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3-6 September 2002 Antwerp Hilton, Belgium. Outline Wednesday Sept 4 th, 2002 Introduction Exposure tools/Immersion lithography Materials Lasers Thursday.

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Presentation on theme: "3-6 September 2002 Antwerp Hilton, Belgium. Outline Wednesday Sept 4 th, 2002 Introduction Exposure tools/Immersion lithography Materials Lasers Thursday."— Presentation transcript:

1 3-6 September 2002 Antwerp Hilton, Belgium

2 Outline Wednesday Sept 4 th, 2002 Introduction Exposure tools/Immersion lithography Materials Lasers Thursday Sept 5 th, 2002 Resists I Metrology Friday Sept 6 th,2002 Masks Resists II General / closure

3 Exposure tools and immersion lithography 08:40Nikon F2 Exposure Tool Soichi Owa, Naomasa Shiraishi, Issei Tanaka, Yasuhiro Ohmura, Kazuhiro Kido Nikon Corporation 09:00Development of 157nm Exposure Tools Hideo Hata Canon Inc., Semiconductor Equipment Development Center 09:20157nm Exposure Tool Hans Jasper 1,Herman Boom 1, Tammo Uitterdijk 1, Theo Modderman 1, Jan Mulkens 1, Judon Stoeldraijer 1, Martin Brunotte 2, Birgit Mecking 2, Nils Dieckmann 2 1 ASML Veldhoven, 2 Carl Zeiss 09:40Update on MSVII Lithographic System J. McClay, B. Tirri, H. Sewell, T. Fahey ASML Wilton Session chairs : G. Fueller, A. Suzuki, R. Garreis

4 Exposure tools and immersion lithography 10:30Drivers, Prospects and Challenges for Immersion Lithography (INVITED) Burn J. Lin TSMC 10:50Immersion Lithography: Optics for the 50nm Node M. Switkes, M. Rothschild MIT Lincoln Laboratory 11:10157nm Objective Improvements, Wavefront Measurements and Modeling Predictions James Webb, Steve Mack, Tim Rich, Horst Schreiber Corning Tropel Corporation 11:30High Numerical Aperture Lens for 157nm Lithography Toshifumi Suganaga 1, Noriyoshi Kanda 1, Jae-Hwan Kim 1, Osamu Yamabe 1, Kunio Watanabe 1, Takamitsu Furukawa 1, Seiro Miyoshi 1, Toshiro Itani 1, Julian Cashmore 2, Malcolm Gower 2 1 Selete, 2 Exitech Ltd. Session chairs : G. Fueller, A. Suzuki, R. Garreis

5 Materials 13:30Calcium Fluoride Quality Improvement Will Enable High Volume F2 Lithography Tools G. Grabosch, K. Knapp, L. Parthier, E. Mörsen Schott Lithotec AG 13:50Progress in the Development of CaF2 Materials for 157nm Lithography Applications Bill Rosch, Michael Genier Corning Inc. 14:10Crystal Growth of CaF2 – Focus on Yield Enhancement N. Senguttuvan 1, K. Sumiya 1, K. Susa 1, M. Ishii 2 1 Research & Development Center, Hitachi Chemical Co., Ltd., 2 Shonan Institute of Technology 14:30CaF2 Ramp Challenges for 157nm Lithography Janice M. Golda Intel Corporation 14:50Index- and Birefringence-Dispersion Properties of CaF2, SrF2 and Ca1-xSrxF2 down to 157nm John H. Burnett 1, Zachary H. Levine 1, Eric L. Shirley 1, Robert Sparrow 2 1 National Institute of Standards and Technology, 2 Corning Inc. Session chairs : R. Sparrow, S. Kikugawa, E. Moersen

6 Materials 15:10Modified Fused Silica Glass AQF for 157 nm Lithography Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa, Y. Sasuga Asahi Glass Co. Ltd. 16:00Refractory Oxide Contamination of Optical Surfaces at 157 nm T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci, D.E. Hardy, V. Liberman, M. Rothschild MIT Lincoln Laboratory 16:20Long-Term Durability of Optical Coatings V. Liberman 1, M. Rothschld 1, N.N. Efremow 1, S.T. Palmacci 1, J.H.C. Sedlacek1, A. Grenville 2 1 MIT Lincoln Laboratory, 2 Intel Corporation/International SEMATECH 16:40Accelerated Damage to CaF2 and MgF2 Surfaces V. Liberman 1, M. Rothschld 1, N.N. Efremow 1, A. Grenville 2 1 MIT Lincoln Laboratory, 2 Intel Corporation/International SEMATECH Session chairs : R. Sparrow, S. Kikugawa, E. Moersen

