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Tests on Sintef/Standford IZM (Nov09) and AMS (May10) 17 Dec 2009 Alessandro Rovani, Claudia Gemme, Gianluca Alimonti, Nanni Darbo INFN Genova/Milano 17.

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Presentation on theme: "Tests on Sintef/Standford IZM (Nov09) and AMS (May10) 17 Dec 2009 Alessandro Rovani, Claudia Gemme, Gianluca Alimonti, Nanni Darbo INFN Genova/Milano 17."— Presentation transcript:

1 Tests on Sintef/Standford IZM (Nov09) and AMS (May10) 17 Dec 2009 Alessandro Rovani, Claudia Gemme, Gianluca Alimonti, Nanni Darbo INFN Genova/Milano 17 devices IZM bumped received on Nov 16. FE electronic wafer AGD525X 8 devices AMS bumped received in May 2010. FE electronic wafer S789IUX

2 Sintef @ Selex Two Sintef wafers of the same batch bump-bonded last year at IZM have been bump-bonded at Selex –ATLAS FE-I3 and CMS assemblies flip-chipped –Dicing sensors was troublesome: dies detached from sticky tape used in the process. Diamond saw uses a “water” process during dicing. Selex claims they never had such problem in the past (~thousands of sensors handled for ATLAS Pixel) –Cut edge is very irregular from support wafer side, clean (~150µm from active edge) on bump side (see photos) –4+4 assemblies flipped sent to Genova this week: 5 put on single chip board and tested.

3 Wafer 1: B2-6 Received assemblies from Selex

4 Wafer 2: B4 Received assemblies from Selex

5 Diced assembly 150 µm

6 Bump side

7 Compare bump/back side Bump-side – Magnification = x200 Back-side – Magnification = x200 Left side Right side Front side does not show dicing damage. Is only support wafer damaged? Or impacts the sensor?

8 Sensor Wafer FEI3SensorLV (i_Avdd/i_DvDD)I_HV@20V (uA)Noise @ 20V (e) B2-161207197 6/12 ->68/5119 (no effect when blowing) NOT DONE (1V) B2-1612072100 6/11-> 69/1510.45 ->0.36 (FAN)180 B2-1601081102 6/11-> 75/1554.59-> 4.4 (FAN)250 B2-1601082106 6/11 -> 66/15019.31 (no effect when blowing) NOT DONE (1V) B2-1602081107 6/11->66/14617,6NOT DONE (2V) B2-1602082108 6/11->70/1432.6230 eGE B2-1603081111 6/11->66/15020NOT DONE (2V) B50308295 177/21 -> 214/5310.9 ->10.7 (FAN)Good dig, bad analog B50408196 214/24-> 270/920.40 -> 0.29 (FAN)Good dig, bad analogBonn B50408297 213/27->285/149Isteresi ( 1-7;3 -16)Good dig, bad analog B50508198 6/12 -> 76/15111.58 -> 11.54 (FAN)400 eBonn B50508299 6/11-> 71/1466300 e but col 15,16,17 bad B507081103 282/35->320/1514.1Good dig, bad analog B508081108 LV in short 0.40Not possible B509081109 5/11 -> 66/1480.66 -> 0.58 (FAN)400 e B510081110 216/20->285/1501.7Good dig, bad analog B510082115 6/11 -> 68/1480.71-> 0.62 (FAN)250 but xtalkGE SINTEF/IZM

9 General comments on IZM Almost all devices have high current on HV. As a 1MOhm resistance is between the PS and the DUT, a significant voltage reduction is expected in case of high current on the device. Some devices have unusually high LV currents (main on Analog supply): they work digitally but analog injection is bad. We have observed IV worsening in time after some handling or testing (difficult to track). We have also observed devices initially becoming bad in LV current consumption.. Never observed an improvement in time (also drying has no effect). Some devices work fine, even with high leakage current. However noise is relatively high and we just could tune one device at relatively high threshold.

10 Sensor Wafer FEI3SensorLV (i_Avdd/i_DvDD)I_HV@20V (uA)Noise @ 20V (e) B2-60701299 Not loaded B2-6080119779/13020 B2-604021109205/5018Analog inj bad B2-60502196Not loaded B-406022104Not loaded B-40702110271/5320Analog inj bad B-4070229869/13020 B-40802210175/12810450 SINTEF/AMS All devices have high current on HV. As a 1MOhm resistance is between the PS and the DUT, a significant voltage reduction is expected in case of high current on the device. Some devices have unusually high LV currents (main on Analog supply): they work digitally but analog injection is bad.


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