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HV MOSFET Modeling with HiSIM_HV Benchmarks and New Developments Ehrenfried Seebacher, Mitiko Muira Matausch, Kund Molnar 2011-09-16 Hiroshima University.

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Presentation on theme: "HV MOSFET Modeling with HiSIM_HV Benchmarks and New Developments Ehrenfried Seebacher, Mitiko Muira Matausch, Kund Molnar 2011-09-16 Hiroshima University."— Presentation transcript:

1 HV MOSFET Modeling with HiSIM_HV Benchmarks and New Developments Ehrenfried Seebacher, Mitiko Muira Matausch, Kund Molnar Hiroshima University

2 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. 2 HV Transistor Compact Modeling Requirements HV transistor sub-circuit modeling (the reference) State of the art HV Transistor Compact Models HiSIM_HV 1.x and 2.x Benchmarking: DC, AC Summary Presentation Overview Hiroshima University &

3 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. FOMs for HV Transistor Modeling RON (On Resistor) (high vgs, low vds, and temp.) IDSAT (Saturation Current) ? VT long & short Cgg & Cgd Miller Cap Analog parameter for long channel length RF Parameter FT, FMAX ? 3 Model should at least demonstrate Process spec as good as possible Hiroshima University &

4 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. HV CMOS Transistor Types 4 Small on-resistance and high BV are contrary effects. The optimization of the tradeoff between both quantities is of major interest. The gate length is extended beyond the body-drain well junction, which increases the junction BV. The gate acts as a field plate to bends the electric field. RESURFeffect Quasi-Saturation Effect. Increased junction breakdown voltage (BV) of the drain diffusion is achieved by using a deep drain well PWELL NWELL Nwell Hiroshima University &

5 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Sub-circuit Modeling 5 Hiroshima University &

6 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Sub-circuit Model Features and Limitations HV MOS Transistor Model Features: Basic geometrical and process-related aspects such as oxide thickness, junction depth, effective channel length and width RON modeling Quasi saturation region and the saturation region Geometry scaling, Short-channel effects 1/f and thermal noise equation Temperature Modeling for RON, VT, IDSAT High Voltage Parasitic Models Bulk (Substrate) current Effects of doping profiles, substrate effect Modeling of weak, moderate and strong inversion behavior Parasitic bipolar junction transistor (BJT). Model Limitations: RF modeling SH modeling Cgd, Cgg …… Graded channel Impact ionization in the drift region High-side switch (sub-circuit extension needed). 6 Hiroshima University &

7 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. State of the Art HV Compact Models and new Developments EKV HV Transistor –Under development within the EU Project COMON “A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET” Antonios Bazigos, François Krummenacher, Jean-Michel Sallese, Matthias Bucher, Ehrenfried Seebacher, Werner Posch, Kund Molnár, and Mingchun Tang PSP HV – Transistor Model –In development based on PSP surface potential model MM20 –asymmetrical, surface-potential-based LDMOS model, developed by NXP Research HiSIM_HV –CMC Standard model version and –Version in evaluation 7 Hiroshima University &

8 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Application Range: a few volts ~ a few hundred volts Device Structure: extension of conventional MOSFETs Wide Possible Applications: freedom for circuit design Power MOSFET 8 Hiroshima University &

9 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Channel-Length Modulation Overlap Capacitance Beyond Gradual-Channel Approximation Complete Surface-Potential-Based Model  S0 : at source edge  SL : at the end of the gradual-channel approx.  S(  L) : at drain edge (calculated from  SL ) Extension of Bulk-MOSFET Model HiSIM2 Hiroshima University &

10 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. HiSIM-HV (Asymmetric)(Symmetric) a few hundred volts > Bias Range > a few volts V gs,eff = V gs – I ds x R s V ds,eff = V ds – I ds x (R s + R drift ) V bs,eff = V bs – I ds x R s potential drop Hiroshima University &

11 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Consistent Modeling in Drift Region 11 Hiroshima University & Y. Oritsuki et al., IEEE TED, 57, p. 2671, L drift N drift V DDP Potential drop in the drift region V ds Y. Oritsuki et al., IEEE TED, 57, p. 2671, 2010.

12 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. HiSIM reproduces  S(  L) calculated by 2D-device simulator. : potential determining LDMOS characteristics  S(  L)  S(  L) [V]  S(  L)  S(  L) [V] V gs [V] V ds [V] Key Potential Values 12 V DDP HV Hiroshima University &

13 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Modeling of R drift HiSIM_HV Series Bias Dependence is modeled based on principle. Y. Oritsuki et al., IEEE TED, 57, p. 2671, Hiroshima University &

14 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Quasi-saturation behavior of LDMOS is reproduced. : 2D-Device Simulation Results : HiSIM-HV Results I d [A] V gs =2.5V V gs =5V V gs =7.5V V gs =10V g d [S] Accuracy Comparison of I ds -V ds 14 Hiroshima University &

15 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Relatively Low Breakdown Voltage Relatively High Breakdown Voltage Current-Voltage Characteristics Hiroshima University &

16 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Empirical Model: Issues Care must be taken when adjusting critical parameters describing the Vgs dependence. Ids - Vgs Gm vs. Vgs Hiroshima University &

17 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. 17 Model Benchmark Output Characteristic HiSIM_HV v. BSIM3v3 Subcircuit Hiroshima University &