7 Lasers 17:00High Power, High Repetition Rate F2-Laser for 157 nm Lithography S. Spratte 1, F. Voss 1, I. Bragin 1, E. Bergmann 1, N. Niemöller 1, T. Nagy 1, U. Rebhan 1, K. Vogler 1, I. Klaft 1, R. Pätzel 1, G. Govorkov 2, G. Hua 2 1 Lambda Physik AG, 2 Lambda Physik Inc. 17:20F2 MOPA. Some Aspects of Spectral Purity German Rylov Cymer Inc. 17:40Spectral Dynamics Analysis of Ultra-Line-Narrowed F2 Laser Ryoichi Nohdomi 3, Tatsuya Ariga 3, Hidenori Watanabe 3, Takahito Kumazaki 3, Kazuaki Hotta 4, Hakaru Mizoguchi 3, Akihiko Takahashi 1, Tatsuo Okada 2 1 Kyushu University School of Health Sciences, 2 Kyushu University, 3 Gigaphoton Inc., 4 Ushio Inc. Session chairs : R. Sandstrom, H. Mizoguchi, R. Paetzel

8 Resists I 08:30Recent Advancements in 157nm Resist Performance Karen Turnquest 1, V. Graffenberg 2, S. Patel 2, D. Miller 2, K. Dean 2, A.-M. Goethals 3, F. Van Roey 3, Jan Hermans 3, K. Ronse 3, P. Wong 4, S. Hansen 4 1 AMD Assignee to International SEMATECH, 2 International SEMATECH, 3 IMEC, 4 ASML Veldhoven 08:50Performances of Fluoropolymer Resists for 157-nm Lithography Seiichi Ishikawa, Minoru Toriumi, Tamio Yamazaki, Toshiro Itani Selete 09:10Intel 157 nm Resist Benchmarking Jeanette Roberts 1, Paul Zimmerman 2, Robert Meagley 1, Jim Powers 1 1 Intel Corporation, 2 Intel Assignee to International SEMATECH Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

9 Resists I 09:30Advances in Fluorinated Polymers for 157nm Lithography Will Conley 1, Paul Zimmerman 1, Daniel Miller 1, Brian Trinque 2, H.V. Tran 1, Brian Osborn 2, Charles Chambers 2, Yu-Tsai Hsieh 2, Schuyler Corry 2, Takashi Chiba 2, C. Grant Willson 2 1 International SEMATECH, 2 Department of Chemistry & Chemical Engineering, University of Texas at Austin 09:50Fluoropolymer Resists for Single Layer 157 nm Lithography: Optimization of Their Combined Properties M. K. Crawford, W. Farnham, A. E. Feiring, J. Feldman, R. H. French, K. W. Leffew, S. Nassirpour, V. A. Petrov, F. L. Schadt III, R. J. Smalley, F. C. Zumsteg DuPont 10:10Process and Formulation Development of Dissolution Inhibitors for 157 nm Microlithography: A Progress Report Charles Chambers 1, Will Conley 2, Daniel Miller 3, Brian Osborn 1, Hoang V. Tran 1, Brian Trinque 1, Matthew Pinnow 1, Takashi Chiba 1, Paul Zimmerman 4, C. Grant Willson 3 1 Departments of Chemistry and Chemical Engineering, University of Texas, 2 Motorola assignee to International SEMATECH, 3 International SEMATECH, 4 Intel assignee to International SEMATECH Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

10 Metrology 11:00Angle Resolved Scattering Measurements at 157nm T.M. Bloomstein, D.E. Hardy, M. Rothschild MIT Lincoln Laboratory 11:20VUV Spectroscopic Ellipsometry Studies of Key Substrate Materials for 157nm Lithography 1 N.V. Edwards, 1 S. Zollner, 1 J. Kulik, 1 Q. Xie, 1 M. Erickson, 1 X.-D. Wang, 1 D. Roan, 2 T.E. Tiwald 1 Motorola APDER; 2 J.A. Woollam Co. 11:40Automated Metrology System Combining VUV Spectroscopic Ellipsometry and Grazing X-Ray Reflectance for the Characterization of Thin Films and Multilayers of 157nm Lithography Pierre Boher, Patrick Evrard, Jean Philippe Piel, Christophe Defranoux, Jean Louis Stehle SOPRA Session chairs : J. Burnett, Y. Watakabe, W. Harnisch

