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Magnetoelectric Random Access Memory (MeRAM) Shaodi Wang NanoCAD Group, UCLA Puneet Gupta 1.

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Presentation on theme: "Magnetoelectric Random Access Memory (MeRAM) Shaodi Wang NanoCAD Group, UCLA Puneet Gupta 1."— Presentation transcript:

1 Magnetoelectric Random Access Memory (MeRAM) Shaodi Wang NanoCAD Group, UCLA Puneet Gupta 1

2 NanoCAD Lab STT Characteristics Shaodi Wang Tunneling Magnetoresistance Ratio: –TMR = (R AP – R P )/ R P = 100 – 200% Resistance around 1k Ω Read/Write current : 0.x mA – Read current must be smaller than write current Energy consumption mainly comes from leakage current during read/write Fixed MgO Free

3 NanoCAD Lab MeRAM Structure Shaodi Wang J. G. Alzate et. al., IEDM, 2012 C.J. Lin et. al., IEDM, 2009

4 NanoCAD Lab VCMA-Induced Switching Coercivity -The intensity of the applied magnetic field required to reduce the saturated magnetization of that material to zero. Voltage Controlled Magnetic Anisotropy (VCMA) -The coercivity can be reduced from ~ 120 Oe at equilibrium to ~ Oe by applying voltages ~ 1 V due to the VCMA effect Shaodi Wang J. G. Alzate et. al., IEDM, 2012

5 NanoCAD Lab Switching Shaodi Wang J. G. Alzate et. al., IEDM, 2012

6 NanoCAD Lab Switching Control Puneet Gupta I switch =V/R inter

7 NanoCAD Lab Variation Impact Puneet Gupta 12σ STT RAM MeRAM Variability: Non-uniformity in fabrication of MTJ devices results in variances in read and write processes

8 NanoCAD Lab Thanks Shaodi Wang


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