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1 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_8 22-25 juin 2008 100 tons of LAr (Liquid Argon) Detectors T2K (Tokai.

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Presentation on theme: "1 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_8 22-25 juin 2008 100 tons of LAr (Liquid Argon) Detectors T2K (Tokai."— Presentation transcript:

1 1 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin tons of LAr (Liquid Argon) Detectors T2K (Tokai 2 Kamiokande) (2km from accelerator) R&D for liquid Argon TPC detectors for Neutrino and astroparticle experiments  m 100 ktons Liquid Argon TPC (Time Projection Chamber) for Astro particle Physics T2K second phase CP violation? LAGUNA: proton decay 2020 ? T2K phase II, LAGUNA, 100 Ktons LAr, channels or more 2km 295kmX00km DateSept 2007July 2008Sept 2008Feb ? VersionPATOPTOPEST Nb of channel388*8= channels10 k channels100k channels Test siteIPNL CERN280m2kmX00 km Detector weight1 ton100 tons100 ktons

2 2 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Electronic choices due to the detector principle Detection with a system of wires of primary ionization drifted in ultra-pure LAr by induction or collection, at minimum ~ electrons per channel No charge amplification at the level of the detector  low noise preamp 400 ns sampling to reconstruct the drift time and the amount of charge 3D image reconstruction with several planes of wires + drift time Multichannel 3fC to 120fC (0.5μs pulse) pre-amplifier 1000 e- ENC with 250pF Detector capacitance Able to work in LAr -150°C with very few power dissipation e QE

3 3 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Test setup in Liquid Nitrogen 77K 8100μ/0.35μ input transistor T1.4 supplied by 10 mA In-between phase margin compensation φ margin Schematic ENC : (e - )Without shaper temp φ M lay φ M Sch 2M_ENC20M_ENCPure_ENC ,985,5654,8906,6259, ,5186,451,14E+031,36E+03414, ,987,791,77E+031,84E+03695, ,4688,582,10E+032,07E+03874,7 3079,8289,132,34E+032,23E+031,01E+03 C pa (A+1) CDCD Q noise -A Q in en V in V noise en C inj V out C pa R pa C D 250pF Detector H τ= [20ns - 1  s] Pre-Amplifier -A external shaper Equivalence without R pa

4 4 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Inside PATOP test chip 350Ω : compensation resistance 5pF : compensation capacitance 1/81 pattern of the input trans. Half of the cascode trans.

5 5 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Two Test chip versions AMS 0.35µ TOPEST expected for mid-july 2008 PAshaper buffer biasing circuit PATOP received in October 2007

6 6 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Test setup in Liquid Nitrogen 77K

7 7 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Typical 3fC input charge signal Vpeak Vnoise C pa R pa C D 250pF H τ= [5ns - 1  s] Pre-Amplifier -A external shaper,q=

8 8 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Performances for various temperatures Vpeak Vnoise ENC 2MΩ 20MΩ Shaping time [5ns-1000ns] - Ambient ~30°C - Vapour~ -110°C - LN2 : 77K H τ= [5ns - 1  s] external shaper C pa (A+1) CDCD Q noise -A-A Q in en V in V noise en C inj V out

9 9 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Powered with 3V battery supply No more noise (sdev) increasing for 20MΩ channel, its shows a lack of power supply decoupling. - Ambient ~30°C - LN2 : 77K Vpeak Vnoise ENC

10 10 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Noise performance in temperature The noise target that we expect is 1000 e-, considering an input capacitance of 250pF Due to decoupling weakness, the ENC is not as low as expected. –Theoretical vs. Experimental ENC table for various temperature with or without shaper for 2MΩ and 20MΩ channels

11 11 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Resistance for various temperature Rpolyhc 2MΩ ambiant to -196°CRpoly2 350Ω ambiant to -196°C Measured Using a QuadTech 7600 RLC meter

12 12 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Threshold voltage NMOS Wtot=199.8μ, L=0.7μ, ngate=9 -200°C -75°C +25°C Vth PMOS Wtot=100μ, L=0.35μ, ngate=10

13 13 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 members LAr R&D electronics IPNL for T2K and Astroparticle Physics : –D. Autiero, E. Bechetoille, B.Carlus, S. Gardien, C.Girerd, J. Marteau, H.Mathez In collaboration with ETHZ and Bern groups Thank you !

14 14 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Appendix

15 15 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 SMD Capacitances mounted on PCB +30°C; -110°C; °C Power supply Decoupling : 10μF X5R oxyde Substitute detector capacitance : 250pF COG oxyde

16 16 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Quadtech RLC measures of SMD tested in LN2

17 17 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 Dynamic measures PMOS test from 0 to 3.3 => starts with high current NMOS test from 0 to 3.3  starts with small currents  Progressive warming Measures last ⋍ 2 minutes

18 18 Edouard BECHETOILLE, IPNL,CNRS, FRANCE Edouard BECHETOILLE, IPNL,CNRS, FRANCE WOLTE_ juin 2008 ENC as a function of Cdet ENC = * Cdet; 2M_30_0u ENC = * Cdet; 2M_-100_0u ENC = * Cdet; 2M_-200_0u ENC = * Cdet; 20M_30_1u ENC = * Cdet; 20M_-100_1u ENC = * Cdet; 20M_-200_1u ENC = * Cdet; 20M_30_0u ENC = * Cdet; 20M_-100_0u ENC = * Cdet; 20M_-200_0u ENC = * Cdet; 2M_30_1u ENC = * Cdet; 2M_-100_1u ENC = * Cdet; 2M_-200_1u


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