11 Metrology 12:00Exicor Duv Birefringence Measurement System At Optical Lithography Wavelengths B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A. Breninger, J. List, R. Rockwell Hinds Instruments, Inc. 12.20High Brightness F2* (157nm) and ArF* (193nm) Lamps Manfred Salvermoser, D.E. Murnick Rutgers University, Dept. of Physics Session chairs : J. Burnett, Y. Watakabe, W. Harnisch

12 Masks 08:30Electron Beam Induced Processes and their Applicability to Mask Repair Johannes Bihr 2, Volker Boegli 1, Jens Greiser 2, Hans W.P. Koops 1 1 NaWoTec GmbH, 2 LEO Elektronenmikroskopie GmbH 08:50Development of Bilayered TaSiOx Embedded Attenuating PSM Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi, Masaharu Nishiguchi, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi Dai Nippon Printing Co. Ltd. 09:10157nm Attenuated PSM Films by Ion Beam Sputter Deposition Matthew Lassiter, Michael Cangemi, Darren Taylor Photronics Inc. Session chairs : C. Progler, N. Hayashi, C. Schilz

13 Masks 09:30Implementation Challenges of Fused Silica Pellicles for 157-nm Lithography Andrew Grenville 1, Emily Fisch 2, Ivan Lalovic 3, Emily Shu 4, Kyle Spurlock 5, Chris Van Peski 6, Eric Cotte 7, Phillip Reu 7, Roxann Engelstad 7, Edward Lovell 7 1 International SEMATECH/Intel Corporation, 2 IBM Microelectronics, 3 Advanced Micro Devices, 4 Intel Corporation, 5 International SEMATECH/ Advanced Micro Devices, 6 International SEMATECH, 7 University of Wisconsin 09:50Feasibility of Defect Inspection of 157nm Reticles Through Thick Pellicles Jim Wiley KLA Tencor Corporation 10:10Fused Silica Pellicle Mounting Issues Chris Van Peski 1, Andrew Grenville 2, Emily Shu 3 1 International SEMATECH, 2 International SEMATECH/Intel Corporation, 3 Intel Corporation 10:30Improvement of the Membrane Durability of Polymeric Pellicles Ikuo Matsukura ASAHI Glass Co. Ltd. Session chairs : C. Progler, N. Hayashi, C. Schilz

14 Resists II 11:20Resist Contamination Issues at 157nm Kim Dean 1, David Stark 1, Jeff Meute 2, Karen Turnquest 3 1 International SEMATECH, 2 IBM Assignee to International SEMATECH, 3 AMD Assignee to International SEMATECH 11:40Evolution of Low Absorbance 157nm Fluoresists Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary Teng, JoAnne Leonard Shipley Co. 12:00Development of Silsesquioxane Based 157nm Photoresist: an Update Raymond J. Hung 1, Mikio Yamachika 1, Takashi Chiba 2, Haruo Iwasawa 2, Akihiro Hayashi 2, Noboru Yamahara 2, Tsutomu Shimokawa 2 1 JSR Microelectronics Inc, 2 JSR Corporation Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

15 Resists II 12:20Platform Considerations for 157 nm Photoresists Ralph R. Dammel 1, Francis Houlihan 1, Raj Sakamuri 1, Sang-Ho Lee 1, M. Dalil Rahman 1, Takanori Kudo 1, Andrew Romano 1, Larry Rhodes 2, Chun Chang 2, John Lipian 2, Cheryl Burns 2, Dennis A. Barnes 2, Will Conley 3, Daniel Miller 3 1 AZ Electronic Materials,Clariant Corporation, 2 Promerus LLC, 3 International SEMATECH 12:40Pragmatic Approaches to 157nm Resist Design Sanjay Malik 1, Stephanie Dilocker 1, Tadayoshi Kokubo 2 1 Arch Chemicals, Inc., 2 FUJIFILM ARCH Co. Ltd Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

16 General / Closure 14:30An Analysis of 157nm Technology Cost of Ownership Walt Trybula and Phil Seidel International SEMATECH 14:50Closing Remarks Luc Van den hove IMEC