18 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Capacitance-Voltage Characteristics Capacitance [fF] V gs [V] V gs [V] Capacitance [fF] C gb C gg C gd C gs V ds =0V Asymmetrical LDMOS Symmetrical HVMOS Normal MOSFET Hiroshima University &

19 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. 19 AC Modeling: Cgg BSIM3+JFETS Subckt. HiSIM_HV Subcircuit: bad fitting quality, especially in accumulation. HiSIM_HV: good fitting quality in all regions. Hiroshima University &

20 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Self-Heating Effect for DC Analysis Hiroshima University &

21 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. RC-Network: Self-Heating Effect for AC Analysis Hiroshima University &

22 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. 22 Modeling R drift HiSIM_HV Series MOSFET + Resistor MOSFET Resistor DP Channel Hiroshima University &

23 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Node potential V ddp is solved iteratively. Hiroshima University &

24 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Velocity saturation affects strongly on I-V characteristics. 2D-Device Simulation 24 V DDP I ddp I-V Characteristics of Resistor Hiroshima University &

25 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. W0W0 W junc W dep x ov L over D junc x dep x junc x dep D junc A : junction depth : current exude coefficient into depletion region V ddp 25 Modeling Current-Flow in Overlap Region Hiroshima University &

26 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. 26 Drift-Resistance Model: New Physical Model in ver Old empirical model: still available (CORDRIFT=0) New physical model (CORDRIFT=1) : drift-current in the drift region: X ov is the effective depth of the drift region: W 0 : un-modulated drift region depth W dep : depth limitation due to Φ S W junc : depth limitation due to substrate/drift junction (high-side switch effect) W dep and W junc are a functions of NOVER NOVER is the impurity concentration in the drift-region affecting both DC and CV. Hiroshima University &

27 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. I d [mA] V ds [V] x ov improvements V gs = 3~9V, 15V, 30V V gs [V] 2D-Device Sim. HiSIM_HV I d [mA] V ds [V] V ds = 0.5V, 2V, 5V, 10~30V V gs [V] I d [mA] (L ch = 1  m, L over = 1  m, D junc = 2  m) Verification of I-V Characteristics V ds = 0.5V, 2V, 5V, 10~30V V gs = 3~9V, 15V, 30V I d [mA] The x ov model enables to fit I-V characteristics for wide range of bias conditions. 27 V ds = 0.5V, 2V, 5V, 10~30V V gs = 3~9V, 15V, 30V Hiroshima University &

28 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Empirical Model vs. Physical Model: IdVg Ids - Vgs Gm vs. Vgs HiSIM_HV 1.x.x Old Empirical HiSIM_HV 2.x.x New Physical Hiroshima University &

29 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Empirical Model vs. Physical Model: IdVd Hiroshima University & HiSIM_HV 1.x.x Old EmpiricalHiSIM_HV 2.x.x New Physical

30 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. HiSIM_HV Release Hiroshima University &

31 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. The Extreme Case; 120V Transistors 31 HV NMOS output and transfer characteristic of a typical wafer. W/L=40/0.5, VGS= 2.9, 4.8, 6.7, 8.6, 10.5, 12.4, 14.3, 16.2, 18.1, 20 V, VBS=0 V. & VBS= 0, -1, -2, -3, -4 V, VDS=0.1 V. + = measured, full lines= BSIM3v3 model; dashed lines = HiSIM_HV Hiroshima University & HiSIM_HV v. BSIM3 sub-circuit

32 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. 32 Isolated HVMOS: High-Side Switch Modeling - HVMOS used on the low-side of a load: Source and Substrate hold at the same potential - HVMOS used on the high-side of a load: Both Source and Drain can be placed at high potential => Ron is changing with V sub-s Vsub=0 Vsub=-120V Transfer Characteristics Vd=0.1V, Vs=Vb=0 HiSIM_HV 1.2.1: Vsub modulates the effective depth of the drift region: Rdrift(V sub,s ) Hiroshima University &

33 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. HiSIM_HV The following effects are also included: Depletion effect of the gate polycrystalline silicon (poly-Si). Quantum mechanical CLM Narrow channel STI Leakage currents (gate, substrate and gate-induced drain leakage (GIDL) currents). Source/bulk and drain/bulk diode models. Noise models (1/f, thermal noise, induced gate noise). Non-quasi static (NQS) model. 33 Complete Surface potential-based : HiSIM_HV solves the Poisson equation along the MOSFET channel iteratively, including the resistance effect in the drift region. high flexibility 20 model flags scales with the gate width, the gate length, the number of gate fingers and the drift region length. In addition, HiSIM_HV is capable of modeling symmetric and asymmetric HV devices. Hiroshima University &

34 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. Summary Decision for HV Model depends very much on the application Sub-circuit approach is very flexible and usable for switching applications and for analog applications using large transistors sizes. HiSIM_HV and shows high accuracy for all benchmarks. Detailed know how in parameter extraction needed Extensive measurements necessary. HiSIM_HV 2.x First Version New physical drift region model is under evaluation and shows excellent benchmark results. 34

35 © 2011 austriamicrosystems All rights reserved. ©2011 · austriamicrosystems AG.Material may not be reproduced without written approval of austriamicrosystems and may only be used for noncommercial educational purposes at the “University of Technology Graz”. - analog experts to help you leap ahead


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