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Beam direction and flux measured by MUMON K. Matsuoka (Kyoto) for the MUMON group Contents: 1.Beam stability (direction/flux) 2.Absolute  beam flux.

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Presentation on theme: "Beam direction and flux measured by MUMON K. Matsuoka (Kyoto) for the MUMON group Contents: 1.Beam stability (direction/flux) 2.Absolute  beam flux."— Presentation transcript:

1 Beam direction and flux measured by MUMON K. Matsuoka (Kyoto) for the MUMON group Contents: 1.Beam stability (direction/flux) 2.Absolute  beam flux

2 Neutrino beam direction Measure ( ) beam direction by measuring muon profile center. (Another end is target) 1-mrad shift of the beam direction corresponds to 11.8-cm shift of the MUMON profile center. Requirement for MUMON: 3-cm=0.3mrad precision 2.5˚ Beam dump MUMON 295 km Target Horns p    118 m OTR Baffle

3 Basic Analysis method analysis has done by simple charge integration & 2D Gaussian fitting. for both online/offline analysis PedestalGate Silicon 80 mV for 3 x ppp wave form x 49 in some analysis, we also use total charge of 49 ch

4 Confirmation of Horn focusing 3 horns, 320 kA (shot# 47577), 2.16 x ppb, 6 bunch 1 st horn, 275 kA (shot# 47987), 2.10 x ppb, 6 bunch no horn, 0 kA (shot# 48704), 2.13 x ppb, 6 bunch peaksigmapeaksigma 1547 pC83 cm38.5 pC90 cm 467 pC95 cm13.2 pC104 cm 218 pC110 cm6.29 pC126 cm x2.1 x7.1

5 Stability of the beam direction Monitored the profile center obtained by the 2D Gaussian fit. During continuous 425 shots (Run: ) With 3 horns operation at 320 kA. Proton beam intensity (CT05): 2.15 x ppb x 6 bunches * 30-dB attenuators was used for the silicons.

6 Stability (fitted beam center) Chamber x RMS: 4.3 mmRMS: 3.0 mm Silicon x RMS: 1.9 mmRMS: 2.4 mm Silicon yChamber y Center values are different by ~1cm. Need check! (MUMON intrinsic fluctuation estimated by S/N is ***mm )

7 Stability (beam direction) (MUMON center)/(Dist.from target) No time dependent drift Beam direction was tuned well within 1 mrad. Monitor alignment should be checked. Further turning in Jan. Beam axis √ (x 2 + y 2 )

8 Stability (flux) incl. stability of beam+horn field+MUMON SiliconChamber RMS/Mean: 0.8%

9 Stability (flux) cont’d. CT normalized SiliconChamber RMS/Mean: 0.5% RMS/Mean: 0.50% 0.5% is same as the CT stability by Shibata-san stability of MUMON+(horn field) < 0.5% MUMON intrinsic fluctuation estimated by S/N is ***%

10 Stability (flux) incl. beam+horn field+MUMON No time dependent drift

11 Beam scan on the target Only horn-off data in Nov/Dec commissioning (1 st horn 273kA data in April/May commissioning) Scan w/ all horns will be in Jan/Feb. Opposite direction shift is expected. x target Proton beam were intended to shift in parallel. But angle change also existed

12 Beam scan on the target - Center position- MUMON alignment? Beam angle effect? (0.3mrad) Target alignment? SSEM18-19 alignment?

13 Beam scan on the target -Muon yield- Total Charge Peak charge Gap btw. Baffle and target? P beam  30mm  26mm baffle target Target center may be at -0.5~-1mm??

14 Absolute muon flux estimation Two methods in addition to the emulsion measurement A)Energy deposit calculation by MC.  Get the relation btw. muon flux and energy deposit in the detector B)Calibration by electron beam test Under study. Preliminary result is showing consistent result w/ A)

15 Estimation from MC energy deposit Energy deposit by all particles is summed up and divided by #muons Contrib. from  -rays generated outside detector and escape of  - rays generated inside detector are (automatically) taken into account E dep = 2420 MeV/(15266 muons) = keV/muon Ionization yield: Q = E dep / 3.6 eV x e 0 = =7.045 x 10 –3 pC/muon 2420 MeV Energy deposition in the silicon (MC) *Relying on estimation of  -ray contribution by Geant3. Bare Si measurement confirmed that the  -ray contribution is robust(~1% effect) against materials around.

16 Comparison w/ MC

17 Absolute muon beam flux Silicon (chamber) measurement is consistent w/ emulsion one. Muon flux measured by each detector at the center emulsion (10 4 /cm 2 ) Correction of the z- position diff. is applied. Cuts for emulsion analysis is applied (p > 0.05 GeV/c,  < x ppb [ 3 horns 320 kA ] IC data/MC: 0.87

18 Summary Horn focusing effect Beam direction Tuned within 1 mrad (and will be further tuned.) Less than 0.03mrad (rms) fluctuation Beam flux  <0.5% (RMS) fluctuation Target scan Horn-off data for target center determination Need more study to understand the obtained results Horn-on data will be taken in Jan./Feb. Absolute muon flux estimations and comparison w/ MC Agree with the emulsion measurement.

