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Influence of gate capacitance on CNTFET performance using Monte Carlo simulation H. Cazin d'Honincthun, S. Retailleau, A. Bournel, P. Dollfus, J.P. Bourgoin*

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Presentation on theme: "Influence of gate capacitance on CNTFET performance using Monte Carlo simulation H. Cazin d'Honincthun, S. Retailleau, A. Bournel, P. Dollfus, J.P. Bourgoin*"— Presentation transcript:

1 Influence of gate capacitance on CNTFET performance using Monte Carlo simulation H. Cazin d'Honincthun, S. Retailleau, A. Bournel, P. Dollfus, J.P. Bourgoin* UPS Institut d'Electronique Fondamentale (IEF) UMR 8622 – CNRS-Université Paris Sud 11, Orsay, France *Laboratoire d’électronique moléculaire, CEA/DSM/DRECAM/SPEC, CEA Saclay, France

2 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Plan  Carbon nanotubes: high potential material  Carbon nanotubes: Model for calculations (Monte Carlo)  Evaluation of Mean Free Path  Carbon nanotube field effect transistor simulation

3 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Potentialities of Carbon nanotubes Charge transport and confinement Charge transport is quasi-ballistic: few interactions Charge confinement (1D): good control of electrostatics Band structure « quasi » symmetric Transport properties identical for electron and hole (same m*) Carbon nanotubes can be either metallic as well as semi-conducting All-nanotube-based electronic is possible No dangling bonds Possibility to use High K material for oxide

4 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Plan  Carbon nanotubes: high potential material  Carbon nanotubes: Model for calculations (Monte Carlo)  Evaluation of Mean Free Path  Carbon nanotube field effect transistor simulation

5 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Particle Monte-Carlo method Carrier trajectories: Succession of free flight and scattering events Study of carrier transport in this work: solving the Boltzmann equation by the Monte Carlo method electron Statistical solution :by Monte Carlo method  assembly of individual particles 1 particle  N particles allow us to reconstruct scattering rates - time of free flights t f - type of scattering i - effect of scattering (  E,  ) (Monte Carlo algorithm) random selection of

6 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Band structure and phonons  E 12 E G /2 subbands 1 subbands 2 subbands 3 Energy dispersion calculated by: Tight-binding Zone-folding Phonon dispersion curves calculated by zone folding method Analytical approximation of dispersion curves [Pennington, Phys. Rev. B 68, (2003)]  Longitudinal acoustic and optical modes are considered as dominant like in graphene Analytical approximation of the three first subbands Analytical approximation of the three first subbands Approximation + RBM phonon (E RBM ≈ Cst./d t ) [M. Machon et al., Phys. Rev. B 71, , (2005)] Ex: Tube index n=19, E RBM =19 meV

7 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Scattering Events Calculation  Scattering rates : 1st order Perturbation Theory by deformation potential model with: D aco = 9 eV [L. Yang, M.P. Anantram et al. Phys. Rev. B 60, (1999) ] D RBM = 0.65eV/cm (for n = 19) [M. Machon et al., PRB 71, (2005)]  Intrasubband acoustic scattering Elastic process  Intersubband transition Inelastic process intravalley scattering from subband 1intervalley scattering from subband 1 n = 19

8 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Plan  Carbon nanotubes: high potential material  Carbon nanotubes: Model for calculations (Monte Carlo)  Evaluation of Mean Free Path  Carbon nanotube field effect transistor simulation

9 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Mean Free Path The mean free path depends on diameter and electric field :  l MFP = nm for elastic scattering  l MFP = nm for inelastic scattering Agreement with experimental works (L. field: nm H. Field: nm) Potential of quasi-ballistic transport in the low-field regime Simulation in steady-state regime

10 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Plan  Carbon nanotubes: high potential material  Carbon nanotubes: Model for calculations (Monte Carlo)  Evaluation of Mean Free Path  Carbon nanotube field effect transistor simulation

11 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS The modelled transistor Coaxially gated carbon nanotube transistor with heavily-doped source drain extensions CNTFET Characteristics: Zigzag tube (19,0) - d t = 1.5nm – E G = 0.55eV Cylindrically gated Ohmics Contacts (heavily n-doped) Intrinsic channel High K gate insulator HfO 2 ( EOT = 16, 1.4, 0.4, 0.1 nm - C OX = 72, 210, 560,1060 pF/m ) L c = 100 nm L = 20 nm e t = 0.18 nm d t = 1.5 nm EOT (nm) Oxide : HfO 2 SD N D = /m

12 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Conduction band First subband energy profile Weak field in the channel due to strong electrostatic gate control Weak field in the channel quasi ballistic transport

13 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Capacitive effects Determination of C G for low V DS : ≈ C G tends towards 4pF/cm Evolution of C ox and C G as a function of 1/EOT Reminder : C G leads towards C Q for C ox >> C Q For C ox >> C Q quantum capacitance limit Weak Field 1D low density of states Channel potential is fixed

14 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS I D -V GS Characteristics Expected result : I D increases with oxide capacitance C ox but limited enhancement for high C OX values Expected result : I D increases with oxide capacitance C ox but limited enhancement for high C OX values

15 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Evaluation of Ballistic Transport Unstrained Si. DG- MOSFET vs c-CNTFET CNTFET : 70% of ballistic electrons at the drain end for L ch = 100nm Unstrained Si DG : 50% of ballistic electrons pour L ch = 15 nm CNTFET : 70% of ballistic electrons at the drain end for L ch = 100nm Unstrained Si DG : 50% of ballistic electrons pour L ch = 15 nm

16 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS I D -V DS characteristics I ON ≈ 10 – 30 µA. I ON / I OFF ≈ – C OX (pF/m) /EOT(nm) 210/ / / 0.1 Expe.* 1.5 S (mV/dec) I ON (µA) g m (µS) High values of S and g m are obtained Acceptable agreement with experiments High values of S and g m are obtained Acceptable agreement with experiments Device parameters extracted from simulation (I off =0.1nA) * H. Dai, Nano Letter, vol.5, 345, (2005) : L=80nm, EOT=1.5nm V DD = 0.4V

17 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS I ON /I OFF ratio (V DD ) * H. Dai, Nano Letter, vol.5, 345, (2005) : L=80nm, EOT=1.5nm Performances CNT for L C =100nm and V DD <0.4V Performances Si for L C =15nm and V DD >0.7V Performances CNT for L C =100nm and V DD <0.4V Performances Si for L C =15nm and V DD >0.7V

18 Hugues Cazin d’Honincthun – URSI - 20/03/2007 UPS Conclusion This Monte Carlo simulation of a CNTFET shows excellent performances: Excellent electrostatic gate control (quantum capacitance regime) High fraction of ballistic electrons in the transistor channel High performances at relatively low power supply


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