 0/+ T3_3E16420±15(5-9)x10 6 1x x V 2 -/0 + X -/0

13 Effect of neutron fluence on the concentration midgap centres and Fermi level position Effect of fluence on the concentration of midgap centres Effect of fluence on the Fermi level position determined from temperature dependence of dark current (TDDC)

14 Photoluminescence spectra (1)

15 Photoluminescence spectra (2)

16 Results of EPR measurements

17 Conclusions (1)

18 Conclusions (2)

19 Acknowledgement The authors want to thank Prof. Gunnar Lindstroem for his effort put into the coordination of research within the framework of the WODEAN project. We would like also to thank Gregor Kramberger for performing the neutron irradiations. This work was carried out within the framework of the RD 50 project with financial support of the Polish Ministry of Science and Higher Education under grant No. CERN/15/2007.


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