1. Introduction to BJT Amplifier Bipolar Junction Transistor (Review)

2. n-type & p-type semiconductors n-type: - to increase the no. of conduction-band electrons in intrinsic silicon (such as As, P, Bi, Sb) - majority carrier: electrons p-type: - to increase the no. of holes in intrinsic silicon (such as B, In, Ga) - majority carrier: holes

3. What is pn junction? Still remember this? What’s the different between these two figures? Which one is forward-biased and reverse-biased?

4. Remember these symbols? Still remember about BJT? Which one is NPN, PNP? What is C,B,E…?

5. BJT Current The emitter current ( i E ) is the sum of the collector current (i C ) and the base current (i B ) i B << i E and i C OTHER PRAMETERS & EQUATIONS?

6. BJT Basic structure and schematic symbol npn type pnp type approximate equivalents transistor symbols

7. Refresh… Common-emitter current gain, β Range: 50 < β < 300 Common-base current gain, α Range: always slightly less than 1 The current relationship between these 2 parameters are as follows:

8. Refresh... BJT as amplifying device B-E junction is forward-biased B-C junction is reverse-biased

9. Biasing of BJT Remember…! for normal operation  emitter-base junction is always forward- biased AND  collector-base junction is always reverse- biased

10. Common-Emitter Circuit (a)with an npn transistor (b)with a pnp transistor (c)with a pnp transistor biased with a positive voltage source

11. DC Analysis: Common-Emitter Circuit Transistor current-voltage characteristics of the common- emitter circuit

12. DC Analysis: Common-Emitter Circuit Common-emitter circuit with an npn transistor Common-emitter dc equivalent circuit, with piecewise linear parameters

13. DC Analysis: Common-Emitter Circuit Look for calculation examples in Neamen (Chapter 5), Example 5.3 & 5.4 Usually V BE (on) = 0.7 V Common-emitter dc equivalent circuit

14. DC Analysis: Load Line & Modes of Operation Base-emitter junction characteristics and the input load line Base on Figure A, using KVL around B-E loop: Figure A

15. Base on Figure A, 2 end points of the load line are found by setting I C = 0 So, V CE = V CC = 10 V When V CE = 0, I C = V CC /R C = 5 mA I BQ is the value from the previous slide = 15 µA So, I CQ = βI BQ If β = 200, I CQ = 3000 µA = 3 mA So, V CEQ = 4 V DC Analysis: Load Line & Modes of Operation Common- emitter transistor characteristics and the collector-emitter load line

16. BJT as an Amplifier Amplification of a small ac voltage by placing the ac signal source in the base circuit V in is superimposed on the DC bias voltage V BB by connecting them in series with base resistor R B : Small changes in the base current circuit causes large changes in collector current circuit

17. BJT as an Amplifier (cont’) (a)A bipolar inverter circuit to be used as a time-varying amplifier (b) The voltage transfer characteristic

18. Self- Reading Textbook: Donald A. Neamen, ‘MICROELECTRONICS Circuit Analysis & Design’,3 rd Edition’, McGraw Hill International Edition, 2007 Chapter 5:The Bipolar Junction Transistor Page: 287-296, 303-309.