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Magnetoelectric Random Access Memory (MeRAM) Shaodi Wang NanoCAD Group, UCLA Puneet Gupta (puneet@ee.ucla.edu) 1

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NanoCAD Lab STT Characteristics Shaodi Wang (shaodiwang@ucla.edu)2 Tunneling Magnetoresistance Ratio: –TMR = (R AP – R P )/ R P = 100 – 200% Resistance around 1k Ω Read/Write current : 0.x mA – Read current must be smaller than write current Energy consumption mainly comes from leakage current during read/write Fixed MgO Free

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NanoCAD Lab MeRAM Structure Shaodi Wang (shaodiwang@ucla.edu)3 J. G. Alzate et. al., IEDM, 2012 C.J. Lin et. al., IEDM, 2009

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NanoCAD Lab VCMA-Induced Switching Coercivity -The intensity of the applied magnetic field required to reduce the saturated magnetization of that material to zero. Voltage Controlled Magnetic Anisotropy (VCMA) -The coercivity can be reduced from ~ 120 Oe at equilibrium to ~ 10-20 Oe by applying voltages ~ 1 V due to the VCMA effect Shaodi Wang (shaodiwang@ucla.edu)4 J. G. Alzate et. al., IEDM, 2012

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NanoCAD Lab Switching Shaodi Wang (shaodiwang@ucla.edu)5 J. G. Alzate et. al., IEDM, 2012

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NanoCAD Lab Switching Control Puneet Gupta (puneet@ee.ucla.edu)6 I switch =V/R inter

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NanoCAD Lab Variation Impact Puneet Gupta (puneet@ee.ucla.edu)7 12σ STT RAM MeRAM Variability: Non-uniformity in fabrication of MTJ devices results in variances in read and write processes

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NanoCAD Lab Thanks Shaodi Wang (shaodiwang@ucla.edu)8

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