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1 Chapter 5-1. PN-junction electrostatics You will also learn about: Poisson’s Equation Built-In Potential Depletion Approximation Step-Junction Solution In this chapter you will learn about pn junction electrostatics: Charge density, electric field and electrostatic potential existing inside the diode under equilibrium and steady state conditions.

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2 PN-junction fabrication PN-junctions are created by several processes including: 1. Diffusion 2. Ion-implantation 3. Epitaxial deposition Each process results in different doping profiles

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3 Ideal step-junction doping profile

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4 Equilibrium energy band diagram for the pn junction E F = same everywhere under equilibrium Join the two sides of the band by a smooth curve.

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5 Electrostatic variables for the equilibrium pn junction Potential, V = (1/q) (E C –E ref ). So, potential difference between the two sides (also called built-in voltage, V bi ) is equal to (1/q)( E C ). = charge density = K s o

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6 Conceptual pn-junction formation Holes and electrons will diffuse towards opposite directions, uncovering ionized dopant atoms. This will build up an electric field which will prevent further movement of carriers. p and n type regions before junction formation

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7 The built-in potential, V bi When the junction is formed, electrons from the n-side and holes from the p-side will diffuse leaving behind charged dopant atoms. Remember that the dopant atoms cannot move! Electrons will leave behind positively charged donor atoms and holes will leave behind negatively charged acceptor atoms. The net result is the build up of an electric field from the positively charged atoms to the negatively charged atoms, i.e., from the n- side to p-side. When steady state condition is reached after the formation of junction (how long this takes?) the net electric field (or the built in potential) will prevent further diffusion of electrons and holes. In other words, there will be drift and diffusion currents such that net electron and hole currents will be zero.

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8 Equilibrium conditions Under equilibrium conditions, the net electron current and hole current will be zero. electron drift current opposite to electron flux N A = 10 17 cm 3 N D = 10 16 cm 3 electron diffusion current opposite to electron flux hole diffusion current hole drift current net current = 0 E -field

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9 The built-in potential, V bi p-siden-side ECEiEVECEiEV q V bi = (E i E F ) p-side + (E F E i ) n-side ECEiEVECEiEV EFEF

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10 The built-in potential, V bi The built-in potential, V bi, measured in Volts, is numerically equal to the “shift” in the bands expressed in eV. V bi = (1/q) {(E i E F ) p-side + (E F E i ) n-side } An interesting fact:

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11 Majority and minority carrier concentrations p npnp n pnpn x p x n x p-sideN A N D n-side

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12 Built-in potential as a function of doping concentration for an abrupt p + n or n + p junction

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13 Depletion approximation Poisson equation We assume that the free carrier concentration inside the depletion region is zero.

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14 Example 1 A p-n junction is formed in Si with the following parameters. Calculate the built-in voltage, V bi. N D = 10 16 cm –3 N A = 10 17 cm –3 Calculate majority carrier concentration in n-side and p-side. Assume n n = N D = 10 16 cm 3 and p p = N A = 10 17 cm 3. Plug in the numerical values to calculate V bi.

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15 Example 2 A pn junction is formed in Si with the following parameters. Calculate the built-in voltage, V bi. N D = 2 10 16 cm –3 N A = 3 10 17 cm –3 N A = 1 10 16 cm –3 N D = 2 10 17 cm –3 Calculate majority carrier concentration in n-side and p-side. n n = “effective N D ” = 10 16 cm -3 ; p p = “effective N A ” = 10 17 cm –3 Plug in the numerical values to calculate V bi. Here N A and N D are “effective” or net values.

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© Electronics ECE 1312 Recall-Lecture 2 Introduction to Electronics Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration,

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