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Gate Control of Spin Transport in Multilayer Graphene By H. Goto et al. Kun Xu
Advantages Advantages of spin over charge: Easily manipulatable with externally applied magnetic fields Long coherence/relaxation time
GMR Giant magnetoresistance Sandwich structure FNF Spin valve (HDD read/write heads) The 2007 Nobel Prize in physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR
Disadvantages Existing spin devices do not amplify signals
Datta-Das Device Current modulated by the degrees of precession in electron spin introduced by the gate field
Spin-based quantum Computer Qubit – intrinsic binary units Quantum entanglement Single electron trapped in a quantum dot
Spin transport in graphite based devices Carbon nanotubes Graphene Multilayer graphene (MLG) Weak spin-orbit and hyperfine interaction Gate control of spin conduction
Device Structure MLG Exfoliated from kish graphite 2.5nm thick, about 7 layers (by SEM/AFM) Doped Si/SiO2 substrate
Device Structure 50nm Co electrodes 200nm/330nm Separated by L=290nm
Device Structure Cr/Au nonmagnetic electrodes 5nm/100nm thick
Measurement Four terminal lock-in technique 4.2K Excitation current of 1.0 uA, 119Hz Back gate bias
Spin Signal: R s Rs=Rp-Rap Proportional to R when FN interfaces are opaque Proportional to 1/R when FN interfaces are transparent
Spin Signal: R s
Spin relaxation length
MLG Graphene: um at room temperaure, may stay the same at low temperature
Electron has : Mass Charge Spin Spintronics=spin based electronics information is carried by spin not by charge ferromagnetic metallic alloy based devices.
The Story of Giant Magnetoresistance (GMR) From Laboratory to Hard Drive Anne Reilly Grants Development UHCL Adjunct Professor of Physics.
Spintronics: How spin can act on charge carriers and vice versa Tomas Jungwirth University of Nottingham Institute of Physics Prague.
Quantum Confinement in Nanostructures Confined in: 1 Direction: Quantum well (thin film) Two-dimensional electrons 2 Directions: Quantum wire One-dimensional.
Giant Magnetoresistance Zachary Barnett University of Tennessee 3/11/08.
1 Magnetic Properties of Materials. 2 Other Parameters … force acting on a material … permeability (similar to permittivity: = 1 + P/[ 0 E]) … magnetic.
Memory Storage in Near Space Environment Collin Jones University of Montana Department of Physics and Astronomy.
Ravi Sharma Co-Promoter Dr. Michel Houssa Electrical Spin Injection into p-type Silicon using SiO 2 - Cobalt Tunnel Devices: The Role of Schottky Barrier.
EE698A Advanced Electron Devices Magnetic sensors and logic gates Ling Zhou EE698A.
Spintronics and Graphene Spin Valves and Giant Magnetoresistance Graphene spin valves Coherent spin valves with graphene.
Relaziation of an ultrahigh magnetic field on a nanoscale S. T. Chui Univ. of Delaware
Spintronic Devices and Spin Physics in Bulk Semiconductors Marta Luengo-Kovac June 10, 2015.
Adsorbate Influence on the Magnetism of Ultrathin Co/Cu Systems David Gunn.
AN INTRODUCTION TO SPINTRONICS BY: SAMIR KUMAR 10M601 M.TECH 1 ST YEAR Center for Materials Science and Engineering NATIONAL INSTITUTE OF TECHNOLOGY HAMIRPUR.
What are the magnetic heterolayers good for Basic components of modern spintronic devices Conventional electronics has ignored the spin of the electron.
Quantum Dots and Spin Based Quantum Computing Matt Dietrich 2/2/2007 University of Washington.
グラフェンにおけるスピン伝導・ 超伝導近接効果 「グラフェン・グラファ イトとその周辺の物理」研究会 （筑波大） Akinobu Kanda University of Tsukuba, Japan Collaborators U. Tsukuba H. Goto, S. Tanaka,
Magnetism in ultrathin films W. Weber IPCMS Strasbourg.