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20 Supplement

21 Stability of the proton beam Run: Cont. 6-bunch operation Inc. monitor stability Stability of CT: 0.5% (Shibata-san’s talk) RMS: 0.1 mm RMS: 0.2 mm RMS/Mean: 0.9%

22 Uji electron beam test 6-coil CT Electronics calibration factor inc. AMP: (4.053±0.004) x 10 –3 pC/ADC Pedestal RMS: 17.9 (for 120 samples)  pC uncertainty IC Electronics calibration factor: (4.158±0.002) x 10 –2 pC/ADC

23 Energy loss comparison (Uji/T2K) Energy loss in the chamber (Ar + 2% N 2, 131 kPa, 34˚C) by MC Uji 100-MeV electron beam: keV/electron (av. of all particles; , e) T2K beam at the center: 4.755/4.824/4.443 keV/muon (1 st horn 0/220/273 kA)  ± keV/muon (av. of all particles; , e,  ) Uji beam T2K beam

24 A-1. Chamber calibration CT gain was calibrated by Suzuki-san ± (out/input charge) IC/CT from the Uji electron beam test Correction of energy loss diff. between the electron beam and the T2K muon beam (16%).  IC calibration factor: (4.80 ±0.25 ) x 10 3 muon/cm 2 /pC IC/CT = 128.0±0.2

25 A-2. Silicon calibration Si/IC ratio from high intensity beam data (horn off) ±0.09 Correction of the z-position difference (8%) Beam density at each position is different due to beam divergence.  Silicon calibration factor: 154 ±9 muon/cm 2 /pC

26 Absolute muon flux (chamber) CT efficiency by calibration: ±  CT factor: (4.019 ±0.003 ) x 10 7 particle/pC IC/CT (Uji): ±0.2 (Ar + 2% N 2, 130 kPa, 29.7˚C)  Uji IC factor: (3.140 ±0.006 ) x 10 5 electron/pC  (3.120 ±0.006 ) x kPa, 34˚C Energy loss in MC (Ar + 2% N 2, 131 kPa, 34˚C) Uji 100-MeV electron beam: keV/electron (av. of all particles; , e) T2K beam at the center: ±0.231 keV/muon (av. of all particles; , e,  )  T2K IC factor (“collected charge” to “muon flux” conversion): (2.70 ±0.14 ) x 10 5 muon/pC = (4.80 ±0.25 ) x 10 3 muon/cm 2 /pC

27 Absolute muon flux (silicon - Si/IC) T2K IC factor: (4.80 ±0.25 ) x 10 3 muon/cm 2 /pC Charge ratio at the center Si/IC in data (run , horn 0 kA): ±0.09 (–15 dB Att. is not calibrated, assuming ) Beam size:  x,y Si ±0.1, ±0.1,  x,y IC ±0.6, ±0.4 cm Muon flux ratio at the center of Si/IC plane in MC 1 st horn 0 kA: ±0.017 sta (  x,y Si 170 ±4, 166 ±4,  x,y IC 174 ±5, 177 ±5 cm) 1 st horn 220 kA: ±0.015 sta (  x,y Si 157 ±3, 162 ±3,  x,y IC 161 ±3, 182 ±5 cm) 1 st horn 273 kA: ±0.013 sta (  x,y Si 128 ±2, 125 ±2,  x,y IC 133 ±2, 139 ±2 cm)  ±0.018±0.013 sta  Si factor: 4.80 x 10 3 / (33.89 / 1.084) = 154 ±9 muon/cm 2 /pC

28 Absolute muon flux (silicon - dE/dx) MC estimation of energy deposit in the silicon plane at the center with 1 st horn 273 kA: E loss = GeV/(15266 muon) = keV/muon Ionization yield: Q = E loss / 3.6 eV x e 0 = x 10 –3 pC/muon  Si factor: muon/ pC

29 Comparison between Si and emulsion Muon flux ratio at the center of Si/emulsion plane in MC 1 st horn 0 kA: ±0.018 sta (  x,y Si 170 ±4, 166 ±4,  x,y IC 177 ±5, 183 ±5 cm) 1 st horn 220 kA: ±0.016 sta (  x,y Si 157 ±3, 162 ±3,  x,y IC 165 ±4, 188 ±5 cm) 1 st horn 273 kA: ±0.014 sta (  x,y Si 128 ±2, 125 ±2,  x,y IC 136 ±2, 145 ±2 cm)  ±0.032±0.014 sta Muon reduction rate at Si by the cut for the emulsion analysis (momentum > 0.05 GeV/c, angle < 0.3 rad) by MC 1 st horn 0 kA: momentum cut 0.024%, angle cut 2.1% 1 st horn 220 kA: momentum cut 0.026%, angle cut 3.4% 1 st horn 273 kA: momentum cut 0.052%, angle cut 3.6 ±1.2 sta %  3.65 ±1.5±1.2 sta %

30 Absolute flux (summary table) Silicon (Si/IC)Silicon (dE/dx)Emulsionjnubeam 10a 1 st horn 0 kA 1.04 ± ± ± st horn 220 kA 1.70 ± ± ± st horn 273 kA 2.30 ± ± ±0.02 Muon flux measured by each detector at the center emulsion (10 4 /cm 2 ) Silicon (Si/IC)Silicon (dE/dx)Emulsion 1 st horn 0 kA st horn 220 kA st horn 273 kA Muon flux ratio of each detector to MC


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