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Hang Hu 1, Shi-Jin Ding 1, HF Lim 1, Chunxiang Zhu 1, M.F. Li 1, 2, S.J.Kim 1, XF Yu 1, JH Chen 1, YF Yong 1, Byung Jin Cho 1, D.S.H. Chan 1, Subhash C.

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Presentation on theme: "Hang Hu 1, Shi-Jin Ding 1, HF Lim 1, Chunxiang Zhu 1, M.F. Li 1, 2, S.J.Kim 1, XF Yu 1, JH Chen 1, YF Yong 1, Byung Jin Cho 1, D.S.H. Chan 1, Subhash C."— Presentation transcript:

1 Hang Hu 1, Shi-Jin Ding 1, HF Lim 1, Chunxiang Zhu 1, M.F. Li 1, 2, S.J.Kim 1, XF Yu 1, JH Chen 1, YF Yong 1, Byung Jin Cho 1, D.S.H. Chan 1, Subhash C Rustagi 2, MB Yu 2, CH Tung 2, Anyan Du 2, Doan My 2, PD Foo 2, Albert Chin 3, Dim-Lee Kwong 4 1 SNDL, Dept. of ECE, National Univ. of Singapore, Singapore, 2 Institute of Microelectronics, Singapore, 3 Dept. of Electronics Eng., National Chiao Tung Univ., Taiwan 4 Dept. of Electrical & Computer Eng., Univ. of Texas, Austin, TX 78712, USA High Performance ALD HfO 2 -Al 2 O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications Silicon Nano Device Laboratory / Dept of ECE

2 Outline of Presentation Motivation Experiment Results and Discussion I.RF characterization II.DC properties III.Reliability and lifetime IV.High-κ MIM capacitors comparison Conclusions

3 Year of Production Analog capacitor Density (fF/µm 2 ) Voltage linearity (ppm/V 2 ) 100 Leakage (fA[pFV]7 RF bypass capacitor Density (fF/µm 2 ) Voltage linearity (ppm/V) 1000 The International Technology Roadmap for Semiconductors, 2002 Edition Mixed signal MIM capacitor requirement Motivation

4 SiO 2 and Si 3 N 4 MIM capacitors usually provide low capacitance density of ~1 fF/μm 2. High-k dielectrics needs to be used for future MIM application according to ITRS roadmap. HfO 2 is a promising high-k material for MIM capacitor. However fast oxygen diffusion. Al 2 O 3 have the advantage of large band gap, low oxygen diffusivity, however only middle k value. Motivation

5 4 μm SiO 2 deposition on Si substrate for isolation 4 μm SiO 2 deposition on Si substrate for isolation Bottom electrode deposition (Ta/TaN) Bottom electrode deposition (Ta/TaN) Transmission line formation Transmission line formation Dielectric deposition by atomic layer deposition (ALD) Dielectric deposition by atomic layer deposition (ALD) TEM photo of 13 nm laminate film Experiment Al 2 O 3 (1nm)/HfO 2 (5nm) laminate Al 2 O 3 as electrode contacting layers 13, 31, and 43 nm used in our work

6 Post deposition anneal (420 o C) Post deposition anneal (420 o C) Contact hole etching Contact hole etching Top metal deposition (TaN/Al) and patterning Top metal deposition (TaN/Al) and patterning MIM structureDummy device Final Device structure for characterization Experiment

7 Capacitor modeling in RF regime Equivalent circuit diagram for MIM capacitor modeling in RF regime I. RF capacitor model

8 I. S-parameter simulation Measured and simulated S-parameters for laminate MIM capacitors by IC-CAP using SPICE3 simulator. 13 nm31 nm43 nm

9 I. High frequency response High frequency response of laminate MIM capacitors from 50 MHz to 20 GHz

10 I. Cap. versus frequency The frequency dependence of capacitance density of laminate capacitors (k ~19).

11 II. J-V characteristics Typical J-V characteristics of laminate MIM capacitors

12 Leakage obtained at different temperatures for 13 nm MIM capacitor (normalized to J RT : leakage measured at room temperature) II. J-V characteristics

13 Conduction mechanisms of 13 nm laminate MIM capacitor, showing Pool-Frankel conduction at high field. II. Conduction mechanism

14 Quadratic (α) and linear (β) VCCs of laminate MIM capacitors with thicknesses of 13, 31 and 43 nm II. CV characteristics

15 Thickness dependence of quadratic VCC (α) for laminate MIM capacitors. The implication is significant for the scaling of the high-k dielectrics. II. CV characteristics

16 Frequency dependence of quadratic VCC α for laminate MIM capacitors II. CV characteristics

17 Quadratic VCC as a function of stress time. The inset shows time dependence of linear VCC. II. CV characteristics

18 Time dependence on VCCs and leakage, under stress condition. The recovery of leakage and VCCs may further prolong lifetime under AC condition. II. CV characteristics

19 TCC values for laminate MIM capacitors with three different thicknesses II. TCC properties

20 Stress time dependence of leakage for a fresh device up to 2000s. The device was re-stressed and re-measured after interrupting stress for 10 hours. III. Constant voltage stress

21 Breakdown and leakage characteristics of 13 nm laminate MIM capacitors as a function of stress time. III. Breakdown characteristics

22 Life time projection of 13 nm laminate capacitor, using 50% failure time criteria, the extrapolated voltage for 10 years lifetime is 3.3 V. III. Lifetime projection

23 Reference[1][1][2][2][3][3][4][4][5][5]This work DielectricHfO 2 (ALD)Ta 2 O 5 AlTaO x (PVD) Ta 2 O 5 (CVD) Tb doped HfO 2 (PVD) Hf/Al laminate (ALD) Capacitance density (fF/µm 2 ) Leakage (A/cm 2 ) 5.7×10 2×10 1× ×10 VCC 607 ppm/V 853 ppm/V ppm/V 3580 ppm/V ppm/V ppm/V 475 ppm/V ppm/V 2667 ppm/V ppm/V 1990 ppm/V 2 TCC (ppm/ o C)~ [1]. XF Yu et al. EDL. Vol. 24, [2]. Tsuyoshi. I et al. IEDM 2002, p.940. [3]. C. H. Huang, et al. MTT-S [4]. Y. L. Tu. et al VLSI symp. 2003, p.79. [5]. S.J. Kim et al. VLSI symp. 2003, p.77. IV. High-κ MIM cap. comparison Laminate capacitor is among one of the best for RF capacitor application.

24 Conclusions High performance HfO 2 /Al 2 O 3 laminate MIM capacitors High performance HfO 2 /Al 2 O 3 laminate MIM capacitors have been demonstrated for the first time. have been demonstrated for the first time. The ALD laminate MIM capacitors exhibit high C The ALD laminate MIM capacitors exhibit high C density, superior dielectric stability up to 20 GHz, density, superior dielectric stability up to 20 GHz, low leakage current, and promising reliability. low leakage current, and promising reliability. For 13 nm laminate MIM capacitor C density ~12.8 fF/μm 2 up to 20 GHz For 13 nm laminate MIM capacitor C density ~12.8 fF/μm 2 up to 20 GHz ~ 211 ppm/V, Leakage ~ 7.45 nA/cm 2 at 2 V Meets all requirements for RF bypass capacitor ~ 211 ppm/V, Leakage ~ 7.45 nA/cm 2 at 2 V Meets all requirements for RF bypass capacitor

25 Acknowledgment This work was supported by Institute of Microelectronics (Singapore) under Grant R and the National University of Singapore under Grant R


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