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2 nd International Conference on Technology and Instrumentation in Particle Physics Chicago June 8 th – 14 th 2011 Operational experience and aging studies.

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Presentation on theme: "2 nd International Conference on Technology and Instrumentation in Particle Physics Chicago June 8 th – 14 th 2011 Operational experience and aging studies."— Presentation transcript:

1 2 nd International Conference on Technology and Instrumentation in Particle Physics Chicago June 8 th – 14 th 2011 Operational experience and aging studies on the CDF Run II Silicon Vertex Detectors Benedetto Di Ruzza on behalf of the CDF II Silicon Operation Group

2 06/11/2011 TIPP 2011 Benedetto Di Ruzza2 OUTLINE 1) The Tevatron 2) The CDF II detector 3)The CDF II silicon subdetectors 4)Silicon aging studies 5) Conclusions

3 06/11/2011 TIPP 2011 Benedetto Di Ruzza3 The Tevatron and the CDFII detector

4 Fermilab accelerators chain 406/11/2011 TIPP 2011 Benedetto Di Ruzza

5 5 The Tevatron BS=Beam sync ticks =132ns Bunches structure Available Pbars ( ) I nitial luminosity record: 4.05 x (cm -2 s -1 ) Mean Pbar production efficiency: ~ 22 x10 -6 Mean Pbar Accumulation rate: ~ 25x (hr -1 )

6 06/11/2011 TIPP 2011 Benedetto Di Ruzza 6

7 06/11/2011 TIP 2011 Benedetto Di Ruzza7 Dose rate during beam dump Clean abort Quench

8 06/11/2011 TIPP 2011 Benedetto Di Ruzza8 Dose rate during data taking Dose rate

9 06/11/2011 TIPP 2011 Benedetto Di Ruzza9 Beam doses during data taking

10 06/11/2011 TIPP 2011 Benedetto Di Ruzza10 Beam condition during data taking

11 06/11/2011 TIPP 2011 Benedetto Di Ruzza11 The CDFII Detector

12 06/11/2011 TIPP 2011 Benedetto Di Ruzza12 L00 1 Layer ( ISL) The Silicon Detectors

13 06/11/2011 TIPP 2011 Benedetto Di Ruzza13 The CDFII Silicon detectors L00: Single-sided strips: “Narrows” (SGS Thomson and 2 Microns) “Wides” (Hamamatsu). SVX: Double-sided strips: Layers 0,1,3 (Hamamatsu) perpendicular strips, Layers 2,4 (Micron) small angled strips. ISL: Double-sided strips: (Hamamatsu+Micron) small angled strips OVERVIEW

14 06/11/2011 TIPP 2011 Benedetto Di Ruzza14 <== X-Y (r-phi) and Y-Z (r-z) views The Silicon Detectors L00 detail ==> Beam pipe Cooling lines narrow sensors wide sensors carbon support

15 06/11/2011 TIPP 2011 Benedetto Di Ruzza15 The Silicon Detectors SVXII detail: 3 barrels 5 layers 12 wedges SVXII: the readout is used in the trigger too

16 06/11/2011 TIPP 2011 Benedetto Di Ruzza16 The Silicon Detectors: ISL ISL central ISLforward: (inner and external barrels) ISL detail

17 06/11/2011 TIPP 2011 Benedetto Di Ruzza17 Radiation Field inside the detector

18 06/11/2011 TIPP 2011 Benedetto Di Ruzza18 Radiation damage

19 06/11/2011 TIPP 2011 Benedetto Di Ruzza19 Aging studies: variables of interest

20 06/11/2011 TIPP 2011 Benedetto Di Ruzza20 Depletion Voltage M.Moll, PhD Thesis, (1992) UniHamburg ;

21 06/11/2011 TIPP 2011 Benedetto Di Ruzza21 Depletion voltage Measurement

22 06/11/2011 TIPP 2011 Benedetto Di Ruzza22 Depletion Voltage study – Signal Vs. Bias

23 06/11/2011 TIP 2011 Benedetto Di Ruzza23 Depletion Voltage study – Signal Vs. Bias

24 Depletion Voltage Projections L00-L0 24 Prediction for L00 Prediction for SVX-L0 06/11/2011 TIPP 2011 Benedetto Di Ruzza

25 Very preliminary result on L /11/2011 TIPP 2011 Benedetto Di Ruzza Studies still ongoing

26 06/11/2011 TIPP 2011 Benedetto Di Ruzza26 Depletion Voltage study Noise Vs. Bias GOOD: does not require beam time BAD: not possible for single side strip or after inversion type

27 06/11/2011 TIPP 2011 Benedetto Di Ruzza27 Signal / Noise projection

28 06/11/2011 TIPP 2011 Benedetto Di Ruzza28 Not only the sensors are in a radiation environment VME crates SY527

29 Wirebond Resonances: Problems induced by trigger rates: 06/11/2011 TIPP 2011 Benedetto Di Ruzza29

30 06/11/2011 TIPP 2011 Benedetto Di Ruzza30 Other Operational Challenges

31 06/11/2011 TIPP 2011 Benedetto Di Ruzza31 Conclusions 10

32 Benedetto Di Ruzza32 Back-up slides

33 Measured Radiation Field 33 Radiation field measured with TLDs outside the silicon volume in NIM A (2003) Bias current evolution consistent with this radiation dose

34 Benedetto Di Ruzza34 Inversion point (SGS Thomson)

35 Benedetto Di Ruzza35 Silicon D.A.Q. for SVX II

36 Benedetto Di Ruzza36 Evolution of Bias currents (R. J. Tesarek et al. NSS 2003)

37 Benedetto Di Ruzza37 Depletion Voltage

38 Benedetto Di Ruzza38 Depletion Voltage Projection L1

39 Benedetto Di Ruzza39 ISL cooling lines

40 40

41 Benedetto Di Ruzza41 SVXII.

42 Benedetto Di Ruzza42

43 43 Laser diode/photo diode

44 44

45 45 ISL

46 46 ISL

47 Benedetto Di Ruzza47 Readout Chip Accounting

48 48 END


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