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AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

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Presentation on theme: "AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)"— Presentation transcript:

1 AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A) MoW,AlNd Target,Kr Coater Photo Resist 15000A Photo Resist,NBA Stepper21mj/cm2 - Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36% ADI CD/Overlay:L1:14+-1um - Etch ICP Taper angle25+-10(MoW) ICP Taper angle30+-15(AlNd/MoW) He Stripper MoW:MEA,BDG:80 ℃.60sec+O3:200 ℃,60sec Al/Nd/MoW,BDG:80 ℃,60sec+IPA:23 ℃ Stripper(MEA30%),IPA OS/testerCriteria-

2 AU Optronics Corp. Pre Clean Brush(Detergent LH300) ->Rinse->MS->O3->CJ->Spin Dry

3 AU Optronics Corp. Sputter MoW:2350A AlNd/MoW(3000/500A)

4 AU Optronics Corp. Coater Photo Resist 15000A NBA 洗邊

5 AU Optronics Corp. Stepper 21mj/cm2

6 AU Optronics Corp. Developer Developer TMAH, Bake 130 ℃

7 AU Optronics Corp. Etch ICP Taper angle25+-10(MoW) ICP Taper angle30+-15(AlNd/MoW)

8 AU Optronics Corp. Stripper Stripper(Mea30%): MoW:MEA,BDG:80 ℃.60sec+O3:200 ℃,60sec Al/Nd/MoW,BDG:80 ℃,60sec+IPA:23 ℃

9 AU Optronics Corp. PEP2 ProcessConditionChemicals SiON Pre Clean Brush->Rinse->MS->CJ->Spin Dry Detergent LH300 SiON PECVD SiON:1750A N 2 O,N2,SiH4,NH3 4Layer PreClean Brush->Rinse->MS->CJ->Spin Dry Photo Resist,NBA 4Layer PECVDSiON/g-SiN/a-Si/IS-SiNx (1750/500/500/3300)+10secN2O treat 1.SiON:SiH4,N 2 O,N2 2. g-SiN:SiH4,NH3,N2 3.a-Si: SiH4.H2 4.IS-SiNx: SiH4,NH3,N2 CoaterPhoto Resist 15000APhoto Resist,NBA Stepper3500mj/cm2(Back side exposure) 21mj/cm2 - Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36% ADI Overlay:<=0.7um - Etch 0.6%DHF Stripper MEA,BDG:80 ℃.60sec+O3:200 ℃,60sec Stripper(MEA30%),IPA

10 AU Optronics Corp. SiON Pre Clean Brush(Detergent LH300) ->Rinse->MS->CJ->Spin Dry

11 AU Optronics Corp. SiON PECVD 1.SiON:1750A 2. 主沉積 :SiH4,N2O,N2,NH3

12 AU Optronics Corp. 4Layer PECVD - SiON SiON:1750A 1.SiON:1750A 2. 主沉積 :SiH4,N2O,N2

13 AU Optronics Corp. 4Layer PECVD - g-SiN SiON:1750A 1.g-SiN:500A 2. 主沉積 : SiH4.NH3,N2

14 AU Optronics Corp. 4Layer PECVD - a-Si SiON:1750A g-SiN:500A 1.a-Si:500A 2. 主沉積 : SiH4,H2

15 AU Optronics Corp. 4Layer PECVD - IS SiON:1750A g-SiN:500A 1.IS-SiNx: 500A 2. 主沉積 : SiH4,NH3,N2 a-Si:500A

16 AU Optronics Corp. Coater Photo Resist 15000A NBA 洗邊

17 AU Optronics Corp. Back side exposure 3500mj/cm2

18 AU Optronics Corp. Stepper 22mj/cm2

19 AU Optronics Corp. Developer Developer TMAH, Bake 130 ℃

20 AU Optronics Corp. Etch 0.6% DHF

21 AU Optronics Corp. Stripper Stripper(MEA30%): MEA,BDG:80 ℃.60sec+O3:200 ℃,60sec,IPA

22 AU Optronics Corp. PEP3 ProcessConditionChemicals N+ Pre Clean Rinse  LAL50  O3->MS->CJ- >Spin Dry Detergent LH300,LAL50,O3 PECVDN+-SiNx:500A+-20%SiH4,PH3,H2 M2 PreClean Rinse  LAL50  O3->MS->CJ- >Spin Dry Photo Resist,NBA SputterMo/Al/Mo(180/2500/500A)Mo Target,Al Target,Ar CoaterPhoto Resist 15000APhoto Resist,NBA Stepper28mj/cm2- Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36% ADIOverlay:<=0.7um- M2 EtchTaper angle °Al-Etch: HNO3,CH3COOH,H3PO4 3Layer Etch80% Over Etch 72~78secSF6,He,HCl,O2 Stripper MEA,BDG:80 ℃.60sec+IPA23 ℃,2 8sec Stripper(MEA30%),IPA

23 AU Optronics Corp. N+ Pre Clean Rinse  LAL50  O3->MS->CJ->Spin Dry

24 AU Optronics Corp. PECVD 1.N+-SiNx:500A+-20% 2. 主沉積 : SiH4,PH3,H2

25 AU Optronics Corp. M2 Pre Clean 1.N+-SiNx:500A+-20% 2. 主沉積 : SiH4,PH3,H2

26 AU Optronics Corp. Sputter Mo/Al/Mo(180/2500/500A) Mo Target,Al Target,Ar

27 AU Optronics Corp. Coater Photo Resist,NBA NBA 洗邊

28 AU Optronics Corp. Stepper Developer TMAH, Bake 130 ℃

29 AU Optronics Corp. Developer Developer TMAH, Bake 130 ℃

30 AU Optronics Corp. M2 Etch Taper angle ° Al-Etch: HNO3,CH3COOH,H3PO4

31 AU Optronics Corp. 3Layer N+,a-Si,g-SiN Dry Etch DryEtch:SF6,He,HCl,O2 80% Over Etch 72~78sec

32 AU Optronics Corp. Stripper Stripper(MEA30%): MEA,BDG:80 ℃,65sec+IPA 23 ℃,28sec

33 AU Optronics Corp. PEP4 ProcessConditionChemicals Pre Clean Rinse  MS->CJ->Spin Dry Detergent LH300 PECVDP-SiNx:2000A+-15%SiH4,NH3,N2 CoaterPhoto Resist APhoto Resist,NBA Stepper37mj/cm2- Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36% ADIOverlay:<=0.7um- EtchTaper angle °Al-Etch: HNO3,CH3COOH,H3PO4 Stripper MEA,BDG:80 ℃.65sec+IPA23 ℃,2 8sec Stripper(MEA30%),IPA

34 AU Optronics Corp. PV Pre Clean Rinse  MS->CJ->Spin Dry

35 AU Optronics Corp. PV PECVD 1.P-SiNx:P-SiNx:2000A+-15% 2. 主沉積 : SiH4,NH3,N2

36 AU Optronics Corp. Coater Photo Resist 30000A NBA 洗邊

37 AU Optronics Corp. Stepper

38 Developer Developer TMAH, Bake 130 ℃

39 AU Optronics Corp. Etch 5.7~8 BHF,32sec

40 AU Optronics Corp. Stripper

41 Stripper

42 ITO Oxalic acid

43 AU Optronics Corp. ITO

44 ITO

45 ITO


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