1. Explicit Vth Based Compact Model of Independent DG MOSFETs with Short Channel Effects
Marina REYBOZ(1), Thierry POIROUX(1), Olivier ROZEAU(1), Patrick MARTIN(1) & Jalal JOMAAH(2)
(1) CEA-LETI, 17 rue des Martyrs, Grenoble, France
(2) IMEP, 3 Parvis Louis Néel, Grenoble, France

2. BASIS OF THE MODEL Qinv = Qinv1 + Qinv2 BASIS BASIC EQUATIONS PHYSICAL
Weak inversion
Strong inversion
i = 1 or 2
i = 1 or 2
We are looking for these equations
because we know how to unify them
(BSIM3v3)
BASIC
EQUATIONS
PHYSICAL
ASSUMPTIONS
i = 1 or 2
EXPLANATIONS IN THE POSTER

3. & Short Channel Effects PHYSICAL ASSUMPTION
Superposition Theorem + Developpement in infinite series
X. Liang et al., “A 2-D Analytical Solution for SCEs in DG MOSFETs”
IEEE Transac. On Electron Devices, vol.51, n°8, 2004.
PHYSICAL ASSUMPTION
&
i = 1 or 2
i = 1 or 2
i = 1 or 2

4. To physically model SCE in saturation:
Results
L=30nm & Tsi=10nm
Work in progress
To physically model SCE in saturation:
Velocity saturation
Early voltage