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Surface modification of tungsten due to carbon ion implantation A. Martinavičius.

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Presentation on theme: "Surface modification of tungsten due to carbon ion implantation A. Martinavičius."— Presentation transcript:

1 Surface modification of tungsten due to carbon ion implantation A. Martinavičius

2 Introduction The first wall of future fusion devices will be made from the materials W, C and Be. The W tiles in the divertor chamber are exposed to high heat and carbon impurity fluxes which will lead to high C concentrations in the W.

3 Schematic view of model Target Not all atoms are immediately sputtered. Some atoms are activated and relocate. Other atoms after relocation also are sputtered.

4 Model 123K123K I i – flux of arriving ions, Y i – sputtering yield α ij – sticking coefficient

5 Calculations K. Krieger, J. Roth / J. Nucl. Mater. 290-293 (2001) 107-111 C+C+ Y W = 0.37Y C = 0.34α CW =0.61α CC =1α WW =?α WC =? C+C+ Y W = 0.37Y C = 0.34α CW =0.61α CC =0.8α WW =0.4α WC =0.3 CH 3 + Y W = 0.37Y C = 0.68α CW =0.61α CC =1α WW =?α WC =? CH 3 + Y W = 0.37Y C = 0.68α CW =0.61α CC =0.72α WW =0.5α WC =0.4

6 Calculations (2)

7 Diffusion data D = 0 m 2 /s, T = 3.66 (10 3 K -1 ) D = 5 10 -23 m 2 /s, T = 1.29 (10 3 K -1 ) D = 1.5 10 -22 m 2 /s, T = 1.03 (10 3 K -1 ) D = 5 10 -21 m 2 /s, T = 0.93 (10 3 K -1 )


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