Presentation is loading. Please wait.

Presentation is loading. Please wait.

TEORI DASAR HUBUNGAN SEMIKONDUKTOR Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw.

Similar presentations


Presentation on theme: "TEORI DASAR HUBUNGAN SEMIKONDUKTOR Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw."— Presentation transcript:

1 TEORI DASAR HUBUNGAN SEMIKONDUKTOR Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., Robert Boylestad, Louis Nashelsky Sixth Edition; Prentice Hall,1997.

2 Review: Semiconductor Properties Variation –Intrisic Concentration vs Temperature: –Mobility vs Temperature: ; m n =2.5, m p =2.7 (100

3 Review: Currents in semiconductor Drift Current: Drill: Calculate the conductivity of an extrinsic semiconductor with donor atom’s concentration of atom/cm 3 (at 300K)!

4 REVIEW: The Physics of Electronics Carrier’s Concentration in extrinsic Semiconductor pn = n i 2 Mass-Action Law Charge Density should maintain electric neutrality of crystal For n-type semiconductor, N A = 0; thus: For p-type semiconductor, N D = 0; thus:

5 Review: Currents in semiconductor Diffusion Current: Concentration xx0x0 x1x1 p(x 0 ) p(x 1 ) JpJp D p = Diffusion Constant of Carrier Einstein Relationship between D and 

6 Review: Currents in semiconductor Total Current: Concentration x x0x0 x1x1 p(x 0 ) p(x 1 ) JpJp 

7 Review: Graded semiconductor Concentration x x1x1 x2x2 p(x 1 ) p(x 2 ) V 21 p1p1 p2p2 Jp = 0; in open circuited steady state condition

8 pn JUNCTION DIODE Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994.

9 Open Circuited Junction p typen type Semiconductors Electrons Holes neutral

10 Open Circuited Junction Junction Formation p typen type Junction Depletion Region Space Charged Region

11 Open Circuited Junction Junction Formation p typen type Charge Density (  V ) Depletion Region Space Charged Region -Wp Wn

12 Open Circuited Junction Junction Formation p typen type Field Intensity (  ) Depletion Region Space Charged Region -Wp Wn

13 Open Circuited Junction Junction Formation p typen type Electrostatic Potential (V) Depletion Region Space Charged Region -Wp Wn V = 0 V0V0

14 Open Circuited Junction Junction Formation p typen type Potential Barrier of electrons(V) Depletion Region Space Charged Region -Wp Wn V = 0 V0V0

15 Closed Circuited Junction Forward Biased pn Junction p typen type Depletion Region Space Charged Region

16 Closed Circuited Junction Forward Biased pn Junction p typen type Depletion Region Space Charged Region

17 Closed Circuited Junction Reverse Biased pn Junction p typen type Depletion Region Space Charged Region

18 Closed Circuited Junction Reverse Biased pn Junction p typen type Depletion Region Space Charged Region

19 Closed Circuited Junction Reverse Biased pn Junction p typen type Depletion Region Space Charged Region

20 VOLT-AMPERE CHARACTERISTIC IDID VDVD I S (  A Scale) VV -V Z Cut-in Offest Turn-on Breakdown  = 2 (Si)  = 1.5 (Ge)

21 Diode Circuit Analysis: Load-Line Concept IDID VDVD + _ V AA R VDVD IDID + _ Q I DQ V DQ V AA V AA /R Solve for: V AA = 3 V R = 2 K 

22 CALCULATION EXAMPLES Given in class


Download ppt "TEORI DASAR HUBUNGAN SEMIKONDUKTOR Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw."

Similar presentations


Ads by Google