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Electrónica Industrial Mestrado Energia e Automação Industrial Componentes electrónica potência Diode Thyristor Transistor MOSFET GTO IGBT uncontrolled.

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Presentation on theme: "Electrónica Industrial Mestrado Energia e Automação Industrial Componentes electrónica potência Diode Thyristor Transistor MOSFET GTO IGBT uncontrolled."— Presentation transcript:

1 Electrónica Industrial Mestrado Energia e Automação Industrial Componentes electrónica potência Diode Thyristor Transistor MOSFET GTO IGBT uncontrolled semi-controlled fully-controlled

2 Electrónica Industrial Mestrado Energia e Automação Industrial turn-on turn-off PUNCH-THROUGH (PT) better tradeoff between forward voltage drop and turn-off time NON-PUNCH-THROUGH (NPT) higher voltage capability (4kV) higher forward voltage drop more robust than PT Tecnologias de fabrico: 15V 0 - 7V 600, 1200, 1700 V (em off) A negative voltage bias is used to improve the IGBT immunity to collector-to-emitter dv/dt injected noise and reduce turn-off losses

3 Electrónica Industrial Mestrado Energia e Automação Industrial switching on-state power dissipation (not switching)

4 Electrónica Industrial Mestrado Energia e Automação Industrial (w/ inductive load)

5 Electrónica Industrial Mestrado Energia e Automação Industrial passive circuit elements have a tremendous influence on switching losses and operating areas

6 Electrónica Industrial Mestrado Energia e Automação Industrial

7 Electrónica Industrial Mestrado Energia e Automação Industrial P t negligível SOA (Safe Operating Area) depende de f SW SOA (SKM100GB123D)


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