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Haga clic para modificar el estilo de texto del patrón I+D en el CNM/IMB para futuros aceleradores Manuel Lozano Update from Santiago meeting, October.

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Presentation on theme: "Haga clic para modificar el estilo de texto del patrón I+D en el CNM/IMB para futuros aceleradores Manuel Lozano Update from Santiago meeting, October."— Presentation transcript:

1 Haga clic para modificar el estilo de texto del patrón I+D en el CNM/IMB para futuros aceleradores Manuel Lozano Update from Santiago meeting, October 2008

2 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano CNM Clean Room expansion  From 1000 to 1500 m2  Still waiting for some equipments relevant for advanced packaging Wafer grinder CMP Wafer alignment and bonding system (3D packaging)  Clean room operational, but not 100% IFCA Not ready yet

3 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano New equipment: Plastic Laser-sintering system  EOS FORMIGA P 100 (Germany)  Very fast prototyping  From CAD to piece in a couple of hours Effective building volume: 20 cm x 25 cm x 33 cm Resolution ~0.1 mm 20 mm height/hr  Very interesting to test new ideas either at reduced scale or actual size or to make functional pieces

4 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano New equipment: Plastic Laser-sintering system  Very complex pieces Only limitation, no closed cavities  Different materials available  Examples: Springs Nut and bolts Hinges Micropipes

5 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano IR transparent detectors  In collaboration with IFCA  Mask finalized  12 different detectors  Common parameters:  active area= 1.2x1.5 cm2  circular window in the back metal (r=0.5 cm)  256 readout strips with 1.5 cm length  9 guard rings and scribe line with n-well  6 detectors have been completed with floating intermediate strips in order to improve spatial resolution using the capacitive charge division principle. IFCA

6 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano IR transparent detectors  Processing run started IFCA 15 μm strip width 5 μm metal width Intermediate strip

7 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano IR transparent detectors  Will be tested at IFCA using ALIBAVA System with laser IFCA Partially funded by Spanish Acces to Large Facilities: GICSERV

8 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Medipix2 Diodes 2D spreading Test structures Atlas pixel 3d pads strips Long strip 10x10 matrix MOS Test for SEM 3x3 matrix Pilatus 3D detector technology

9 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano 3D detector technology  Success with Medipix type pixel sensors  Now we are designing of a new mask set for ATLAS pixel sensors  Work done in the framework of RD50 collaboration.  Possibility of developing a prototype of B-layer for ATLAS upgrade with 3D pixels 0.5 m 2, 2500 chips, 250 wafers CNM will try to get the contract Partially funded by Spanish Acces to Large Facilities: GICSERV

10 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano ALIBAVA: A readout system for microstrip silicon sensors  System finished  20 units already distributed  New fabrication batch will start soon  Upgrade for test beam telescope  Upgrade for ethernet connectivity

11 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Bump Bonding  In collaboration with IFAE  Bump bonding already working  Medipix and ATLAS pixels successfully bonded  Now working to increase yield and qualify the technology  SET/Süss FC150 machine  1 micron placing accuracy  In-situ reflow

12 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Trenched detectors  Work started in collaboration with IFAE (Cristobal Padilla)  Trenches used to reduce the dead area at the edge of the sensor (also named edgeless, slim-edge,...)  First application for ATLAS pixels  Can be extended to strips

13 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano High resistivity polysilicon used to fill the trenches to assure mechanical strength Thermal oxide inside trenches to assure insulation. p+ p 10um30 um 150um Al Side cut (DRIE or Diamond saw) poly SiO 2 n+ p+ n+ 50 um 6um 80um p-stop Pixels p+ Si 3 N 4 guard p+ UBM 300um Δ 30um Trenched detectors  Initial configuration

14 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Simulation  The trench isolates the depletion area from the damaged cut.  The equipotential lines accumulates at the implant decreasing the breakdown voltage.  However, it is still possible to over deplete the detector. Accumulation of equipotential lines

15 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Trench + diamond saw cut

16 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Trench filled with polysilicon

17 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano ATLAS upgrade readout electronics TECHNOLOGIESFEATURES KEY PARAMETERS f T (GHz) β (target) V CE0 (V) SGB25VD Low cost SG25H1 MAIN TECHNOLOGY SG25H3 Alternative  3 transistor types from SGB25VD technology (30, 50, 80 GHz)  Minimum transistor in tech. SG25H1 (0.17 μm 2 )  2 different transistors from tech. SG25H3 (0.17μm 2 & 0.35μm 2 )  Study of 3 tecnologies 0.25 μm SiGe BiCMOS from IHP (Germany)

18 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano GICSERV  Easy access through the Spanish “Access to Large Facilities” Program: ICTS GICSERV  Last call January applications, 50 accesses  7 projects approved (1 rejected) in detector technology for HEP 3D medipix-type detectors. Diamond (UK) Stripixels. Laaperanta and BNL (Finland and USA) Thin pixel detectors. Univ. Santiago Thin strip detectors. IFCA Atlas pixels with slim edge. IFAE Increased efficiency detectors. Univ. Liverpool (UK) Bump bonding for DEPFETS. MPI Halbleiterlabor (Germany)  5 projects in 2008, and 3 in 2007

19 ILC Meeting. Barcelona, May 2008 I+D en el CNM/IMB para futuros aceleradoresManuel Lozano Conlusions  Transparent detectors processing.  Bump bonding working  Started activity in pixel and strip slim-edge detectors  ALIBAVA system finished and distributed  Activity in ATLAS upgrade evaluating BiCMOS technologies  GICSERV working satisfactory


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