Presentation on theme: "V. Re 1 INFN WP3 Microelectronics and interconnection technology WP3 AIDA meeting, CERN, May 19, 2010 Valerio Re - INFN."— Presentation transcript:
V. Re 1 INFN WP3 Microelectronics and interconnection technology WP3 AIDA meeting, CERN, May 19, 2010 Valerio Re - INFN
V. Re 2 INFN WP3 participants Task 2 (3D interconnection): Participants: INFN Genova, Lecce, Milano, Padova, Pavia, Pisa Task 3 (Shareable IP blocks for HEP): Associates: Milano, Pavia The WP3 INFN groups are already involved in the development of advanced pixel sensors for ATLAS IBL, CMS, SuperB and ILC. Moreover, in 2009 the 3-year INFN VIPIX project was started with the goal of investigating vertically integrated pixel sensors and electronics.
V. Re 3 Task 2 (3D interconnection) Whereas VIPIX is presently focused on the development of 3D Monolithic Active Pixel Sensors in the Tezzaron/Chartered process, the INFN participation to AIDA-WP3 will have the goal of investigating a vertical interconnection technology between a high-resistivity, fully-depleted silicon sensor and a readout chip. For the sensor part, INFN is planning to study the compatibility of active-edge 3D and planar pixel detectors from FBK-IRST with the vertical interconnection processes that will be evaluated by the European network. INFN-AIDA-WP3 is also willing to contribute to the development of CMOS readout electronics following design rules for 3D interconnection with sensors, as well as to the testing of the vertically integrated structures.