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Electron Poor Materials Research Group EPM RG Updates of Experiments in Augsburg --- Crystallographic study of SiB 3, ZnSb… --- Synthetic attempts for B --- Property measurements of (ZnSnSb 2 ) 1-x (InSb) 2x

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Charge Density Study by the Analysis of High Resolution Diffraction Data Bruker AXS diffractometer with Imus micro-focus X-Ray Source Ag-radiation, the same sin at much lower angle Enough data redundancy for good statistics

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Multipole Refinement of ZnSb in Jana 2006 Diffraction data were collected at 100K with 2 up to 120 o Extinction and anharmonicity were refined before starting the multipole refinement d electrons of Zn were considered as valence electrons Multipole refinment was stopped at 2 nd order (quadruple) R=1.38% and highest peak of 0.34 e/Å 3

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Total Density

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Total Laplacian +/- 8, 4, 2 * 10^n and n is +/- 3, 2, 1.

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Dumbbell Rattling?

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Heat Capacity of ZnSb

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Synthesis of b - SiB 3 with high pressure

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Si 1-x Ge x B 3 Si2: 90% Ge2: 10% Si1: 84% Ge1: 16%

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Thermoelectric Chalcopyrite (ZnSnSb 2 ) 1-x (InSb) 2x + 4Sn x = 0.9, x = 0.85, x=0.8 and InSb (quenched from 1:1 melt and Sn- flux growth)

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InSb Seebeck

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All Seebecks from Augsburgs work

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All TCs from Augsburgs work

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All Resistivities

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Acknowledgement Dr. Wolfgang Scherer Dr. Ernst-Wilhelm Scheidt Dr. Georg Eickerling Dr. Francisco J. Garcia-Garcia Christoph Hauf Andreas Fischer

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