Presentation on theme: "Recent Progress for HTS Power Technology R&D in Korea"— Presentation transcript:
1Recent Progress for HTS Power Technology R&D in Korea IEA HTS Programme ExCo meeting20-21 May 2010, Stockholm, SwedenRecent Progress for HTS Power Technology R&D in Korea- HTS wire, Cable, and FCL -Ok-Bae Hyun/KEPCO
2Commercialization of CC R&D status of HTS CCCommercialization of CC~ km-L, 4mm-wHigh Throughput ProcessHigh performance CC20 m – Ic : 1 kA/cm targetedEDDCProduction tech.1 km – Ic : 500 A/cm targetedR2R RCESUNAM
3Fabrication processes for each layer TypicalThicknessR&D (KERI/SuNAM)Pilot line (SuNAM)ProcessSpeedCu~ 20 μmElectro-plating240 m/h300 ~600 m/hAg2~ 3 μmSputt.10 m/h360 m/hSmBCO(GdBCO)~ 2 μmEDDC100 m/hR2R RCELMOPLD50 m/hEpi-MgO~ 50 nmEvap.70 m/hTextured-MgO~ 10 nmIBADY2O3~ 7 nm500 m/hAl2O3200 m/hHastelloy~ 70 μmElectro-polishing90 m/h720 m/hEDDC : Evaporation using Drum in Dual Chamber (Batch type RCE)Evap. : Evaporation with e-beam.Production speed is 4 mm wide equivalent
4Fabrication of 100 m long- SmBCO CC by IBAD-EDDC (KERI) CuBaSm354540655055601030201525Compositional ratio.100mDifferentialpumpingBufferedSubstrateO2Halogen heater~15 mTorrSmBCO~10-5 TorrCryoPumpTMPSm (SG)Ba (LG)Cu (LG)This is typical results obtained from our EDDC system. This is the tape which was wound on the drum after the deposition of SmBCO. We confirmed high Ic was obtained in the composition of Ba poor and Cu-rich compared to stoichiometric composition. We investigated microstructure at end parts of left and right. As shown here, the surface is very clean and dense. C-axis growth is also confirmed in XRD analysis. The in-plane texture, Delta phi of the obtained SmBCO layer is 4 degree.100 m
5Ic properties of EDDC – SmBCCO CCs 20082009Short tape513 A/cm-w@ 0.7 m638 Aemail@example.com mLong tape325 A/cm-w@20 m187 A/cm-w@68 mIc x L6,500 Am12,716 AmThis graph shows Ic distribution of long SmBCO samples fabricated by EDDC. In 2008, high Ic was obtained but as you see here many critical defects were observed.In 2009, Average Ic level was enhanced and the number of critical defects was reduced. So, we tried to improve the Ic uniformity but we found Ic level was decreased.As a highest critical current of SmBCO we obtained 638 A/㎝-w for 3 micron thick sample.2008 CC :High Ic was obtained but many critical defects were existed.2009 CC :Ic was enhanced and the number of critical defects was reduced.Ic was decreased but its uniformity was improved in 60 m long section.
6Jc-B-Θ property of EDDC - SmBCO CCs We evaluated in-field property and angular dependency of Ic for our SmBCO samples. As a comparison with commercial YBCO CC, our SmBCO exhibits higher in-field property in these temperature conditions. In our EDDC process, we did not dope any material for artificial flux pinning. But we found dominant enhancement of c-axis flux pinning as shown here.Normalized magnetic field(H//c) dependence of critical current density( Jc)Jc-B property of EDDC-SmBCO was found to be superior compared with commercial YBCOEDDC-SmBCO without any doping shows c-axis flux pinning effect but its relationship with microstructure is not clear.
7Motor & tension control Continuous High Speed Transport Ic Measurement (HSTM) systemCurrent control to keep the measured voltage as critical voltage criterionReel to reel system & DSP control / High speed Ic meas. > 400 m/hPIDACVref(Critical voltage criterion)Current for P/S to HTS conductorK*V1/n+V:measure voltageP/S current reference critical current(Linearization of the control voltage)Current lead-HTS conductorMotor & tension controlVoltage tapCurrent tapIn the practical production line of cc, we think speed up of performance test is also very important. Recently we developed high speed transport Ic measurement system.Main principle of this system is that we control the current to keep the measured voltage as critical voltage criterion.Conventional R2R Transport Mes.Conventional R2R hall sensor Mes.
