Presentation on theme: "1 Transfer Impedance as a Measure of the Shielding of Seams & EMI Gasketed Joints Dr. Brett Robinson Robinson Enterprises Chino, California www.robinsonsenterprises.com."— Presentation transcript:
1 Transfer Impedance as a Measure of the Shielding of Seams & EMI Gasketed Joints Dr. Brett Robinson Robinson Enterprises Chino, California IEEE/EMC 2004 – Transfer Impedance as a Measure of the Shielding of Seams & EMI Gasketed Joints- All rights reserved Rev. 6/11/04
2 Transfer Impedance Theory Electromagnetic Leakage via Seams (and Gasketed Joints) in Shielded Enclosures occurs primarily as a result of currents which cross the seam. Such crossing cause a voltage to appear on the far side of the seam. Electromagnetic Leakage via the seam is directly proportional to this (transfer) voltage. In shielding Theory the seam is characterized in terms of its Transfer Impedance as follows: Z T = V / J S Z T = Transfer Impedance of Seam (Ohm-meters) V = Transfer Voltage (Voltage across Seam) J S = Density of Current which crosses the Seam (A/m)
3 A radiated electromagnetic (EM) force field is generated by the action of driving a current through a wire. The figure below represents a sending/receiver circuit on a PC card above a ground plane. Figure 1: PC Card Trace The EM Wave generated by the signal on the PC card trace is similar to a wave generated by an electric dipole antenna. i.e., the impedance of the wave (E/H) is the same.
4 The EM Wave generated by an Electric Dipole Antenna is best illustrated using parallel plates as shown below. Figure 2: Generation of EM Wave The electrons in the top plate are transferred to the bottom plate by a voltage source. The field between the plates is called displacement current in Amps/m 2 The displacement current (in Amps/m) creates an Electromagnetic Wave which consists of an E and H field parallel to the displacement current.
5 Figure 3: Wave Impinged on Gasketed Joint E T Z T J S / l (V/m) l = R (meters) H T E T /377*2 R (A/m) R < /2 H T = E T / 377 (A/m) R /2 Z T = Transfer Impedance of Joint (m) J S = Surface Current Density (A/m) conductive barrier JSJS EIHIEIHI ETHTETHT gasketed joint J S = H I R l
6 Figure 4: EMI Gasketed Maintenance Cover J S = Current due to Wave Impinged on Barrier e = Voltage across Gasket = J S Z T Z T = Transfer Impedance of Seam or Gasketed Joint (m) E T 2e / l V/m) l R (meters) H T E T /(377*2 R) (A/m) R < /2 H T = E T / 377 (A/m) R /2
7 Figure 4: Example Let E I = Ghz H I = 2.65 A/m J S = 2.65 A/m Z T = 1m-meters e = 2.65 x e = 5.3 x R = 1 meter E T 5.3 x / =.0017 V/m H T.0017/377 = 4.48 x A/m Value of using Transfer Impedance of a Seam or Gasketed Joint
8 Figure 4: Example Continued Shielding Effectiveness SE= E I /E T = 1000/.0017 = 5.88 x 10 5 SE = 20 log (5.88 x 10 5 ) = 115 dB Shielding Quality SQ = Z T / Z W = / 377 = 2.65 x = 111 dB Shielding Effectiveness vs. Shielding Quality
9 Figure 4: Example Continued Let E I = Ghz H I = 2.65 A/m J S = 2.65 A/m Z T = 1m-meters e = 2.65 x = c/f = 3 x 10 8 /2 x 10 9 =.15 m c = speed of light E B e/ l = 2.65 x /.08 =.0331 V/m H B E B /377 l H B =.0331(.15)/ x A/m EIHIEIHI l = 8 cm (.08 m) wire bundle e Induced Fields into Inside Maintenance Cover Compartments
10 Figure 4: Example Continued Let J S = 10,000 A (Lighting Strike) e = 10,000 x = 10 Volts E B =10/.08 = 125 V/m Assuming rise time = 10 s H B 125 /377(.08) 32 x 10 3 meters H B 131 x 10 3 A/m EIHIEIHI l = 8 cm (.08 m) wire bundle e Induced Fields into Wire Bundle due to Lightning Strike
11 Input power (from 50 source) comes into the Input connector and is terminated into a 50 resistor that makes contact with the contact plate. The Input Current (I I ) associated with the power flows through the gasket under test and returns to the input source via the base plate. The voltage drop (Output Voltage V O ) is measured by a 50 receiver attached to the output connector. Figure 5: Transfer Impedance Test Fixture
12 Figure 5: Transfer Impedance Calculations Z T = (V O /I I )L G Z T = V O – I I + L G (dB) I I = V I /50 I I = V I – 20log50 (dB) I I = V I –34 (dB) Z T = V O – [V I -34] + 20log G L (dB) & V I = 0 (dBm) Z T = V O log G L (dB) I I = Input Current (Amps) L G = Length of Gasket (m) V I = Input Voltage (dBm) V O = Output Voltage ( dBm)
13 Figure 6: Shielding Quality Test Data Nickel Plated Chem Film Plated Tin Plated Tin Plated EMI Gaskets against Plated Aluminum Joint Surfaces Stainless Steel EMI Gaskets against Plated Aluminum Joint Surfaces Nickel Plated Chem Film Plated Tin Plated
14 Figure 6: Shielding Quality Test Data Stainless Steel EMI Gaskets against Nickel Plated Joint Surfaces Groove Mounted Flange Mounted Nickel Plated Chem Film Plated Tin Plated Stainless Steel EMI Gaskets against Plated Aluminum Joint Surfaces (repeated)
15 Figure 7: Shielding Quality of Various EMI Gaskets
17 Figure 9: Shielding Quality of Gasketed Segments 1a 2a 1 – 3/8 Tin Plated Gasket a) on 7 inch centers b) on 4.75 inch centers c) on 2.5 inch centers 2 – 3/8 Stainless Steel Gasket a) on 7 inch centers b) on 4.75 inch centers c) on 2.5 inch centers 1b 1c 2b 2c
18 Summary Transfer Impedance Test Data provides an accurate measure of the shielding obtainable from EMI gaskets as applied to various joint surfaces. Transfer Impedance Testing can also be used to assess the degradation of the shielding due to exposure to moisture and salt fog environments.
19 Selected References 1.George Kunkel, Joseph E. Butler, & Louis A. Messer, Guest Editorials; Testing of EMI Gaskets, EMC Technology, January, March, May George Kunkel, Lightning Induced Electromagnetic Fields into Aerospace Vehicles, Evaluation Engineering, August George Kunkel, Testing the Shielding Quality of EMI Gaskets and Gasketed Joints - A Demonstration, IEEE/EMC 1994 Symposium. 4.George Kunkel, Electromagnetic Leakage Through Seams and Gasketed Joints – A Demonstration, IEEE/EMC 1996 Symposium.
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