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Mohamed G. Ahmed, Kyoungrok Cho, and Tae-Won Cho College of Electrical and Computer Engineering Chungbuk National University, Republic of Korea Memristance and Memcapacitance Modeling of Thin Film Devices Showing Memristive Behavior

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Outline Introduction Periodic Table of Circuit Elements Circuit Elements with memory Overview of different fabricated memristors Different behavior characteristics Memristor Modeling History Proposed Memristance Model Capacitance of different junctions Proposed behavioral memcapacitance model Conclusions 2

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Oxygen deficiencies Introduction 3 D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp , 2008

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Periodic Table of Circuit Elements 4 Leon Chua, Nonlinear Circuit Foundations for Nanodevices, Part I The Four-Element Torus, Proceedings of IEEE, vol. 91, 11, Nov. 2003

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Circuit Elements with memory 5 Massimiliano Di Ventra et al., Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors, Proceedings of IEEE, vol. 97, 10, 2009

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Overview of different fabricated memristors MaterialTop Metal Bottom Metal RonRoffYear AlN (Aluminum nitride) Cu (Copper) Pt (Platinum) ~10 3 ~ AlO (Aluminum Oxide) Ti (Titanium) Pt (Platinum) ~10 3 ~5x BiFeO 3 AgPt ~ ZrO 2 CuPt Cu:SiO 2 WCu4*10 4 6x Al 2 O 3 :RuNCsTaNPt2005x Yb 2 O 3 NiTaN

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Memristive Behavior of different fabricated memristors 7 Leon Chua, Resistance switching memories are memristors, Applied Physics A, 102, 2011

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Variations in Memristor Behavior Behavior Variations StructureSpacingMaterials 8

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Memristor Modeling History 9 D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp , 2008 D. B. Strukov and R. S. Williams, "Exponential ionic drift: fast switching and low volatility of thin-film memristors," Applied Physics A, vol. 94, pp , 2009

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Memristor Modeling History (Cont.) 10 Kamran Eshraghian et al., Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation, Proceedings of the IEEE, 2012

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Logarithmic Behavior of memristance modeling PaperLogarithmic behavior Strukov et al., Applied Physics A, 94, 2009 Drift velocity – applied voltage Hasegawa et al., Advanced Materials, 4, 2012 Channel length – junction current Hino et al., Sci. Technol. Adv. Mater., 12, 2011 Channel length – junction current Switching time – applied voltage Pickett et al., Journal of applied physics, 106, 2009 Channel length – junction current Yang et al., Nature Nanotechnology, 3, 2008 Junction current – applied voltage Channel length – applied voltage 11

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Memristance Model 12 [8] Feng Miao et al., Force modulation of tunnel gaps in metal oxide memristive nanoswitches, APPLIED PHYSICS LETTERS 95, , 2009 [16] Kamran Eshraghian et al., Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation, Proceedings of the IEEE, 2012

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Proof of memcapacitance in memristors 13 Xianwen Sun, Guoqiang Li, Li Chen, Zihong Shi and Weifeng Zhang, Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells, Nanoscale Research Letters 2011, 6:599

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Proof of memcapacitance in memristors 14 Jie Sun, Erik Lind, Ivan Maximov, and H. Q. Xu, Memristive and Memcapacitive Characteristicsof a Au/Ti–HfO2- InP/InGaAs Diode, IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 2, FEBRUARY 2011

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Proof of memcapacitance in memristors 15 Jie Sun, Erik Lind, Ivan Maximov, and H. Q. Xu, Memristive and Memcapacitive Characteristicsof a Au/Ti–HfO2- InP/InGaAs Diode, IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 2, FEBRUARY 2011

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Behavioral Model of Memcapacitance ε permittivity of the sandwiched material A device cross section area A f the effective area of the filaments d max the gap length without filaments d f the gap thickness between filaments and the next electrode X(t) X max X min 16

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Proposed memristor model 17

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Conclusions Developing new memristance model is not only simple as behavior models, but it also considered to be physical model using some fitting parameters. Forcing memristance model to work within boundary conditions by choosing new window function which also satisfies logarithmic fashion of drift velocity with junction current. Including behavioral modeling of junction memcapacitance to model real memristor device. 18

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