1. PEP1 Process Condition Chemicals Pre Clean Sputter Coater Stepper
Brush->Rinse->O3->MS->CJ->Spin Dry
Detergent LH300,O3
Sputter
MoW:2350A
AlNd/MoW(3000/500A)
MoW,AlNd Target,Kr
Coater
Photo Resist 15000A
Photo Resist,NBA
Stepper
21mj/cm2 -
Developer
Developer TMAH,Bake 130℃
Developer TMAH 2.36%
ADI
CD/Overlay:L1:14+-1um
Etch
ICP Taper angle25+-10(MoW)
ICP Taper angle30+-15(AlNd/MoW) He
Stripper
MoW:MEA,BDG:80℃.60sec+O3:200℃,60sec
Al/Nd/MoW,BDG:80℃,60sec+IPA:23℃
Stripper(MEA30%),IPA
OS/tester
Criteria

2. Pre Clean Brush(Detergent LH300)
->Rinse->MS->O3->CJ->Spin Dry

3. Sputter
MoW:2350A
AlNd/MoW(3000/500A)

4. Coater
Photo Resist 15000A
NBA洗邊

5. Stepper
21mj/cm2

6. Developer
Developer TMAH, Bake 130℃

7. Etch
ICP Taper angle25+-10(MoW)
ICP Taper angle30+-15(AlNd/MoW)

8. Stripper Stripper(Mea30%): MoW:MEA,BDG:80℃.60sec+O3:200℃,60sec
Al/Nd/MoW,BDG:80℃,60sec+IPA:23℃

9. PEP2 Process Condition Chemicals SiON Pre Clean Detergent LH300
Brush->Rinse->MS->CJ->Spin Dry
Detergent LH300
SiON PECVD
SiON:1750A
N2O,N2,SiH4,NH3
4Layer PreClean
Photo Resist,NBA
4Layer PECVD
SiON/g-SiN/a-Si/IS-SiNx
(1750/500/500/3300)+10secN2O treat
1.SiON:SiH4,N2O,N2
2. g-SiN:SiH4,NH3,N2
3.a-Si: SiH4.H2
4.IS-SiNx: SiH4,NH3,N2
Coater
Photo Resist 15000A
Stepper
3500mj/cm2(Back side exposure)
21mj/cm2 -
Developer
Developer TMAH,Bake 130℃
Developer TMAH 2.36%
ADI
Overlay:<=0.7um
Etch
0.6%DHF
Stripper
MEA,BDG:80℃.60sec+O3:200℃,60sec
Stripper(MEA30%),IPA

10. SiON Pre Clean Brush(Detergent LH300)
->Rinse->MS->CJ->Spin Dry

11. SiON PECVD
1.SiON:1750A
2.主沉積:SiH4,N2O,N2,NH3

12. 4Layer PECVD - SiON
SiON:1750A
1.SiON:1750A
2.主沉積:SiH4,N2O,N2

13. 4Layer PECVD - g-SiN 1.g-SiN:500A 2.主沉積: SiH4.NH3,N2 SiON:1750A

14. 4Layer PECVD - a-Si 1.a-Si:500A 2.主沉積: SiH4,H2 SiON:1750A SiON:1750A
g-SiN:500A

15. 4Layer PECVD - IS 1.IS-SiNx: 500A 2.主沉積: SiH4,NH3,N2 SiON:1750A
g-SiN:500A
a-Si:500A

16. Coater
Photo Resist 15000A
NBA洗邊

17. Back side exposure
3500mj/cm2

18. Stepper
22mj/cm2

19. Developer
Developer TMAH, Bake 130℃

20. Etch
0.6% DHF

21. Stripper
Stripper(MEA30%):
MEA,BDG:80℃.60sec+O3:200℃,60sec,IPA

22. PEP3 Process Condition Chemicals N+ Pre Clean
RinseLAL50O3->MS->CJ->Spin Dry
Detergent LH300,LAL50,O3
PECVD
N+-SiNx:500A+-20%
SiH4,PH3,H2
M2 PreClean
Photo Resist,NBA
Sputter
Mo/Al/Mo(180/2500/500A)
Mo Target,Al Target,Ar
Coater
Photo Resist 15000A
Stepper
28mj/cm2 -
Developer
Developer TMAH,Bake 130℃
Developer TMAH 2.36%
ADI
Overlay:<=0.7um
M2 Etch
Taper angle °
Al-Etch:
HNO3,CH3COOH,H3PO4
3Layer Etch
80% Over Etch 72~78sec
SF6,He,HCl,O2
Stripper
MEA,BDG:80℃.60sec+IPA23℃,28sec
Stripper(MEA30%),IPA

23. N+ Pre Clean
RinseLAL50O3->MS->CJ->Spin Dry

24. PECVD
1.N+-SiNx:500A+-20%
2.主沉積: SiH4,PH3,H2

25. M2 Pre Clean
1.N+-SiNx:500A+-20%
2.主沉積: SiH4,PH3,H2

26. Sputter
Mo/Al/Mo(180/2500/500A)
Mo Target,Al Target,Ar

27. Coater
Photo Resist,NBA
NBA洗邊

28. Stepper
Developer TMAH, Bake 130℃

29. Developer
Developer TMAH, Bake 130℃

30. M2 Etch
Taper angle °
Al-Etch:
HNO3,CH3COOH,H3PO4

31. 3Layer N+,a-Si,g-SiN Dry Etch
DryEtch:SF6,He,HCl,O2
80% Over Etch 72~78sec

32. Stripper
Stripper(MEA30%):
MEA,BDG:80℃,65sec+IPA 23℃,28sec

33. PEP4 Process Condition Chemicals Pre Clean
RinseMS->CJ->Spin Dry
Detergent LH300
PECVD
P-SiNx:2000A+-15%
SiH4,NH3,N2
Coater
Photo Resist A
Photo Resist,NBA
Stepper
37mj/cm2 -
Developer
Developer TMAH,Bake 130℃
Developer TMAH 2.36%
ADI
Overlay:<=0.7um
Etch
Taper angle °
Al-Etch:
HNO3,CH3COOH,H3PO4
Stripper
MEA,BDG:80℃.65sec+IPA23℃,28sec
Stripper(MEA30%),IPA

34. PV Pre Clean
RinseMS->CJ->Spin Dry

35. PV PECVD
1.P-SiNx:P-SiNx:2000A+-15%
2.主沉積: SiH4,NH3,N2

36. Coater
Photo Resist 30000A
NBA洗邊

37. Stepper

38. Developer
Developer TMAH, Bake 130℃

39. Etch
5.7~8 BHF,32sec

40. Stripper

41. Stripper

42. ITO
Oxalic acid

43. ITO

44. ITO

45. ITO