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A.A. Baski, SMCSV 2002, Generic process for forming nanogrooves on a clean and “near-flat” plane of any crystal Time lapse for Si(112),

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Presentation on theme: "A.A. Baski, SMCSV 2002, Generic process for forming nanogrooves on a clean and “near-flat” plane of any crystal Time lapse for Si(112),"— Presentation transcript:

1 A.A. Baski, SMCSV 2002, Generic process for forming nanogrooves on a clean and “near-flat” plane of any crystal Time lapse for Si(112), 5º south of (5 5 12) (1 1 2)Si w/0.94 nm pitch Textured Atomic Ridges, “TAR” (1 1 2)Si after oblique Ga evaporation and RIBE (Reactive Ion Beam Etching) (1 1 2) Si with Strongly Textured Atomic Ridges, “STAR”

2 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

3 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

4 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

5 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

6 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

7 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

8 A.A. Baski, SMCSV 2002, MBE Oblique Evaporation

9 A.A. Baski, SMCSV 2002,

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13 Si(114) after grooves formed (similar to the (112) of previous process) with inserted C 60 molecules for high temperature superconductors. Also DNA or C-nanotubes for MOS sensors.


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