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Marina REYBOZ (1), Thierry POIROUX (1), Olivier ROZEAU (1), Patrick MARTIN (1) & Jalal JOMAAH (2) (1) CEA-LETI, 17 rue des Martyrs, 38 054 Grenoble, France.

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Presentation on theme: "Marina REYBOZ (1), Thierry POIROUX (1), Olivier ROZEAU (1), Patrick MARTIN (1) & Jalal JOMAAH (2) (1) CEA-LETI, 17 rue des Martyrs, 38 054 Grenoble, France."— Presentation transcript:

1 Marina REYBOZ (1), Thierry POIROUX (1), Olivier ROZEAU (1), Patrick MARTIN (1) & Jalal JOMAAH (2) (1) CEA-LETI, 17 rue des Martyrs, 38 054 Grenoble, France (2) IMEP, 3 Parvis Louis Néel, 38016 Grenoble, France Explicit V th Based Compact Model of Independent DG MOSFETs with Short Channel Effects

2 MOS AK – 09/22/2006 2 2006 BASIS OF THE MODEL We are looking for these equations because we know how to unify them (BSIM3v3) Weak inversion Strong inversion Q inv = Q inv1 + Q inv2 BASIS BASIC EQUATIONS PHYSICAL ASSUMPTIONS EXPLANATIONS IN THE POSTER i = 1 or 2

3 MOS AK – 09/22/2006 3 2006 Short Channel Effects Superposition Theorem + Developpement in infinite series PHYSICAL ASSUMPTION X. Liang et al., A 2-D Analytical Solution for SCEs in DG MOSFETs IEEE Transac. On Electron Devices, vol.51, n°8, 2004. & i = 1 or 2

4 MOS AK – 09/22/2006 4 2006 Results L=30nm & T si =10nm Work in progress To physically model SCE in saturation: Velocity saturation Early voltage


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