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**TEORI DASAR HUBUNGAN SEMIKONDUKTOR**

Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994. Robert Boylestad, Louis Nashelsky Sixth Edition; Prentice Hall,1997.

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**Review: Semiconductor Properties Variation**

Intrisic Concentration vs Temperature: Mobility vs Temperature: ; mn=2.5, mp=2.7 (100<T<400K) Mobility vs Electric Field intensity: ~ 107 cm/s 103 V/cm 104 V/cm

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**Review: Currents in semiconductor**

Drift Current: Drill: Calculate the conductivity of an extrinsic semiconductor with donor atom’s concentration of 1016 atom/cm3 (at 300K)!

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**Charge Density should maintain electric neutrality of crystal**

REVIEW: The Physics of Electronics Carrier’s Concentration in extrinsic Semiconductor Mass-Action Law pn = ni2 Charge Density should maintain electric neutrality of crystal For n-type semiconductor, NA = 0; thus: For p-type semiconductor, ND = 0; thus:

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**Review: Currents in semiconductor**

Jp Diffusion Current: Einstein Relationship between D and Concentration p(x0) p(x1) x0 x1 x Dp = Diffusion Constant of Carrier

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**Review: Currents in semiconductor**

Total Current: Jp Concentration p(x0) p(x1) x0 x1 x

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**Review: Graded semiconductor**

Concentration x x1 x2 p(x1) p(x2) V21 p1 p2 Jp = 0; in open circuited steady state condition

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**Hamzah Afandi, Antonius Irianto dan**

pn JUNCTION DIODE Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994.

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**Open Circuited Junction**

neutral neutral Semiconductors Semiconductors Holes Electrons p type n type

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**Open Circuited Junction Junction Formation**

p type n type Depletion Region Space Charged Region

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**Open Circuited Junction Junction Formation**

Charge Density (V) Wn -Wp p type n type Depletion Region Space Charged Region

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**Open Circuited Junction Junction Formation**

Wn -Wp Field Intensity () p type n type Depletion Region Space Charged Region

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**Open Circuited Junction Junction Formation**

V0 Wn -Wp V = 0 Electrostatic Potential (V) p type n type Depletion Region Space Charged Region

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**Open Circuited Junction Junction Formation**

Potential Barrier of electrons(V) Wn -Wp V0 V = 0 p type n type Depletion Region Space Charged Region

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**Closed Circuited Junction Forward Biased pn Junction**

p type n type Depletion Region Space Charged Region

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**Closed Circuited Junction Forward Biased pn Junction**

p type n type Depletion Region Space Charged Region

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**Closed Circuited Junction Reverse Biased pn Junction**

p type n type Depletion Region Space Charged Region

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**Closed Circuited Junction Reverse Biased pn Junction**

p type n type Depletion Region Space Charged Region

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**Closed Circuited Junction Reverse Biased pn Junction**

p type n type Depletion Region Space Charged Region

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**VOLT-AMPERE CHARACTERISTIC**

= 2 (Si) = 1.5 (Ge) ID V -VZ VD IS (A Scale) Cut-in Offest Turn-on Breakdown

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**Diode Circuit Analysis: Load-Line Concept**

+ _ VAA R VD ID ID VAA /R Solve for: VAA = 3 V R = 2 K IDQ Q VD VDQ VAA

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CALCULATION EXAMPLES Given in class

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FIGURE 7.1 Introducing the reduce and return approach. Robert L. Boylestad Introductory Circuit Analysis, 10ed. Copyright ©2003 by Pearson Education, Inc.

FIGURE 7.1 Introducing the reduce and return approach. Robert L. Boylestad Introductory Circuit Analysis, 10ed. Copyright ©2003 by Pearson Education, Inc.

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