1. XEIA3 April 2015 Lukas Hladik Application specialist Tomáš Hrnčíř R&D Physics

2. TESCAN Product line EasyProbe Thermo emission SEMs Field emission SEMs Focused Ion beam SEMs XEIA3 Analytical Performance High Resolution

3. Examples of FERA applications 25 µm 100 µm 10 µm 20 µm2 µm 100 µm 20 µm

4. Differences between FERA and XEIA Imaging resolution – low energy performance Working distance Maximum field of view / minimum magnification Observation of the milling process XEIA/FERA from outside FERA SEM objective XEIA SEM objective

5. Comparison of the imaging resolution TESCAN FERA TESCAN XEIA Optimum resolution0.9 nm @ 30 keV 4.0 nm @ 1 keV 2.0 nm @ 1 keV* 0.8 nm @ 30 keV 1.8 nm @ 1 keV 1.4 nm @ 1 keV* Resolution at FIB-SEM intersection 1.5 nm @ 30 keV 4.5 nm @ 1 keV 1.0 nm @ 30 keV 2.5 nm @ 1 keV 1.8 nm @ 1 keV * beam deceleration mode

6. SE Imaging resolution at beam energy 1 keV XEIA RESOLUTION SPECIFICATON 1.0 nm @ 15 keV 1.8 nm @ 1 keV 2.5 nm @ 0.5 keV Beam Deceleration Mode 1.4 nm @ 1 keV 2.2 nm @ 0.2 keV STEM 0.8 nm @ 30 keV Conventional optics of FERA Immersion optics of XEIA 500 nm

7. XEIA BSE Imaging at beam energy 1 keV Retractable BSE - affected by the redeposited material In-beam BSE - not affected by the redeposited material BSE image at 1 keVIn-beam BSE image at 1 keV 500 nm200 nm

8. An example – XEIA analysis of solder bumps Overview imaged at 5 keV with In- beam BSE detector High magnification details imaged at 2 keV with In-beam BSE detector 20 µm 2 µm Plasma FIB: Cross section area X= 120 µm / Y= 40 µm / Z= 100 µm Etch time: 5 min at 1 µA Polishing: 10 min at 100 nA (rocking stage) Total time: 15 min

9. An example – XEIA analysis of IC device Overview imaged at 2 keV with In- beam SE detector High magnification details imaged at 2 keV with In-beam SE + In- beam BSE detector 2 µm 500 nm Plasma FIB: Cross section area X= 120 µm / Y= 40 µm / Z= 100 µm Etch time: 12 min at 30 nA Polishing: 50 min down to current 100 pA

10. Difference in the working distance FIB SEM InstrumentTESCAN FERA TESCAN XEIA FEI Helios PFIB WD [mm]954 Image source – demo report for ST Agrate Increasing resolution versus decreasing versatility 500 µm

11. Maximum field of view FIB-SEM intersection: FERA (WD = 9 mm)6 mm XEIA (WD = 5 mm)4.3 mm (non-immersion mode), 220 µm (immersion mode) FEI Helios PFIB (WD = 4 mm)120 µm (immersion mode) 1 mm 2 mm

12. Comparison of the imaging resolution FERA Simultaneous observation by using BSE detectors Discontinuous observation by using other detectors XEIADiscontinuous observation by using the selected detector (immersion SEM field deflects FIB) FIB observer screenshot 1 µm

13. TEM lamella by Plasma FIB Extremely fast trench milling and lift-out due to Plasma FIB high current 50x34x40 µm 3 lamella in 20 minutes on the grid Polishing and thinning takes ± same time like on Ga FIB (1 hour in this case) Final polishing 86 pA @ 10 kV, 30 minutes Final thickness ~100 nm TEM trench milling Lift-out Polishing

14. TEM lamella by Plasma FIB Rocking stage is essential tool for curtaining effect removal on lamella while keeping tappering angle corrected (not possible without multiple tilt stage) => ONLY TESCAN! The amorphous layer thickness on Si for Xe beam at 30 kV is 14 nm (paralell polishing). Tilts: Y: - 7°, X: - 3° and + 3°Tilts: Y: + 7°, X: - 3° and + 3° 200 nm 20 µm 10 µm 5 µm Prepared by Olivier SALORD, Orsay Physics.

15. Delayering 5 µm 10 µm Process parameters: Xe + ion beam at 30 kV and 5 nA, delayered area 25x25 µm 2, the beam step size 50 nm, dwell time 1 µs and H 2 O vapors delivered from the Gas Injection System (GIS). Endpoint detection based on FIB-SE signal

16. TESCAN ORSAY HOLDING, a.s. Libusina trida 21 623 00 Brno Czech Republic, Europe www.tescan-orsay.eu Contact: E-mail: sales@tescan.cz ; marketing@tescan.czsales@tescan.czmarketing@tescan.cz Tel.: +420 530 353 411 Thank you for your attention!