17 Poster Session: Metrology Line-Edge Roughness Calculation of Photoresists Using Off-Line Analysis of Top-Down SEM Images G. P. Patsis 1, T. Hoffmann 2, G. Grozev 3, A. Tserepi 1, V. Constantoudis 1, and E Gogolides 1 1 NCSR Demokritos, Institute of Microelectronics, 2 IMEC vzw, 3 Assignee of ARCH Chemicals at IMEC Analysis of Top-down SEM Images of Resists for Line-edge Roughness (LER) Calculations: What are the Best Descriptors of LER Based on Scaling and Fractal Analysis? V. Constantoudis 1, G. P. Patsis 1, T. Hoffmann 2, G. Grozev 3, A. Tserepi 1, and E Gogolides 1 1 NCSR Demokritos, Institute of Microelectronics, 2 IMEC vzw, 3 Assignee of ARCH Chemicals at IMEC

18 Poster Session: Masks Molecular Contamination in 157 nm Lithography: Feasibility of Reticle Cleaning Anton Duisterwinkel 1, Willem van Schaik 2 1 TNO TPD Center for Contamination Control, 2 ASML, Veldhoven Development of Hard Pellicle for 157 nm lithography K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta, H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro, S. Kikugawa and Y.Sasuga ASAHI Glass Co. Ltd. Fundamentals of Transparancy in Fluoropolymers for Use as 157nm Soft Pellicles Roger H. French 1, Robert C. Wheland 1, M. F. Lemon 1, Edward Zhang 2, Joseph Gordon 2 1 DuPont Co. Central Research, 2 DuPont Photomasks Inc. Printing 65nm Dense Lines by Using Phase Masks at 157nm Wavelength L.A. Wang, H. C. Chen Institute of Electro-Optical Engineeing, National Taiwan University

19 Poster Session: Lasers A Novel Large Area 172nm Xe 2 * VUV Excimer Lamp Manfred Salvermoser, D.E. Murnick Rutgers University, Dept. of Physics Compact Excimer Lasers at 157 nm for Metrology and Inspection A. Görtler, C. Strowitzki TuiLaser AG

20 Poster Session: Materials The Small Optical Anisotropy in CaF 2 : on the Connection to Exciton Dispersion M. Letz 1, W. Mannstadt 1, M. Brinkmann 1, G. Wehrhan 2, L. Parthier 2, E. Mörsen 2 1 Schott Glas, Research and Development, 2 Schott Lithotec AG Ultrasonic Sensor System For Calcium Fluoride Crystal Manufacture Joe Rose 1, Chuck Morris 1, John Schupp 2, Kyle Spurlock 3 1 Pennsylvania State University, 2 ACT Optics and Engineering, Inc., 3 International SEMATECH Optical Properties of Ca x Sr ( 1-x) F 2 Crystals Robert W. Sparrow 1, Charlene M. Smith 2 1 Specialty Materials Division, Corning Incorporated, 2 Science and Technology Division, Corning Incorporated

21 Poster Session: Materials Equipment for Annealing of Ca F 2 Serhat Yesilyurt, Shariar Motakef Cape Simulations, Inc. The Influence of Contamination on 157 nm Optical Components Lutz Raupach Jenoptik Laser, Optik, Systeme GmbH

22 Poster Session: Exp. Tools EHS impacts associated with the emerging materials and processes of advanced photolithography Jeffrey Heaps International SEMATECH 157nm 0.85NA Lens Upgrade at ISMT Jeff Meute 1, Yung-Tin Chen 1, Georgia Rich 1, Julian Cashmore 2, Malcolm Gower 2, Dominic Ashworth 2, Jim Webb 3, Bruce Smith 4 1 International SEMATECH, 2 Exitech Ltd., 3 Corning Tropel, 4 Rochester Institute of Technology Process Simulation and Optimization with 157-nm High NA Lens for 65 nm Node Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim Dean International SEMATECH Extreme-NA Water Immersion Lithography for 35-65 nm Technology Bruce Smith, Hoyoung Kang, Anatoli Bourov Rochester Institute of Technology

23 Poster Session: Exp. Tools Fluor : Frontline Lithography Using Optical Refraction, The European Initiative to Enable 157nm Lithography Judon Stoeldraijer 1, Mieke Goethals 2, Wolfgang Henke 3, Ewald Mörsen 4 1 ASML Veldhoven, 2 IMEC, 3 Infineon Technologies AG, 4 Schott Lithotec AG