8New non-contact type Ic measurement system Gap(between hall sensor and superconducting layer)dependency of Ic is smaller for new systemCalibration pointApplied magnetic fieldSuper currentflowCC tapeI+I-XZYCross sectional viewI+I-NoiseSo, we recently developed new system based on ampere law. The principle is line intergration of magnetic field for two loops around the tape crosssection. We found실제 자장을 측정하는 구간은 그림에서 파란색 화살표, 제일 왼쪽끝 자장은 적분구간을 크게하면 거의 제로가 된다. 핵심은 중심부에서 Bz(수직자장)을 구하는 것이다.(특허)기존의 방법은 h(초전도층과 센서사이 간격)에 민감하게 변하나 새로운 방법은 적분 루프안에 전류량의 절대값을 측정하기 때문에 원리적으로는 간격에 의존하지 않는다.Using Ampere lawDefine A= line integration of magnetic field of left loopB= line integration of magnetic field of right loopFrom the scanning magnetic field, Ic= 78.2 AFrom the conventional 4 probe method Ic= 84 AThe deviation is caused by the noise of data
9Properties of IBAD template (SuNAM) In-plane texture of buffer layersMulti-turn IBAD system with max. spool size ~ 2 km. Df of MgO (220) in production : 7 ~ 8 o .IBAD-MgOHomo-epiMgO
10R2R – RCE system by SuNAM Heater Use of inexpensive metal source. High rate deposition ( > 10 nm/sec)Process speed : < ~ 600 m/hr.Optimization underway.E-gun (30 KW)29 Multi-turn R2RQCMMetal tapeY, SmCuBacomputerFeedback programSource for metal evaporation : 30 kw pierce e-gunSubstrate transportation : Multi-turn R2R system, more than 20 turns
11Ic properties of GdBCCO CCs by R2R-RCE SUNAMMin Ic : 220 A/cm-wAve Ic : 298 A/cm-wMax Ic : 340 A/cm-wMin. Ic : 265 A/cm-wL : 120 mMeasured by HSTMV-V distance : 60 cmGdBCO Surfaceafter annealing
12High Critical Current GdBCO CCs by R2R-RCE SUNAM
13REBCO CCs by EDC and R2R-RCE Ic of 637 A/cm was achieved for 3 μm-thick EDDC-SmBCO CC. But, critical defects due to de-lamination were observed for long CC tapes.High performance Ic measurement systems were developed.New hall sensor measurement system using Ampere lawHigh speed transport measurement (HSTM)systemR2R Pilot line for the production of CC was installed in SuNAM Co.De-lamination problem was resolved for R2R-RCE CCsR2R-RCE process for high & uniform Ic of GdBCO CCs was establishedMin. Ic of 220 A/cm-w at 77 K for 200 m-long CCHighest Ic of 510 A/cm-w at 77 K for short sample
14Development of HTS Cable HTS Cable by LS CableDevelopment of HTS CableHTS Cable of LS CableDAPAS Project in Korea- Project period : 2001~2011- Total budget : $146million(Gov. : $100million / Industry : $46million)- Participant : LS Cable, KEPCO, KERI22.9kV 50MVA- Location : KEPCO’s I-cheon Substation- Development : 2008 ~ 2011- Length : 500m- Accessory : 2 Termination, 1 Joint,Cooling system- Equal to 5 circuit of Cu cable22.9kV154kV 1GVA- Type test, 2010(Gochang Power Testing Center)- PQ test, 2011- Real grid application : 2012 ~- Equal to 6-8 circuit of Cu cable154kV22.9kV 50MVA154kV 1GVAAccessory** DAPAS : Development of Advanced Power system by Applied Superconductivity tech.)
15Real-grid application HTS Cable by LS Cable - milestone22.9kV HTS Cable has been developed and new project deploying on Real-Grid started .154kV 1GW HTS power cable is under development till (Type Test) / 2011 (PQ Test)Milestone20042005200620072003200220011st Phase2nd PhaseFundamentalDesignSingleCore 30m50MVA/30m3-Core50MVA/100mFab.Evaluation.1,000MVA2008200920103rd PhaseEvaluationType test22.9kV 50MVA, 500mReal-grid application(I-cheon Substation)DAPAS(MEST)Year154kV22.9kV1ST Proto TYPENEWProject(MKE)ApplicationTypeTestPQ
18154 kV HTS cable154kV 1GVA- Type test, 2010 (Gochang Power Testing Center)- PQ test, 2011- Real grid application : 2012 ~- Equal to 6-8 circuit of Cu cable- World best power transmission performance acquisition (1GVA)A 154kV 1GVA HTS termination was designed, manufactured, and successfully tested in accordance with IECExtra DC voltage test was performed successfully
19Withstand Voltage Test (14 kV Termination) Test ItemTest RequirementResultAC Voltage test with LN2 LevelLevel 1(General Point)-Interface atUpper of SpacerAC225kV/15minPassImp.±750kV/10timesImp.±800kV/3timesImp.±850kVImp.±900kVLevel 2(Weak Point)Middle of SpacerDC Voltage testDC 220kV/10minDC300kV/10min
20Peak current limitation Hybrid SFCL - evolutionSuperconductorHTS + SWHybrid (1/2 Hz limiting)Hybrid (1/2 Hz non-limiting)PCL HybridPossibly useful at medium voltagesHTSReactorS/WHTSReactor/LimiterVISBDCHTSPower fuse?Peak current limitationReactor/LimiterVISBDCHTS
2114kV/12.5kArms, 1 phase fault test Fast switch enabling a FCL14kV/12.5kArms, 1 phase fault teststep 1 : fast fault detectionstep 2 : triggering mechanical fast switchimmediately through the controller,by a capacitor bank energystep 3 : initiating to open and generate arcingof the contact at the same timestep 4: interruption of main circuit when currentbecome zerostep 5 : commuted to parallel current limitingresistor
22FCL – Peak current limiting type Concept of the PC-FCLDouble line commutations 2 stage current limitationS1 to limit the fault current for the first ½ cycle upon faultS2 to limit the fault current after the first ½ cycleReducing the voltage stress of the S1 switch through a parallel resistorPeak control(mode-1)Type 2(mode-2)Mode 1+2
23Real circuit for the PC-FCL Peak current controlled FCL by semiconductor SWsSimulated waveReal circuit for the PC-FCLUse one or multiple module of an IGBT and a resistor in parallel
2414kV/12.5kArms, 1 phase fault test (S2) Mechanical fast switch Peak current controlled FCL14kV/12.5kArms, 1 phase fault testCTCLRcontroller(S2) Mechanical fast switchFast fault detectorPCRRogowski coilDriver(S1) Solid state module