Topics in Condensed Matter Physics Lecture Course for graduate students CFIF/Dep. Física Spin-dependent transport theory Vitalii Dugaev Winter semester:
Philip Kim Department of Physics Columbia University Toward Carbon Based Electronics Beyond CMOS Devices.
Ferromagnetic Quantum Dots on Semiconductor Nanowires Rouin Farshchi EE235 3/7/07 D. G. Ramlan et. al., Nano Letters 6, (2006) 1.
Part 1. Background What are polymer electronics? What makes polymer so suited for electronic applications? Polymer Devices Applications and Areas of Research.
Quantum Dots Arindam Ghosh. Organization of large number of nanostructures – scalability Utilize natural forces Organic, inorganic and biological systems.
Classical Control for Quantum Computers Mark Whitney, Nemanja Isailovic, Yatish Patel, John Kubiatowicz U.C. Berkeley.
Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.
Chun-Chieh Lu Carbon-based devices on flexible substrate 1.
Department of Electronics Nanoelectronics 18 Atsufumi Hirohata 12:00 Wednesday, 11/March/2015 (P/L 006)
Graphene & Nanowires: Applications Kevin Babb & Petar Petrov Physics 141A Presentation March 5, 2013.
Superconducting Qubits Kyle Garton Physics C191 Fall 2009.
Seminarul National de Nanostiinta si Nanotehnologie MAGNETIC NANOSTRUCTURES, MULTILAYERS with GIANT MAGNETO-RESISTANCE (GMR) and TUNNEL MAGNETO-RESISTANCE.
1 Motivation: Embracing Quantum Mechanics Feature Size Transistor Density Chip Size Transistors/Chip Clock Frequency Power Dissipation Fab Cost WW IC Revenue.
Laterally confined Semiconductor Quantum dots Martin Ebner and Christoph Faigle.
Nanoscience and ICT. What do the Apollo mission spacecraft to the moon and a washing machine have in common? Same amount of computing power! Technology.
Science and Technology of Nano Materials snistforum.com.
Epitaxial Graphene: a New Platform for Carbon Electronics Materials Development State of the Art Education and Diversity The GT MRSEC has been developing.
Spintronics. Properties of Electron Electron has three properties. Charge Mass Spin.
Fatemeh (Samira) Soltani University of Victoria June 11 th
Quantum Interference in Multiwall Carbon Nanotubes Christoph Strunk Universität Regensburg Coworkers and Acknowledgements: B. Stojetz, Ch. Hagen, Ch. Hendlmeier.
Reading and manipulating valley quantum states in Graphene Arindam Ghosh Department of Physics Indian Institute of Science Atin Pal et al. ACS Nano 5,
In Memory of H. C. Siegmann - the father of modern spin physics Joachim Stöhr SLAC.
Single Electron Devices Vishwanath Joshi Advanced Semiconductor Devices EE 698 A.
Observation of Negative Differential Resistance Jiasen Ma Supervisor: Philippe Guyot-Sionnest Due to resonant tunneling the transmission coefficient gets.
Materials Research Science and Engineering Center William H. Butler University of Alabama-Tuscaloosa, DMR Update: January, 27, 2005 Commercialization.
Graphene Semiconductors David Brown Student ECE Department University of Utah October 29, 2009.
Image courtesy of Keith Schwab.
1 Recent studies on a single-walled carbon nanotube transistor Reference ： (1) Mixing at 50GHz using a single-walled carbon nanotube transistor, S.Rosenblatt,
Motivation There has been increasing interest in the fabrication and characterization of 1D magnetic nanostructures because of their potential applications.
Gated Hybrid Hall Effect (HHE) devices on silicon Pratyush Das Kanungo, Alexandra Imre, Wu Bin, Alexei Orlov, Greg Snider, Wolfgang Porod Dept of Electrical.
EE 666 Advanced Semiconductor Devices All About Hard Drives Lili Ji Lili Ji
Improvement of Infrared Lights Sensitivity on PZT EMITER Daisuke Takamuro, Hidekuni Takao, Kazuaki Sawada and Makoto Ishida.
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