24 Poster Session: Resists UV2Litho : Usable Vacuum Ultra Violet Lithography A.M. Goethals 1, R. Jonckheere 1, F. Van Roey 1, Jan Hermans 1, A. Eliat 1, K. Ronse 1, P. Wong 2, P. Zandbergen 3, M. Vasconi 4, E. Severgnini 4, W. Henke 5, C. Hohle 6, D. Henry 7, Ph. Thon 7, L. Markey 7, P. Schiavone 8, D. Fuard 8 1 IMEC, 2 ASML Veldhoven, 3 Philips Research, 4 STMicroelectronics S.r.l Agrate Brianza, 5 Infineon Technologies AG Dresden, 6 Infineon Erlangen, 7 STMicroelectronics Crolles, 8 CNRS Printing 65nm Dense Lines by Using Phase Masks at 157 nm Wavelength L.A. Wang, H. C. Chen Institute of Electro-Optical Engineeing, National Taiwan University

25 Poster Session: Resists New Silsesquioxane and Siloxane Based Resist Copolymers for 157nm Lithography V. Bellas 1, E. Tegou 1, I. Raptis 1, E. Gogolides 1, P. Argitis 1, E. Sarantopoulou 2, A.C. Cefalas 2 1 Institute of Microelectronics, NCSR Demokritos, 2 Institute of Physical and Theoretical Chemistry, NHRF Impact of Resist Absorbance on CD Control Laurent Markey 1, Peter Zandbergen 2 1 STMicroelectronics, 2 Philips Semiconductors Thermal Behavior of Dissolution Inhibitors Geunsu Lee 1, Paul Zimmerman 1, Will Conley 1, Daniel Miller 1, Charles Chambers 2, Brian Osborn 2, Shiro Kusumoto 2, C. Grant Willson 2 1 International SEMATECH, 2 Department of chemistry, University of Texas

26 Poster Session: Resists Parameter Extraction for 157nm Photoresists Will Conley 1, J. Bendik 2, Daniel Miller 3, Paul Zimmerman 4, Kim Dean 3, John Petersen 5, Jeff Byers 6, Ralph Dammel 7, Raj Sakumari 7, Frank Houlihan 7 1 Motorola assignee to International SEMATECH, 2 Dynamic Intelligence Inc. 3 International SEMATECH, 4 Intel assignee to International SEMATECH, 5 Petersen Advanced Lithography, 6 KLA-Tencor; Finle Technologies Division, 7 Clariant Corporation Fluoropolymer Resists for 157 nm Lithography Vaishali Vohra 1, Katsuji Douki 1, Xiang-Qian Liu 1, Young-Je Kwark 1, Christopher Ober 1, Will Conley 2, Daniel Miller 2, Paul Zimmerman 2 1 Department of Materials Science & Engineering, Cornell University, 2 International SEMATECH Molecular Anisotropy in 157nm Photoresist Materials Jeanette Roberts, Robert Meagley, Adam J. Schafer Intel Corporation

27 Poster Session: Resists Negative Photoresist for 157 nm Microlithography Paul Zimmerman 1*, Brian Trinque 2, Will Conley 3, Daniel Miller 4, Ralph Dammel 5, Andrew Romano 5, Raj Sakumari, Shiro Kumamoto 2, Hoang Tran 2, Matthew Pinnow 2, Ryan Callahan 2, Charles Chambers 2, C. Grant Willson 2 1 Intel assignee to International SEMATECH, 2 Departments of Chemistry and Chemical Engineering, University of Texas, 3 Motorola assignee to International SEMATECH, 4 International SEMATECH, 5 Clariant Corporation Synthesis and Properties of Noval Fluoropolymer for 157nm Photoresists by Cyclo-polymerization Osamu Yokokoji 1, Shun-ichi Kodama 1, Isamu Kaneko 1, Yoko Takebe 1, Shinji Okada 1, Yasuhide Kawaguchi 1, Shigeo Irie 2, Seiichi Ishikawa 2, Minoryu Toriumi 2, Toshiro Itani 2 1 Asahi Glass Co. Ltd., 2 Selete Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report Iqbal Sharif 1, Darryl DesMarteau 1, Will Conley 2, Paul Zimmerman 3, Daniel Miller 4, Guen Su Lee 5, Charles Chambers 6, Brian Trinque 6, Takashi Chiba 6, Brian Osborn 6, C. Grant Willson 4 1 Clemson University, Dept of Chemistry, 2 Motorola assignee at International SEMATECH, 3 Intel assignee at International SEMATECH, 4 International SEMATECH, 5 Hynix assignee at International SEMATECH, 6 Department of Chemistry & Chemical Engineering, University of Texas at Austin


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