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Published byAaron Kearney Modified over 2 years ago

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Marina REYBOZ (1), Thierry POIROUX (1), Olivier ROZEAU (1), Patrick MARTIN (1) & Jalal JOMAAH (2) (1) CEA-LETI, 17 rue des Martyrs, Grenoble, France (2) IMEP, 3 Parvis Louis Néel, Grenoble, France Explicit V th Based Compact Model of Independent DG MOSFETs with Short Channel Effects

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MOS AK – 09/22/ BASIS OF THE MODEL We are looking for these equations because we know how to unify them (BSIM3v3) Weak inversion Strong inversion Q inv = Q inv1 + Q inv2 BASIS BASIC EQUATIONS PHYSICAL ASSUMPTIONS EXPLANATIONS IN THE POSTER i = 1 or 2

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MOS AK – 09/22/ Short Channel Effects Superposition Theorem + Developpement in infinite series PHYSICAL ASSUMPTION X. Liang et al., A 2-D Analytical Solution for SCEs in DG MOSFETs IEEE Transac. On Electron Devices, vol.51, n°8, & i = 1 or 2

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MOS AK – 09/22/ Results L=30nm & T si =10nm Work in progress To physically model SCE in saturation: Velocity saturation Early voltage

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