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Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 1 Front End Processes ITRS 2012 Winter Public Conference.

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Presentation on theme: "Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 1 Front End Processes ITRS 2012 Winter Public Conference."— Presentation transcript:

1 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 1 Front End Processes ITRS 2012 Winter Public Conference

2 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan ITRS FEP Sub-TWG Leadership HP MPU ASIC (Table FEP 2) –Wei-Yip Loh (US) LOP (FEP 3) –Wei-Yip Loh (US) LSTP (FEP 4) –Wei-Yip Loh (US) DRAM (FEP 5) –Ho Jin Cho (KR) Floating Gate Flash (FEP 6) –Mauro Alessandri (EU) Charge Trapping Flash (FEP 7) –Mauro Alessandri (EU) PCM (FEP 8) –Mauro Alessandri (EU) FeRAM (FEP 9) –Yukinobu Hikosaka (JP) Starting Materials (FEP 10) –Mike Walden (US) –Mike Goldstein (US) Surface Preparation (FEP 11) –Joel Barnett (US) Therm/Thin Films/Doping (FEP 12) –Wei-Yip Loh (US) Etch (FEP 13) –Tom Lii (US) CMP (FEP 14) –Darryl Peters (US)

3 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 3 Next Generation Metal Gate/High-k Stacks New High Mobility Channel Materials New Memory Materials Phase Change Memory FDSOI + III/V and Ge High µ Alternative Channel Matls 3D Devices - Formation, Doping, Stress New Structures and Materials for Transistors and Memory Advanced Memory

4 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 4 FEP Difficult Challenges Near Term Sustaining Strain Engineering - Continued effective use for increasing device performance - Application to FDSOI and Multi-gate technologies Achieving DRAM Cell Capacitance with Dimensional Scaling - Discovering robust dielectric with dielectric constant of ~60 - Finding electrode material with high work function Realizing Clean Surfaces Free of Killer Defects - No resultant pattern damage - Very low material loss (<0.1 A) Broad Adoption of High-k/Metal Gate - Introduction to full scale manufacturing for HP, LOP, and LSTP Application to advanced structures and materials - Scaling equivalent oxide thickness (EOT) below 0.8nm while maintaining acceptable electrical performance 450mm wafers - production level quantities at advanced technology generations anticipated for roadmap intersection

5 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 5 FEP Difficult Challenges Long Term Continued scaling of HP multigate device in all aspects: EOT, junctions, mobility enhancement, new channel materials, parasitic series resistance, contact silicidation. Lowering required DRAM capacitance by 4F2 cell scheme or like, while continuing to address materials challenges Continued achievement of clean surfaces while eliminating material loss and surface damage and sub-critical dimension particle defects Continued EOT scaling below 0.7 nm with appropriate metal gates Continued charge retention with dimensional scaling and introduction of new non-charged based NVM technologies

6 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan Logic Update New metrology requirements considered –USJ, 3D and new channel materials –Establishing criteria for deciding how new technology's will be incorporated as tables Interaction with PIDS to address: –Vdd and FDSOI pull-in –n-III-V and p-Ge table entries

7 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan FeRAM Update Worked with PIDS to better align the two TWGs FeRAM- related 2011 tables

8 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan 8 Continued to monitor industry activities related to 450mm development and assess impact on the Starting Materials table entries Addressed wafer flatness colorization issues Ongoing review of progress relative to FinFET (SOI-based) adoption and consideration to revisit SOI starting layer thickness table entries, as appropriate 2012 Starting Materials Update

9 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan /2013 Surface Prep Update Critical particle size driver. ½ DRAM half pitch is current driver but flash is smaller Modifying specification for AFM measurement of roughness to reflect decreased critical area size Address the difficult aspects of measuring low-k value due to damage/failure Address ESH aspects of III-V cleans (generation of phosphine, arsine gases) Include anti-stiction drying for pattern collapse in Potential Solutions table (typically a MEMS issue)

10 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan Etch Update Gate CD variation updates –With grid design rule widely used at gate layer, through pitch Lgate variation item is removed from total gate CD variation calculation –Replacement gate high-K last dummy gate stack removal induced Lgate variation was added into total gate CD variation calculation –Advanced gate etch chamber clean helped to improve wafer to wafer and lot to lot Lgate variations –Gate LWR performance is marginal from 2012 LWR becomes largest portion of gate CD variation. High power plasma UV resist treatment is a potential LWR improvement method

11 Work in Progress – Do not Publish - FEP ITRS Winter Public Conference 2012, Taiwan CMP Update Addressed replacement metal gate (RMG) –Obtained metrics from end users for RMG (Poly- open Process and metal polish) –Revised RMG table –Added text for RMG post-CMP cleans –Revised challenges


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