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Published bySilas Cousins Modified over 2 years ago

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h 2 1 2 < 1

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Rekombinasjon via tilstand i bandgapet

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Spreading of a ’spike’ of electrons by diffusion t 1 < t 2 < t 3

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D n (cm 2 /s) D p (cm 2 /s) μ n (cm 2 /Vs) μ p (cm 2 /Vs) Si3512.51350480 Ge1005039001900 GaAs220108500400 Diffusjonskonstanter og mobiliteter ved 300 K i intrinsiske materialer (jfr ’Streetman’ Table 4-1) 0.0259 V 0.0256 0.0259 0.0260 0.0263 0.0250

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Current entering and leaving a volume ΔxA Kontinuitetslikningen!!

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= p 0 + δp(x) δp(x)

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RIE CFC

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Deponering av Al via sputtering

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Deplesjonsone

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-V0-V0

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+- W Figure 5.15 (a): Minority carrier distributions on the two sides of the transition (depletion) region for a forward-biased junction. The figure provides also definitions of distances x n and x p measured from the transition (depletion) region edges.

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I = I p + I n = konstant W

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Avalanche (Lavin) gjennombrudd Figure 5.21: Electron-hole pairs generated by impact ionization; (b) a single ionizing collision by an incoming electron and (c) primary, secondary and tertiary collisions. (b)(c)

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GeSiGaAsGaAsP

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(Diffusjon) Rekombinasjon & generasjon Jeppson

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Vakuumnivå Schottky kontakt på n-type halvledere

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Schottky kontakt på p-type halvledere Vakuumnivå

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Ohmske kontakter n-type m < s p-type m > s Figure 5.43

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Figure 5.42

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D n (cm 2 /s) D p (cm 2 /s) μ n (cm 2 /Vs) μ p (cm 2 /Vs) Si3512.51350480 Ge1005039001900 GaAs220108500400 Diffusjonskonstanter og mobiliteter ved 300 K i intrinsiske materialer (jfr ’Streetman’ Table 4-1) 0.0259 V 0.0256 0.0259 0.0260 0.0263 0.0250

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