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1 ERT CNFRS/URSI Journées Scientifiques 2007 Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni Cellules Solaires Photovoltaïques Plastiques,

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Presentation on theme: "1 ERT CNFRS/URSI Journées Scientifiques 2007 Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni Cellules Solaires Photovoltaïques Plastiques,"— Presentation transcript:

1 1 ERT CNFRS/URSI Journées Scientifiques 2007 Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni Cellules Solaires Photovoltaïques Plastiques, POMA – CNRS, Université dAngers Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni Cellules Solaires Photovoltaïques Plastiques, POMA – CNRS, Université dAngers 50 Transistors Mémoires Transistors ambipolaires

2 2 ERT CNFRS/URSI Journées Scientifiques 2007 Organic Field Effect Transistors Low temperature processing Compatibility with plastic substrates Applications : Active matrix displays Low cost logic circuits Smart cards FET Type FeRAM Nonvolatile Data Storage Nondestructive data readout Single Transistor type memory cell Unni et al., Appl Phys Lett 2004

3 3 ERT CNFRS/URSI Journées Scientifiques 2007 P(VDF-TrFE)Pentacene Pentacene / active material Polyvinylidene fluoride-Trifluoroethylene / gate insulator Gold & ITO / contacts Structure

4 4 ERT CNFRS/URSI Journées Scientifiques 2007 Experimental Details ITO coated glass slides as substrates P(VDF-TrFE) spin coated Pentacene evaporated Gold source & drain electrodes Channel length 120µm Channel width 0.5mm

5 5 ERT CNFRS/URSI Journées Scientifiques 2007 How does a MISFET works ? Dielectric - Gate Voltage CB VB EFEF Semiconductor Energy DS V ds V gs G

6 6 ERT CNFRS/URSI Journées Scientifiques 2007 Transistor characteristics of a pentacene FET with P(VDF-TrFE) as gate insulator

7 7 ERT CNFRS/URSI Journées Scientifiques 2007 |I d,sat | 0.5 vs.V g µ FET = 2.6 x cm 2 s -1 V -1 Threshold voltage = V

8 8 ERT CNFRS/URSI Journées Scientifiques 2007 How does a MFS-FET works ? Ferroelectric Vg = 0 CB VB EFEF Semiconductor Energy DS V ds V gs =0 G ++++

9 9 ERT CNFRS/URSI Journées Scientifiques 2007 Comparison of drain currents at Vg = 0, before and after writing with –50 V ON OFF

10 10 ERT CNFRS/URSI Journées Scientifiques 2007 FET ambipolaire

11 11 ERT CNFRS/URSI Journées Scientifiques 2007 Fct. Canal P Fct. Canal N

12 12 ERT CNFRS/URSI Journées Scientifiques 2007 µ e = cm 2 V -1 s -1 (1, / pure) µ h = cm 2 V -1 s -1 Chem Phys Lett 2006 Caractéristiques ON/OFF

13 13 ERT CNFRS/URSI Journées Scientifiques 2007 Composants plastiques souples, stables et reproductibles Cellules PV souples 2-3% (APL 2006)

14 14 ERT CNFRS/URSI Journées Scientifiques 2007 TITK, Rudostadt

15 15 ERT CNFRS/URSI Journées Scientifiques 2007 Fraunhofer, IZM, Munich


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